一种改进的运动补偿三维小波视频编码方法

Choi等[1]提出的运动补偿三维子带编码方法是一种具有代表性的高效小波视频编码方法,其编码效率优于国际标准MPEG-2.但是该方法的运算复杂度高,编码时也没有充分利用小波图像的特点.为此,本文对该方法的两项关键技术进行了改进:采用像素域降采样运动估计技术以降低运算复杂度,采用改进的集分裂分层树(Set Partitioning in Hierarchical Trees,SPIHT)方法对三维时/空子带进行更高效的编码.实验结果表明,与原有的算法相比,本文的工作不仅降低了运算复杂度,也进一步提高了编码效率.     

基于模糊度测度和改进遗传算法的图像分割

为了利用模糊集理论进行图像分割,本文提出了一种模糊度测度函数,它衡量了背景模糊集和某一个二值图像的相似性:模糊度越小,这种相似程度越大;并且对模糊度的计算只需要进行简单的比较运算和加法运算,便于硬件实现。本文利用遗传算法求取最佳阈值,针对遗传算法的某些不足之处.我们利用精英策略和模拟退火的思想,对其做了一些修正。实验结果表明:相对于Shannon熵方法和模糊熵方法,本文方法取得了较好的分割结果,并且具有较强的抗噪声能力。     

One-, two-, and three-photon pumped lasing in a novel liquid dye salt system

We report the observation of one-, two-, and three-photon pumped lasing in the same medium, a novel liquid dye salt system when excited by pulsed 0.532-, 1.06-, and /spl sim/1.49-/spl mu/m coherent radiation pulses, respectively. Since the gain medium is a liquid and not a solution, it contains a significantly higher effective dye concentration and, therefore, is highly suitable for multiphoton pumped lasing and optical power limiting applications. The lasing spectra, temporal waveforms, near- and far-field intensity distributions, and output/input efficiency were measured under the conditions of one-, two-, and three-photon pump configurations.     

Effects of Background Plasma on Free Electron Laser with Planar Wiggler

Dispersion equation of planar-wiggler free-electron laser with background plasma is derived using linear fluid theory. The characteristic of this plasma FEL is analyzed in detail. It is shown that reasonable background plasma density tends to improve FEL growth rate. We also find there exits a critical plasma density for FEL operating. When the background plasma density is higher than critical density, the FEL can no longer be excited.     

A note on an SOR-like method for augmented systems

Golub et al. (2001, BIT, 41, 71–85) gave a generalizedsuccessive over-relaxation method for the augmented systems.In this paper, the connection between the SOR-like method andthe preconditioned conjugate gradient (PCG) method for the augmentedsystems is investigated. It is shown that the PCG method isat least as accurate (fast) as the SOR-like method. Numericalexamples demonstrate that the PCG method is much faster thanthe SOR-like method.     

New Synthetic Method for Industrial Manufacture of Glutaric Dialdehyde

A new synthetic method for the manufacture of glutaric dialdehyde is investigated. Glutaric dialdehyde was prepared by the addition-hydrolysis reaction of benzimidazolium salt with saturated dihalide as the di-Grignard reagent. The yield of glutaric dialdehyde by this method can reach 73%. Both infrared spectra and melting point of the compound were consistent with those reported earlier. Translated from Journal of Northwest University (Natural Science Edition), 2005, 35(2) (in Chinese)     

带有边集限制的最均匀支撑树问题

本在无向网络中，建立了带有边集限制的最均匀支撑树问题的网络模型．中首先解决最均匀支撑树问题，并给出求无向网络中最均匀支撑树的多项式时间算法；然后，给出了求无向网络中带有边集限制的最小树多项式时间算法；最后，在已解决的两个问题的基础上解决了带有边集限制的最均匀支撑树问题．     

Self-aligning planarization and passivation for integration applications in III-V semiconductor devices

This work reports an easy planarization and passivation approach for the integration of III-V semiconductor devices. Vertically etched III-V semiconductor devices typically require sidewall passivation to suppress leakage currents and planarization of the passivation material for metal interconnection and device integration. It is, however, challenging to planarize all devices at once. This technique offers wafer-scale passivation and planarization that is automatically leveled to the device top in the 1-3-/spl mu/m vicinity surrounding each device. In this method, a dielectric hard mask is used to define the device area. An undercut structure is intentionally created below the hard mask, which is retained during the subsequent polymer spinning and anisotropic polymer etch back. The spin-on polymer that fills in the undercut seals the sidewalls for all the devices across the wafer. After the polymer etch back, the dielectric mask is removed leaving the polymer surrounding each device level with its device top to atomic scale flatness. This integration method is robust and is insensitive to spin-on polymer thickness, polymer etch nonuniformity, and device height difference. It prevents the polymer under the hard mask from etch-induced damage and creates a polymer-free device surface for metallization upon removal of the dielectric mask. We applied this integration technique in fabricating an InP-based photonic switch that consists of a mesa photodiode and a quantum-well waveguide modulator using benzocyclobutene (BCB) polymer. We demonstrated functional integrated photonic switches with high process yield of >90%, high breakdown voltage of >25 V, and low ohmic contact resistance of /spl sim/10 /spl Omega/. To the best of our knowledge, such an integration of a surface-normal photodiode and a lumped electroabsorption modulator with the use of BCB is the first to be implemented on a single substrate.     

Investigation of Infrared Photonic Crystal Slab with Defect Waveguides

This paper deals with the two dimensional (2-D) infrared photonic crystal slab with an air-bridge structure featuring defect waveguides in which the optical propagation properties were obtained by measurements of transmission spectra. 3-D finite-difference time-domain (FDTD) simulations have revealed the appearance of four defect propagation modes for the band structure and transmission spectra in the air-bridge slab. These defect modes were experimentally identified in the measured transmission spectra.     

First-principle study of ferroelectricity in PbTiO3/SrTiO3 superlattices

We performed the first-principles calculation to investigate the electronic structure and polarization behaviors in PbTiO₃/SrTiO₃ (PST) superlattices. The DOS (density of state) profiles show that there are strong hybridizations of atom Ti–O and Pb–O which play very important roles on ferroelectricity of the PbTiO₃/SrTiO₃ superlattices. Comparing to the corresponding paraelectric phase, we find the electrons of the PT (PbTiO₃) layers occupy lower energy states and electrons of the ST (SrTiO₃) layer occupy higher energy states. It is shown that the polarizations of the superlattices decrease with proportion of SrTiO₃ increasing. The constant polarization of local layer indicates that PST superlattices with small modulation lengthen can be approximately considered as a single ferroelectric material. Furthermore, according to electrostatic model, we find that directions of internal electric fields in PT and ST layers are opposite. In PST superlattices, internal electric field in PT layer leads to the loss of polarization of this layer, but the polarization of ST layer is induced by internal electric field of this layer. Compared to the value of the polarization in bulk PbTiO₃, polarization of PST is smaller.