纳米电子器件及其集成

对基于Top-Down加工技术的纳米电子器件如：单电子器件、共振器件、分子电子器件等的研究现状、面临的主要挑战等进行了讨论. 采用CMOS兼容的工艺成功地研制出单电子器件，观察到明显的库仑阻塞效应；在半绝缘GaAs衬底上制作了AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs双势垒共振隧穿二极管,采用环型集电极和薄势垒结构研制的共振隧穿器件，在室温下测得其峰谷电流比高达13.98，峰电流密度大于89kA/cm2；概述了交叉阵列的分子存储器的研究进展.     

GaN缓冲层对生长InN薄膜的影响

采用金属有机物化学气相沉积(MOCVD)方法生长六方相InN薄膜，利用氮化镓(GaN)缓冲层技术制备了高质量薄膜，得到了其能带带隙0.7eV附近对应的光致发光光谱(PL). 通过比较未采用缓冲层，同时采用低温和高温GaN缓冲层，以及低温GaN缓冲层结合高温退火三种生长过程，发现低温GaN缓冲层结合高温退火过程能够得到更优表面形貌和晶体质量的InN薄膜，同时表征了材料的电学性质和光学性质. 通过对InN薄膜生长模式的讨论，解释了薄膜表面形貌和晶体结构的差异.     

石英衬底上溅射制备纳米SiCN薄膜

利用射频溅射方法在石英玻璃上沉积了纳米结构硅碳氮(SiCN)薄膜. SiCN薄膜表面由平均直径约50nm的SiCN纳米颗粒组成，这些纳米颗粒的紧密分布构造了薄膜的致密表面. 纳米SiCN薄膜呈现出典型的半导体导电特征. 通过调整N2流量参数可以获得不同带隙的SiCN薄膜材料，这种带隙可调的纳米结构SiCN薄膜在未来的半导体光电器件应用领域会有广阔的应用前景.     

User Independent Paging Scheme for Mobile IP

Multi-step paging has been widely proposed in personal communications services (PCS) systems to reduce the signaling overheads. Similar ideas can be applied to Mobile IP to provide IP paging services. However, current proposed multi-step paging schemes are user dependent under which the partition of paging areas and the selection of paging sequence are different for each user. The performance of a user dependent paging scheme for individual users may be affected by many factors. It is often difficult to achieve perfect performance for each user. In addition, when multiple users are paged at the same time, user dependent paging schemes may consume significant system resources. This paper introduces a user independent paging scheme where the paging criterion is not based on individual user information. The goal of user independent paging is to provide satisfactory overall performance of the whole system, when personalized optimal performance for each user is hard to obtain. The user independent paging scheme is proposed for IP mobility for its easy implementation and convenient combination with paging request aggregation. The paging criterion adopted is the mobility rate of each subnet determined by the aggregated movements of all mobile users. In order to implement the proposed scheme, a concept of “semi-idle state” is introduced and the detailed solution for obtaining mobility rate is presented. Analytical results show that when paging one user at a time, the performance of the proposed user independent paging scheme is comparable to that of the paging schemes based on perfect knowledge of user movement statistics. When paging multiple users simultaneously and when the knowledge on individual user behavior is not perfectly accurate, the proposed scheme has remarkable advantages in terms of reducing the overall paging cost. Jiang Xie received her B.E. degree from Tsinghua University, Beijing, China, in 1997, M.Phil. degree from Hong Kong University of Science and Technology in 1999, and M.S. and Ph.D. degrees from Georgia Institute of Technology in 2002 and 2004, respectively, all in electrical engineering. She is currently an assistant professor with the Department of Electrical and Computer Engineering at the University of North Carolina-Charlotte. Her current research interests include resource and mobility management of wireless networks,QoS provisioning, and next-generation Internet. She is a member of IEEE and ACM.     

城域网的光缆线路设计

根据城域网的定位及作用，对城域光网络的结构、组网原则和光纤选用等问题进行了讨论。     

ZnO单晶薄膜光电响应特性

对采用MOCVD方法沉积的ZnO单晶薄膜的欧姆接触特性、光电特性进行了研究,并对比研究了射频溅射沉积SiO2抗反射膜对ZnO薄膜I-V、光电特性的影响.实验结果表明,非合金Al/ZnO金属体系与n型ZnO形成了良好的欧姆接触,溅射沉积SiO2在ZnO表面引入了载流子陷阱,影响I-V特性,延长了光响应下降时间.ZnO单晶薄膜光电导也具有时间退化现象.     

一种大数模幂的快速实现方法

在密码算法中经常会遇到大整数的乘法。论文提出了对传统BR算法的改进方法,能明显提高大数模幂乘运算的效率,从而大大缩短加解密的时间,提高加解密的效率。     

高斯激光辐照下膜基系统的温度场和应力场的瞬态分析

本文根据加载激光的工艺参数以及薄膜、基体的材料特性,建立了薄膜与基体的有限元模型,对高斯激光在加载在薄膜表面后的温度场进行有限元模拟,获得膜基系统中温度随时间的变化关系以及薄膜界面结合处的温升规律。并在此基础上根据薄膜和基体的热膨胀性能,进行薄膜和基体的应力场模拟,获得了膜基系统的应力场随时间的变化关系。模拟结果表明：在激光加载过程中,薄膜和基体中的温度场随着时间增加,由于热传导系数的差异在薄膜和基体之间产生温差。在膜基系统中产生的应力场主要集中在薄膜内部,膜基界面结合处产生的应力较大会导致薄膜的脱粘。模拟结果定性地反映了薄膜和基体中温度和热应力的变化规律,为分析激光划痕法的作用过程提供了一定的理论依据,对研究膜基系统失效进程具有重要意义。     

Synthesis and biological evaluation of the geometric farnesylated analogues of the a-factor mating peptide of Saccharomyces cerevisiae

The a-factor of Saccharomyces cerevisiae is a dodecapeptide pheromone (YIIKGVFWDPAC(Farnesyl)-OCH(3), 1), in which post-translational modification with a farnesyl isoprenoid and carboxymethyl group is required for full biological activity. This peptide has been used as a model system to explore the biological function of the farnesylcysteine moiety, which is found on and required for the biological activity of many key mammalian proteins. The objective of this particular study was the determination of the biological effect of double bond isomerization of the natural E, E-farnesyl moiety on the biological activity of the a-factor. A unified, stereoselective synthetic route to the three geometric isomers of E,E-farnesol (12, 13, and 14) has been developed. The key feature of this synthesis is the ability to control the stereochemistry of triflation of the beta-ketoester 22 to give either 23 or 25. The three farnesol isomers were converted to the corresponding isomeric a-factors (9, 10 and 11) via a modified version of a previously utilized synthetic route. Biological evaluation of these peptides indicates that, surprisingly, all three possess nearly equivalent activity to the natural a-factor bearing the E,E-farnesyl moiety.     

Surface etching of 6H-SiC (0001) and surface morphology of the subsequently grown GaN via MOCVD

The correlation between surface morphological properties of the GaN epilayers and the surface conditions of 6H-SiC (0001) substrates etched in H₂, C₂H₄/H₂, and HCl/H₂ was studied. Etching 6H-SiC in H₂ produced a high quality surface with steps and terraces, while etching in HCl/H₂ produced either a rough surface with many pits and hillocks or a smooth surface similar to that etched in H₂, depending on the HCl concentration and temperature. The GaN epilayers were subsequently deposited on these etched substrates using either a low temperature GaN or a high temperature AlN buffer layer via MOCVD. The substrate surface defects increased the density and size of the “giant” pinholes (2–4 μm) on GaN epilayers grown on a LT-GaN buffer layer. Small pinholes (<100 nm) were frequently observed on the samples grown on a HT-AlN buffer layer, and their density decreased with the improved surface quality. The non-uniform GaN nucleation caused by substrate surface defects and the slow growth rate of planes of the islands were responsible for the formation of “giant” pinholes, while the small pinholes were believed to be caused by misfit dislocations.