Vibration thresholds for fretting corrosion in electrical connectors

Single frequency vibration tests were used to induce fretting corrosion in tin alloy plated contacts. The samples used in this study were connectors consisting of 25 pairs of mated pin and socket contacts. Experimental results for a variety of vibration levels, frequencies, and wiring tie-off lengths are presented. The experiments consisted of running a series of vibration tests at each frequency where the excitation level was stepped through a range of g-levels. During each test run contact resistance was monitored as a performance characteristic. The results exhibit threshold behavior at each frequency for the onset of fretting degradation. Typically a plateau region was observed where similar g-levels produced similar fretting rates. It was also found that outside the plateau region the g-levels varied according to the dynamic behavior of the mechanical system. In addition, a transfer matrix model was used to analyze these results. An empirical fit of the data correlated well with the model when damping was used. This analysis revealed the importance of the bending moment induced at the contact interface as a result of excitation levels and tie-off configurations. Consequently, it is concluded that dynamic response of the mechanical system under various g-levels and tie off configurations can greatly impact the performance of a connector system subjected to vibration stresses.     

离子束混合工艺对材料抗蚀性能的影响

本文介绍了离子束混合工艺方法。与直接注入相比较,离子束混合所使用的设备造价低1/4—1/2,而生产效率可提高1—2个数量级,因而使生产成本大幅度降低,这无疑对离子束工艺的实际应用将产生巨大的促进作用。 通过对轴承材料(GCr15和Cr4Mo4V)经Cr、N、Ta不同元素的混合处理后,在0.5M H_2SO_4和0.1M NaCl的缓冲溶液中的阳极极化曲线表明经混合处理后的两种材料试样,其抗蚀能力和抗点蚀能力均大大提高,这与直接注入的试样效果是一致的。 通过俄歇谱仪和透射电镜的分析结果表明混合是成功的,且在一定的条件下,形成非晶组织。 本文的结论是,无论是离子的直接注入还是离子束混合,对提高轴承材料的抗腐蚀性能都是有效的方法,特别是离子束混合技术具有更大的应用前景。     

First-principles study of indium on silicon (1 0 0)—the structure, defects and interdiffusion

The atomic structures of indium (In) on silicon (Si) (1 0 0)-(2 × 1) surface are investigated by the local density approximation using first-principles pseudopotentials. Total energy optimizations show that the energetically favored structure is the parallel ad-dimer model. The adsorption energy of In on ideal Si(1 0 0)-(1 × 1) surface is significantly higher than that on reconstructed Si(1 0 0)-(2 × 1) surface, suggesting that In adsorption does not break the Si-Si dimer bond of the substrate. When Si surface contains single dimer vacancy defects, In chain will be interrupted, leading to disconnected In nanowires. Displacive adsorption of In on Si(1 0 0) is also considered, and the calculation suggests that interdiffusion of In into Si substrate will not be favorable under equilibrium conditions.     

Synthesis and characterization of white‐light‐emitting polyfluorenes containing orange phosphorescent moieties in the side chain

Two orange phosphorescent iridium complex monomers, 9‐hexyl‐9‐(iridium (III)bis(2‐(4′‐fluorophenyl)‐4‐phenylquinoline‐N,C^2′)(tetradecanedionate‐11,13))‐2,7‐dibromofluorene (Br‐PIr) and 9‐hexyl‐9‐(iridium(III)bis(2‐(4′‐fluorophenyl)‐4‐methylquinoline‐N,C^2′)(tetradecanedionate‐11,13))‐2,7‐dibromofluorene (Br‐MIr), were successfully synthesized. The Suzuki polycondensation of 2,7‐bis(trimethylene boronate)‐9,9‐dioctylfluorene with 2,7‐dibromo‐9,9‐dioctylfluorene and Br‐PIr or Br‐MIr afforded two series of copolymers, PIrPFs and MIrPFs, in good yields, in which the concentrations of the phosphorescent moieties were kept small (0.5–3 mol % feed ratio) to realize incomplete energy transfer. The photoluminescence (PL) of the copolymers showed blue‐ and orange‐emission peaks. A white‐light‐emitting diode with a configuration of indium tin oxide/poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)/PIr05PF (0.5 mol % feed ratio of Br‐PIr)/Ca/Al exhibited a luminous efficiency of 4.49 cd/A and a power efficiency of 2.35 lm/W at 6.0 V with Commission Internationale de L'Eclairage (CIE) coordinates of (0.46, 0.33). The CIE coordinates were improved to (0.34, 0.33) when copolymer MIr10PF (1.0 mol % feed ratio of Br‐MIr) was employed as the white‐emissive layer. The strong orange emission in the electroluminescence spectra in comparison with PL for these kinds of polymers was attributed to the additional contribution of charge trapping in the phosphorescent dopants. © 2007 Wiley Periodicals, Inc. JPolym Sci Part A: Polym Chem 45: 1746–1757, 2007     

化学束外延

本文介绍了化学束外延(CBE)的发明和发展,论述了CBE的原理和设备。文中还介绍了最近提出的一种生长机理。     

用基函数神经网络实现多阈值图象分割

本文介绍了一种用基函数神经网络实现多阈值图象分割的新方法。它从函数逼近的角度研究基于灰度直方图的多阈值分割问题，提出了一种模糊反向传播学习算法，采用该算法的高斯基函数网络能够准确检测直方图中包含的子区域和它们的分布函数，而且速度很快。实验表明本文的方法在实际图象分割中是有效的。     

A high-current and high-temperature 6H-SiC thyristor

A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm² have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300°C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities     

字节全加器及其在无线电测控系统中的应用

对全加器概念进行了推广，并在此基础上给出了使用字节全加器网络的无线电抗干扰算法。通过在实际的无线电测控系统中的应用，结果表明该算法具有良好的无线电抗干扰效果。     

半绝缘砷化镓中碳含量对热稳定性的影响

本文报导了LEC法半绝缘砷化镓单晶中含碳量对SI-GaAs热稳定性的影响。在800℃以上退火,发现当晶体中C含量大于1.5×10~(16)cm~(-3)时,SI-GaAs的热稳定性变差;而C含量小于5×10~(15)cm~(-3)时,通常表现出良好的热稳定性。