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81.
Buttari D. Chini A. Meneghesso G. Zanoni E. Moran B. Heikman S. Zhang N.Q. Shen L. Coffie R. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2002,23(2):76-78
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs 相似文献
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Incomplete LU factorization preconditioning techniques often have difficulty on indefinite sparse matrices. We present hybrid reordering strategies to deal with such matrices, which include new diagonal reorderings that are in conjunction with a symmetric nondecreasing degree algorithm. We first use the diagonal reorderings to efficiently search for entries of single element rows and columns and/or the maximum absolute value to be placed on the diagonal for computing a nonsymmetric permutation. To augment the effectiveness of the diagonal reorderings, a nondecreasing degree algorithm is applied to reduce the amount of fill-in during the ILU factorization. With the reordered matrices, we achieve a noticeable improvement in enhancing the stability of incomplete LU factorizations. Consequently, we reduce the convergence cost of the preconditioned Krylov subspace methods on solving the reordered indefinite matrices. 相似文献
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色散及光信噪比对DWDM组网的影响 总被引:2,自引:0,他引:2
介绍了色散受限距离及光信噪比对DWDM组网的影响,其中提出了网络设计时的应考虑的问题和减少影响的方法。 相似文献
86.
Fractional factorial split-plot (FFSP) designs have an important value of investigation for their special structures. There are two types of factors in an FFSP design: the whole-plot (WP) factors and sub-plot (SP) factors, which can form three types of two-factor interactions: WP2fi, WS2fi and SP2fi. This paper considers FFSP designs with resolution III or IV under the clear effects criterion. It derives the upper and lower bounds on the maximum numbers of clear WP2fis and WS2fis for FFSP designs, and gives some methods for constructing the desired FFSP designs. It further examines the performance of the construction methods. 相似文献
87.
Chong-Guang Cao Zhong-Peng Yang Xian Zhang 《Journal of Applied Mathematics and Computing》2002,10(1-2):101-109
We extend two inequalities involving Hadamard products of positive definite Hermitian matrices to positive semi-definite Hermitian matrices. Simultaneously, we also show the sufficient conditions for equalities to hold. Moreover, some other matrix inequalities are also obtained. Our results and methods are different from those which are obtained by S. Liu in [J. Math. Anal. Appl. 243:458–463(2000)] and B.-Y. Wang et al. in [Lin. Alg. Appl. 302–303: 163–172(1999)]. 相似文献
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Let G=(V(G),E(G)) be a graph. A (n,G, λ)‐GD is a partition of the edges of λKn into subgraphs (G‐blocks), each of which is isomorphic to G. The (n,G,λ)‐GD is named as graph design for G or G‐decomposition. The large set of (n,G,λ)‐GD is denoted by (n,G,λ)‐LGD. In this work, we obtain the existence spectrum of (n,P3,λ)‐LGD. © 2002 Wiley Periodicals, Inc. J Combin Designs 10: 151–159, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/jcd.10008 相似文献
90.