受激喇曼散射在掺铒光纤放大器中的影响

本文在分析了均匀掺杂分布式光纤放大器（d－EDFA）的基础上，提出了沿传输方向掺杂浓度单调下降（单变），和降升结合（两变）的两种渐变型分布式光纤放大器，并用传输方程研究了透明传输和最佳掺杂浓度下，受激喇曼散射对均匀、单变和两变型三种d－EDFA的各种特性的影响．     

Aliasing Effects and Sampling Theorems of Spherical Random Fields when Sampled on a Finite Grid

Aliasing effects are investigated for spherical random fields sampled on a finite grid. Using the spherical harmonics expansion, it is shown that for a band-limited spherical random field its trend and spectrum can be uniquely reconstructed from the sampled field if the sampling points are judiciously designed. Analytical expressions are also obtained for aliasing errors in the trend and the spectrum when the field is not band-limited.     

Patterned uniformly orientated silicon nanocrystallite films and efficient field emission characteristics

Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/μm at current density of 0.1 μA/cm² was obtained. The emission current density from the SiNC films reached 1 mA/cm² under a bias field of about 11 V/μm. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays.     

谱约束下对称正交对称矩阵束的最佳逼近

讨论了对称正交对称矩阵的广义逆特征值问题，得到了通解表达式和最佳解的表达式。     

位错芯重构缺陷对于Si中位错运动的影响

为了研究晶格常数不匹配的异质结SiGe/Si生长过程中低温缓冲层内缺陷对位错运动的影响,使用位错偶极子模型在Si晶体内建立了一对30°部分位错,和导致30°部分位错运动的弯结结构,以及位错芯重构缺陷(RD)与弯结组合而生成的弯结-RD结构.通过分子动力学模拟,使用Parrnello-Rahmman方法施加剪应力促使位错运动,得到了左右弯结-RD结构在迁移过程中的8种稳定构型,并且使用NEB方法和紧束缚势计算了纯弯结和弯结-RD迁移过程中势垒高度,发现弯结-RD的迁移能力要高于纯弯结结构.从模拟结果推断出,低温层生长技术中的Si低温缓冲层由于低温限制了重构缺陷的运动,减少其相遇发生湮灭的概率,从而使得更多的弯结能够与重构缺陷结合生成弯结-RD结构来提高30°部分位错的运动能力,由此释放异质结结构失配应力所需的位错密度会随之减小.     

一种用于开关电源启动电路的新型自偏置高压器件结构

设计了一种新的用于离线式集成开关电源启动电路的自偏置高压器件结构.对一个RESURF高压(功率)器件的此种自偏置方法进行了原理分析和仿真模拟.采用该结构集成开关电源的启动电路可以节省芯片面积,降低电路功耗,易于控制且可提供较大的芯片内部电源电压.     

Application of asymptotic waveform evaluation to eigenmode expansion method for analysis of simultaneous switching noise in printed circuit boards (PCBs)

In this paper, the asymptotic waveform evaluation (AWE) technique is first applied to the conventional eigenmode expansion method for characterizing a power/ground (P/G) plane pair and analyzing the simultaneous switching noise on such plane pairs for printed circuit boards or multichip modules. The application of AWE avoids a large number of iterations in computing the impedance frequency response of a P/G plane pair structure and greatly reduces the computation time. Meanwhile, to obtain an accurate solution in an entire frequency range, we employ the complex frequency hopping technique which can help select multiple expansion points. In addition, the proposed approach can also be used to characterize the P/G plane pair structures with irregular shapes. Three examples demonstrate its high efficiency and good accuracy.     

Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO

Wet etch rates at 25°C for Zn_0.9Mg_0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min⁻¹ with HCl/H₂O (5×10⁻³−2×10⁻² M) and 120–300 nm · min⁻¹ with H₃PO₄/H₂O (5×10⁻³−2×10⁻² M). Both of these dilute mixtures exhibited diffusion-limited etching, with thermal activation energies of 2–3 kCal · mol⁻¹. By sharp contrast, the etch rates for ZnO also grown on sapphire by PLD were much slower in similar solutions, with rates of 1.2–50 nm · min⁻¹ in HCl/H₂O (0.01–1.2 M) and 12–54 nm · min⁻¹ in H₃PO₄/H₂O (0.02–0.15 M). The etching was reaction limited over the temperature range 25–75°C, with activation energies close to 6 kCal · mol⁻¹. The resulting selectivity of Zn_0.9Mg_0.1O over ZnO can be a high as ∼400 with HCl and ∼30 with H₃PO₄.     

Development of a low cost microwave mixer using a broad-band substrate integrated waveguide (SIW) coupler

A low cost single-balanced mixer is designed using a newly designed 90/spl deg/ substrate integrated waveguide (SIW) 3-dB coupler, which takes the advantages of low cost, low profile, and high performance. An X-band single-balanced SIW mixer is designed and fabricated with a standard printed circuit board process. Measured conversion loss of 6.8dB and the wide-band response from 8.5 to 12GHz are presented.     

IP电话的实现及其关键技术

IP电话在推出后短短十年的时间以其低价、高效、灵活的特点迅速发展起来。本文介绍了IP电话的基本结构，比较了IP电话与普通电话的优缺点，讨论了IP电话的相关协议及关键技术，在这些基础上进一步指出IP电话的发展趋势，相信IP将成为未来信息通信的主导技术。