A quadruple well, quadruple polysilicon BiCMOS process for fast 16Mb SRAM's

An advanced, high-performance, quadruple well, quadruple polysilicon BiCMOS technology has been developed for fast 16 Mb SRAM's. A split word-line bitcell architecture, using four levels of polysilicon and two self-aligned contacts, achieves a cell area of 8.61 μm² with conventional I-line lithography and 7.32 μm² with I-line plus phase-shift or with deep UV lithography. The process features PELOX isolation to provide a 1.0 μm active pitch, MOSFET transistors designed for a 0.80 μm gate poly pitch, a double polysilicon bipolar transistor with aggressively scaled parasitics, and a thin-film polysilicon transistor to enhance bitcell stability. A quadruple-well structure improves soft error rate (SER) and allows simultaneous optimization of MOSFET and bipolar performance     

N个振荡器相互注入锁定同步振荡系统

本文对Ｎ个振荡器相互注入锁定同步振荡系统提出了一种通用的分析方法。建立了该系统的完整非线性等效模型，导出了系统的状态方程。对于各种不同电路形式的振荡系统，只要将具体的电路参数代入，就可计算其输出功率，功率合成效率及工作频率等参数，从而使这类系统的计算机辅助分析和设计成为可能。     

羰基铁类随机混合吸波材料等效电磁参数的计算

本文为计及多重散射偶极子间的相互作用，引入参量εｈ和μｈ，导得一组公式。它不仅能计算铁氧体类也能计算羰基铁类的随机混合吸波材料的等效电磁参数，均与实验结果吻合良好。     

P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied     

Implicit deregistration in a PCS network

Registration/deregistration is required in a PCS network when a portable moves between registration areas. Several schemes were proposed to deregister a portable after it moves out of a registration area (RA). A simple scheme called implicit deregistration totally eliminates network traffic due to deregistration. However, this scheme may delete valid registration records. Thus, the size of a registration database must be sufficiently large to ensure low probability that a valid registration record is deleted. This paper describes an analytic model to determine the size k of the registration database for an RA in the implicit deregistration scheme. If the expected number of portables in an RA is N, then our study indicates that good performance can be achieved if k≃5N     

An improved prediction of series resistance in spiral inductormodeling with eddy-current effect

Based on an earlier study by Kuhn and Ibrahim (see IEEE J. Trans. Microwave Theory Tech., vol. 49, no. 1, p. 31-38, 2001) on current crowding, an improved expression incorporating the skin effect for the prediction of series resistance in spiral inductor modeling has been derived. A modified model for the spiral inductor, which accounts for the eddy-current effect, is thus proposed. Relatively good agreements between the measured data and the results generated from the model are obtained     

npn AlGaN/GaN HBT模型与特性分析

基于实验数据对GaN材料的少子寿命和碰撞电离率进行了建模,应用漂移-扩散传输模型开展了npnAlGaN/GaN异质结双极晶体管的特性研究,给出了器件导通电压、偏移电压和饱和电压的解析式.结果表明:实际器件导通电压、偏移电压及饱和电压较大的原因主要是高基区电阻和基区接触的非欧姆特性,为器件的工艺制造提供了理论指导.     

Bottlenecks and strategies of green mold compounds

The mold compound protects integrated circuit (IC) devices from the environmental attacks (e.g., moisture, contaminants) for its lifetime. Driven by market pressure, environmental regulations, the electronics industry is migrating to provide environmental friendly ("green") products and systems. Two major changes associated with this migration are elimination of lead and toxic halogens from the products. Thus, the halogen-free mold compound will be a part of the "green" IC package. The migration to lead-free electronics impacts the current nongreen IC packaging technology, cost and reliability of manufacturers. This article presents the technology challenges and development trend that manufacturers and end users are facing right now with the introduction of green mold compounds.     

Low RF noise and power loss for ion-implanted Si having an improved implantation process

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.