A new polysilicon CMOS self-aligned double-gate TFT technology

In this paper, a new polysilicon CMOS self-aligned double-gate thin-film transistor (SA-DG TFT) technology is proposed and experimentally demonstrated. The self-alignment between the top- and bottom-gate is realized by a backlight exposure technique. The structure has an ultrathin channel region (300 /spl Aring/) and a thick source/drain region. Experimental results show that this technology provides excellent current saturation due to a combination of the effective reduction in the drain field and the full depletion of the ultrathin channel. Moreover, for n-channel devices, the SA-DG TFT has a 4.2 times higher on-current (V/sub gs/=20V) as compared to the conventional single-gate TFT. Whereas for the p-channel devices, the SADG TFT has a 3.6 times higher on-current (V/sub gs/=-20V) compared to the conventional single-gate device.     

Electrochemical C-V Characteristics and Photoluminescence of a-C∶N Films

Amorphous carbon (a-C) films and amorphous carbon films incorporating with the nitrogen (a-C∶N) were deposited on silicon substrates in a radio-frequency driven plasma enhanced chemical vapour deposition system, while the surface electrical properties of films were investigated by electrochemical capacitance-voltage measurements. It was examined the effect of the interface defects on the properties and deduced that the conducting type of a-C∶N films was n-type. Subsequently, a comparative studies of a-C and a-C∶N films were performed by photoluminescence spectra depending on the temperature. With the decrease of the temperature, the main band with peak energy of 2.48 eV in the a-C∶N films was more intense compared with the other three bands caused by amorphous C in the a-C films.     

Least‐squares meshfree method for incompressible Navier–Stokes problems

A least‐squares meshfree method based on the first‐order velocity–pressure–vorticity formulation for two‐dimensional incompressible Navier–Stokes problem is presented. The convective term is linearized by successive substitution or Newton's method. The discretization of all governing equations is implemented by the least‐squares method. Equal‐order moving least‐squares approximation is employed with Gauss quadrature in the background cells. The boundary conditions are enforced by the penalty method. The matrix‐free element‐by‐element Jacobi preconditioned conjugate method is applied to solve the discretized linear systems. Cavity flow for steady Navier–Stokes problem and the flow over a square obstacle for time‐dependent Navier–Stokes problem are investigated for the presented least‐squares meshfree method. The effects of inaccurate integration on the accuracy of the solution are investigated. Copyright © 2004 John Wiley & Sons, Ltd.     

给定拓扑结构的网络的可靠性设计

本文首先讨论了网络链路堵概率的加权平均值，提出了网络分配的一般准则，并在考虑了网络链路生存链路概率的因素后，提出了更一般的网络链路堵塞概率的加权平均值，以此为基础，分别讨论了网络在给定点的费用条件下，使得网络可靠性最大的网络设计问题，以及在给定网络可靠性指标的前提下，使得网络费用最小的网络设计问题。     

OSI参考模型与B—ISDN协议参考模型的比较

分析了ＯＳＩ参考模型和Ｂ－ＩＳＤＮ协议参考模型之间的关系，为Ｂ－ＩＳＤＮ与以ＯＳＩ为标准的数据网的互联打下了基础。     

F／Cl比与Eu~（2＋）：BaFCl中F色心的浓度和光激励截面的关系

研究了Ｅｕ（２＋）：ＢａＦｘＣｌ２在紫外线辐照下的光激励发光。通过改变激励方式及激励光的扫描方向，给出了Ｅｕ（２＋）：ＢａＦｘＣｌ２－ｘ光激励发光过程中，两种Ｆ色心的浓度比值与光激励截面比值的测定方法。利用这种测定方法，进一步研究了两种Ｆ色心的浓度比值和光激励截面比值与Ｆ／ＣＩ比值的关系。     

基于ATM的网络互连方式

ＡＴＭ技术能否在数据通信网中广泛采用取决于其是否能高效地支持现有业务，其中主要为非连接业务。本文介绍了几种基于ＡＴＭ 的非连接业务支持方式和协议体系结构，对其进行了评述并对ＩＰ分组到ＡＴＭ信元的封装效率进行了分析。     

Research on sound radiation from body in free field

I.IntroductionWhenastructurcvibratcs,itsvibratingsurfacewillmakesurroundingmediummovetogethcrwithit.Ifthernotionissofastthatthcmediumroundthestructureproduccaloca1contractionandcxpansionandthcypropagatefaraway,thesoundradiationisformed.Itispossiblctodcscribeanalytica11ytheradiationfic1dofsimplyandregularlyshapcdsourcessuchaspointsoundsourccs,spherica1soundsourccsandinflnite1engthllnearsoundsourccs,butitisa1mostimpossib1ctosolvetheradiationfiledbyanyanalyt-ica1methodforsourcesofvcrycomplicateds…     

激光扫描共焦荧光显微镜的电子控制系统研究

介绍了激光扫描共焦荧光显微镜的电子控制系统，为了提高激光扫描器的定位精度，在系统中提出采用基于闭环象素时钟发生器的检流计振镜所固有的扫描非线性失真补偿方案，减少输出图象的枕形畸变，实现行扫描空间位置的均匀性。在以细分梯形波电流驱动反应式步进电机情况下，根据实测θｉ曲线，用反插法求得与步进电机运行非均匀性相补偿的相电流波，从而获得在小电流情况下高角度均匀的步进电机细分运行特性。