用于移动支付的高精度高灵敏度时钟恢复电路

介绍了一个应用在移动支付系统里的全集成载波时钟恢复电路。它由一个采样检测模块和一个电荷泵锁相环组成。与传统13.56MHz标签里的时钟恢复电路相比,这个电路能够从开关键控信号里恢复高精度的连续载波时钟。整个芯片由0.18μm EEPROM CMOS工艺制造,工作电压为1.5V。实验结果表明该电路恢复频率的偏移为0.34%,灵敏度为8mV。     

Iterative restoration of MR images corrupted with translational motion

Patient motion during the acquisition of magnetic resonance imaging data causes loss of resolution and ghost repetitions of the moving structures in the reconstructed image. In this paper the motion is modeled as being translational, and it is shown that this causes either the magnitude or the phase of the data to be corrupted, depending upon whether the motion is within or perpendicular to the imaging plane. The problem of restoring the image using only the corrupted data and no knowledge about the motion is addressed. The restoration problem is nonlinear in general, but is linear in two special cases. An iterative algorithm is developed that uses projections onto convex sets for magnitude retrieval and generalized projections for phase retrieval. In both cases constraint sets containing all a priori knowledge are used, and this is shown to be necessary for rapid convergence. The two algorithms may be combined to restore images corrupted by three-dimensional motion. The algorithms were verified using simulated data.     

自旋场效应晶体管的电学特性研究(英文)

用非平衡格林函数方法研究一种自旋场效应晶体管的电子输运特性。结果表明,不考虑自旋散射的作用,当漏极电压比较小时该器件能达到很高的磁阻比率。对该器件在考虑自旋散射和不考虑自旋散射下的输出电流进行对比,发现在铁磁平行(反平行)的条件下,考虑自旋散射时的输出电流要比不考虑自旋散射时的输出电流小(大)。研究结果揭示了该器件的物理机制,为该器件的优化设计提供了理论指导。     

基于高速DSP处理器的CMOS图像采集系统

提出一种以高度集成的CMOS图像传感器模组作为光学图像接收器件,以高速DSP处理器作为核心处理器件的基于CMOS图像传感器和高速DSP处理器的图像采集系统。介绍了系统的硬软件设计和质心计算的算法。结果表明,基于高速DSP处理器的CMOS图像采集系统可作为独立单元存在,并具有体积小、处理速度快、成本低且功耗低等优点。     

Economic Approaches for Cognitive Radio Networks: A Survey

Efficient resource allocation is one of the key concerns of implementing cognitive radio networks. Game theory has been extensively used to study the strategic interactions between primary and secondary users for effective resource allocation. The concept of spectrum trading has introduced a new direction for the coexistence of primary and secondary users through economic benefits to primary users. The use of price theory and market theory from economics has played a vital role to facilitate economic models for spectrum trading. So, it is important to understand the feasibility of using economic approaches as well as to realize the technical challenges associated with them for implementation of cognitive radio networks. With this motivation, we present an extensive summary of the related work that use economic approaches such as game theory and/or price theory/market theory to model the behavior of primary and secondary users for spectrum sharing and discuss the associated issues. We also propose some open directions for future research on economic aspects of spectrum sharing in cognitive radio networks.     

Efficient Charge Injection in Organic Field‐Effect Transistors Enabled by Low‐Temperature Atomic Layer Deposition of Ultrathin VOx Interlayer

Charge injection at metal/organic interface is a critical issue for organic electronic devices in general as poor charge injection would cause high contact resistance and severely limit the performance of organic devices. In this work, a new approach is presented to enhance the charge injection by using atomic layer deposition (ALD) to prepare an ultrathin vanadium oxide (VO_x) layer as an efficient hole injection interlayer for organic field‐effect transistors (OFETs). Since organic materials are generally delicate, a gentle low‐temperature ALD process is necessary for compatibility. Therefore, a new low‐temperature ALD process is developed for VO_x at 50 °C using a highly volatile vanadium precursor of tetrakis(dimethylamino)vanadium and non‐oxidizing water as the oxygen source. The process is able to prepare highly smooth, uniform, and conformal VO_x thin films with precise control of film thickness. With this ALD process, it is further demonstrated that the ALD VO_x interlayer is able to remarkably reduce the interface contact resistance, and, therefore, significantly enhance the device performance of OFETs. Multiple combinations of the metal/VO_x/organic interface (i.e., Cu/VO_x/pentacene, Au/VO_x/pentacene, and Au/VO_x/BOPAnt) are examined, and the results uniformly show the effectiveness of reducing the contact resistance in all cases, which, therefore, highlights the broad promise of this ALD approach for organic devices applications in general.     

一类新型混沌反馈密码序列的理论设计

本文提出了一种新型混沌映射,“逐段二次方根”映射,用于反馈密码序列的设计,该映射可产生具有均匀分布 函数和δ－ｌｉｋｅ自相关函数的模拟混沌序列,它们经过一类特殊变换的量化后可生成具有安全统计性质的０－１序列,与周红等人提出的映射相比,该新映射提供了更强的安全性,这是因为它在保留了原有的优良统计性质的基础上解决了“逐段线性”的缺陷并扩大了密钥空间。     

GPRS在供水调度监控系统中的应用

针对当前城市供水调度监控点分布范围广、数量多、距离远的现状，提出了一种基于GPRS技术的城市供水调度监控系统的设计和实现方法。具体描述了监控现场的硬件连接；同时对该技术的应用前景进行了展望。     

New Strategy for Polysulfide Protection Based on Atomic Layer Deposition of TiO2 onto Ferroelectric‐Encapsulated Cathode: Toward Ultrastable Free‐Standing Room Temperature Sodium–Sulfur Batteries

The room temperature (RT) sodium–sulfur batteries (Na–S) hold great promise for practical applications including energy storage and conversion due to high energy density, long lifespan, and low cost, as well based on the abundant reserves of both sodium metal and sulfur. Herein, freestanding (C/S/BaTiO₃)@TiO₂ (CSB@TiO₂) electrode with only ≈3 wt% of BaTiO₃ additive and ≈4 nm thickness of amorphous TiO₂ atomic layer deposition protective layer is rational designed, and first used for RT Na–S batteries. Results show that such cathode material exhibits high rate capability and excellent durability compared with pure C/S and C/S/BaTiO₃ electrodes. Notably, this CSB@TiO₂ electrode performs a discharge capacity of 524.8 and 382 mA h g^?1 after 1400 cycles at 1 A g^?1 and 3000 cycles at 2 A g^?1, respectively. Such superior electrochemical performance is mainly attributed from the “BaTiO₃‐C‐TiO₂” synergetic structure within the matrix, which enables effectively inhibiting the shuttle effect, restraining the volumetric variation and stabilizing the ionic transport interface.     

IR2304半桥驱动集成电路的功能原理及应用

IR2304是美国IR公司生产的新一代半桥驱动集成芯片，该芯片内部集成了互相独立的控制驱动输出电路，可直接驱动两个中功率半导体器件如MOSFET或IGBT，动态响应快，驱动能力强，工作频率高，且具有多种保护功能。文中介绍了IR2304的功能特点、工作原理和典型应用电路。