A new molecular rectifier device and some research in its processing

Organic materials of D-π-A type MR-X (MR-1: p-dimethylaminophenylethenetrica-rbonitrile and MR-2: p-diphenylaminophenylethene tricarbonitrile) were designed and synthesized. The device with a sandwich structure shows good rectificative phenomena. The highest rectification ratio 10000 was achieved in device Cu/MR-1/Ag, and about 100 in other device M/MR-X/M (M: Cu, Ag). It has been found that rectificative phenomena exist only in the atmosphere-liquid interface region by means of liquid adsorption, and electric field could help form the oriented molecular film. __________ Translated from Journal of Fudan University (Natural Science), 2005, 44(4) (in Chinese)     

精细功能陶瓷的若干发展趋势

概括了分析自９０年代初以来精细功能陶瓷的发展趋势，提出了一些相关的研究领域。     

关于(?)-拟微分核的连续性

Supposa that f(x) is a quasidifferentiable function, defined on S(?)R~n where S is an open set, with a -equivalent bounded quasidifferential subfam ily. Lenma I     

COMPACT COUPLED LINEAR TAPERED LINE BANDPASS FILTER WITH TWO TRANSMISSION ZEROS

A new compact bandpass filter composed of two coupled linear tapered line resonators (LTLRs) is designed. The two resonators are arranged in different layers. The filter has two transmission zeros on both sides of the passband. It has small size and steep response below its passband. It is also shown that this filter has 0.6 dB low insertion loss at the centre frequency and 10.5% 3dB bandwidth. This work was supported by the Development Foundation of Shanghai Educational Committee (217608) and Shanghai Leading Academic Discipline Project (T0102).     

稀掺杂GaNxAs1－x(x≤0.03)薄膜的调制光谱研究

利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaN_xAs_1-x薄膜，并对图谱中所观察的光学跃迁进行了指认.在GaN_0.005As_0.995和GaN_0.01As_0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E₁+Δ₁+Δ_N.当N掺杂浓度达到 关键词： 压电调制反射光谱(PzR) xAs_1-x薄膜')" href="#">GaN_xAs_1-x薄膜 分子束外延(MBE)     

CsNiCl3晶体的光谱精细结构、零场分裂参量及Jahn-Teller效应

应用不可约张量理论构造了三角对称晶场中3d²/3d⁸态离子的45阶可完全对角化的微扰哈密顿矩阵，研究了CsNiCl₃晶体的光谱精细结构、晶体结构、零场分裂参量、Jahn-Telller效应以及自旋单重态对Ni²⁺离子基态能级的影响，理论与实验相符合.在此基础上，进一步研究了以前工作中被忽略的自旋-自旋耦合作用和Trees修正对CsNiCl₃晶体的光谱精细结构和零场分裂参量的影响，发现有四种机理会影响零场分裂参量：1)自旋-轨道耦合机理，2)自旋-自旋耦合机理；3)自旋-轨道与自旋-自旋联合耦合机理；4)自旋-轨道与Trees修正联合耦合机理，其中自旋-轨道耦合机理是最主要的，其他三种机理也是不可忽略的. 关键词： 基态能级 精细结构 零场分裂 自旋-自旋耦合     

980 nm激发下Er3+/Yb3+共掺杂ZrO2-Al2O3粉末的上转换发光特性

通过固相反应法制备了Er3+/Yb3+共掺杂ZrO2-Al2O3粉末的样品,并对样品在980nm激光激发下的上转换发光特性进行了研究.从发射光谱可以发现,在可见光范围内有3个强的发光带,一个位于654nm附近的红光带和两个分别位于545nm、525nm附近的绿光带,分别对应于Er3+离子的以下辐射跃迁:4F9/2→4I15/2、4S3/2→4I15/2、2H11/2→4I15/2.其中又以Er3+离子的4F9/2→4I15/2跃迁产生的红色荧光辐射最强.对其上转换发光机制进行了分析,发现这三个发光过程都是双光子过程.对样品粉末进行了XRD检测,发现ZrO2主要以立方相为主,并且计算得到了这种立方结构的晶格常数.Al2O3固溶于ZrO2中,Al3+嵌入ZrO2后产生氧空位,导致ZrO2晶体的对称性降低,这种结构变化更有利于提高上转换效率,即上转换发光强度增强.     

掺入Ni元素的LiCoO2晶体光谱结构及电子顺磁共振g因子

在弱场图像下,利用Racah不可约张量算符方法得到了三角对称3d4/3d6电子组态的210阶可完全对角化的微扰哈密顿矩阵、最近邻点电荷模型晶体结构常量公式和电子顺磁共振g因子公式.研究了LiCoO2晶体和掺入Ni的LiCoO2:Ni晶体中Co3+的基态能级、晶体结构和电子顺磁共振g因子.考虑了LiCoO2晶体和LiCoO2:Ni晶体中自旋单重态和三重态对Co3+基态能级的影响,讨论了LiCoO2晶体和在LiCoO2晶体中掺杂Ni后Co3+局域结构常量大小的变化是引起Co3+的基态能级变化的主要原因,理论和实验都证实了这一点.还计算了掺杂前后的电子顺磁共振g因子,计算结果与实验值符合得较好.     

The number of limit cycles of cubic Hamiltonian system with perturbation

In this paper, by using qualitative analysis, we investigate the number of limit cycles of perturbed cubic Hamiltonian system with perturbation in the form of (2n+2m) or (2n+2m+1)th degree polynomials . We show that the perturbed systems has at most (n+m) limit cycles, and has at most n limit cycles if m=1. If m=1, n=1 and m=1, n=2, the general conditions for the number of existing limit cycles and the stability of the limit cycles will be established, respectively. Such conditions depend on the coefficients of the perturbed terms. In order to illustrate our results, two numerical examples on the location and stability of the limit cycles are given.     

一个可切实服务于运营商的移动无线因特网

本文在简单介绍了移动IP及其路由优化，无线局域网（WLAN）和GPRS的基础上，提出了一个新的利用移动IP来融合WLAN和GPRS的移动无线因特网的网络结构，详细论述了其多连接的路由过程，平滑垂直切换，AAA，并做了简要的性能分析。