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41.
A numerical simulation is performed to investigate the flow induced by a sphere moving along the axis of a rotating cylindrical container filled with the viscous fluid. Three‐dimensional incompressible Navier–Stokes equations are solved using a finite element method. The objective of this study is to examine the feature of waves generated by the Coriolis force at moderate Rossby numbers and that to what extent the Taylor–Proudman theorem is valid for the viscous rotating flow at small Rossby number and large Reynolds number. Calculations have been undertaken at the Rossby numbers (Ro) of 1 and 0.02 and the Reynolds numbers (Re) of 200 and 500. When Ro=O(1), inertia waves are exhibited in the rotating flow past a sphere. The effects of the Reynolds number and the ratio of the radius of the sphere and that of the rotating cylinder on the flow structure are examined. When Ro ? 1, as predicted by the Taylor–Proudman theorem for inviscid flow, the so‐called ‘Taylor column’ is also generated in the viscous fluid flow after an evolutionary course of vortical flow structures. The initial evolution and final formation of the ‘Taylor column’ are exhibited. According to the present calculation, it has been verified that major theoretical statement about the rotating flow of the inviscid fluid may still approximately predict the rotating flow structure of the viscous fluid in a certain regime of the Reynolds number. Copyright © 2004 John Wiley & Sons, Ltd. 相似文献
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多版本软件通过设计相异性实现了软件容错。为了对这种方法进行研究,我们的课题实现了一个三版本软件系统,称之为SFTMP(SoftwareFault-TolerantMultiProcessor)。本文描述了SFTMP的硬件结构和软件执行支持环境,该环境包括同步、表决和监控功能、版本间的通讯及故障的恢复和重构。 相似文献
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AStudyontheModelofForecastingSystemabouttheActualTelephoneOccupationintheLeadDevelopment¥XieShichang;andXieXuemei(Departmento... 相似文献
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概述了美国几种较成熟的热煤气脱硫吸附剂的配方、制备技术及吸附剂在若干试验条件下强度、活性、寿命等宏观特性的测试结果。 相似文献
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E. A. Fitzgerald Y. -H. Xie D. Brasen M. L. Green J. Michel P. E. Freeland B. E. Weir 《Journal of Electronic Materials》1990,19(9):949-955
We have grown Ge x Si1-x (0 <x < 0.20,1000–3000Å thick) on small growth areas etched in the Si substrate. Layers were grown using both molecular beam epitaxy (MBE) at 550° C and rapid thermal chemical vapor deposition (RTCVD) at 900° C. Electron beam induced current images (EBIC) (as well as defect etches and transmission electron microscopy) show that 2800Å-thick, MBE Ge0.19Si0.81 on 70-μm-wide mesas have zerothreading and nearly zero misfit dislocations. The Ge0.19Si{0.81} grown on unpatterned, large areas is heavily dislocated. It is also evident from the images that heterogeneous nucleation of misfit dislocations is dominant in this composition range. 1000Å-thick, RTCVD Ge0.14Si0.86 films deposited on 70 μm-wide mesas are also nearly dislocation-free as shown by EBIC, whereas unpatterned areas are more heavily dislocated. Thus, despite the high growth temperatures, only heterogeneous nucleation of misfit dislocations occurs and patterning is still effective. Photoluminescence spectra from arrays of GeSi on Si mesas show that even when the interface dislocation density on the mesas is high, growth on small areas results in a lower dislocation density than growth on large areas. 相似文献