电子辐照诱发固态相变导致的氮化硼纳米结构生长

报道了N+离子轰击产生的氮化硼(BN)纳米结构,及在电子辐照时结构演化的高分辨透射电子显微镜的原位测定结果.应当强调的是,这种类富勒烯和发夹结构的演化,实际上是电子辐照诱发固态相变的发展,观察中发现的一些BN颗粒、卷曲物,可以被认为是类富勒烯等纳米结构形成的前体或早期阶段.提出了一种类富勒烯等结构的电子辐照动力学模型,并进行了讨论. 关键词： 氮化硼 电子辐照 透射电子显微镜 氮化硼纳米形成物     

Precise measurement of magnetic moment of short-lived β-emitting nuclei12B ( I π=1+, T 1/2=20.18 ms)

The spin polarized β-emitting nuclei¹²B (I ^π=1⁺,T _1/2=20.18 ms) were produced by the nuclear reaction¹¹B(d, p)¹²B and by the selection technique of the incident deuteron energy and the¹²B recoil angle following the nuclear reaction. The nuclear magnetic moment of the short-lived nuclei¹²B was measured by β-NMR with the β-NMR and β-NQR setup established for the first time in China. The nuclear magnetic moment of¹²B was determined to be μ=0.99993±0.00048 nm org=0.99993±0.00048 after the precise correction of the Knight shift.     

掺Yb相移光纤光栅形成过程的分析

研究了用二次曝光法制作掺Yb相移光纤光栅的实验过程 ,并对相移光纤光栅制作过程中出现次峰的情况进行了理论分析。合理地解释了该现象     

Discrete global descent method for discrete global optimization and nonlinear integer programming

A novel method, entitled the discrete global descent method, is developed in this paper to solve discrete global optimization problems and nonlinear integer programming problems. This method moves from one discrete minimizer of the objective function f to another better one at each iteration with the help of an auxiliary function, entitled the discrete global descent function. The discrete global descent function guarantees that its discrete minimizers coincide with the better discrete minimizers of f under some standard assumptions. This property also ensures that a better discrete minimizer of f can be found by some classical local search methods. Numerical experiments on several test problems with up to 100 integer variables and up to 1.38 × 10¹⁰⁴ feasible points have demonstrated the applicability and efficiency of the proposed method.     

High performance 1689-nm quantum well diode lasers

1689-nm diode lasers used in medical apparatus have been fabricated and characterized. The lasers had pnpn InP current confinement structure, and the active region consisted of 5 pairs of InGaAs quantum wells and InGaAsP barriers.     

Sobolev空间H~s(R~n)上矩阵伸缩的多尺度分析特征刻画

本文对高维Sobolev空间Hs(Rn)上具有矩阵伸缩的多尺度分析特征进行了 刻划,特别给出了稠密性特征的一个充分必要条件,从而解决了文献[4]中提出的一个 问题.所得结果覆盖了这方面的已知结论.     

聚能射流的断裂时间

从描述聚能射流失稳的一维近似方程出发，导出了聚能射流断裂时间的近似公式。这个近似公式定量显示了屈服应力、本构关系、粘度和径向收缩效应等对射流断裂时间的影响，在４个不同的特殊近似下，可以自然演化为近１０年来所发表的几个半经验解析公式，并且在合理的参数范围内，公式给出的断裂时间曲线覆盖了射流断裂时间的全部实验点。     

B－ISDN中的拥塞控制技术

Ｂ－ＩＳＤＮ是现代电信网的发展方向，拥塞控制技术则是其中的一个重要问题。由于Ｂ－ＩＳＤＮ采用新的信息传递方式──ＡＴＭ，使传统的拥塞控制方法不再适用。本文依据ＩＴＵ－Ｔ有关建议的最新内容对Ｂ－ＩＳＤＮ拥塞控制的基本思想、工作机制以及其中的主要功能作了较为详细的分析讨论，并提出了一些Ｂ－ＩＳＤＮ拥塞控制技术中尚需进一步研究的问题。     

锥形有源条半导体光放大器增益和饱和特性分析

以行波半导体光放大器速度方程为基础，采用传输矩阵方法，对锥形结构半导体光放大器的增益和饱和特性进行理论研究。讨论了不同锥形长度，不同结构时的增益和饱和特性差异。理论研究表明，锥形结构能改善半导体光放大器的偏振灵敏度。在同一锥度下，长锥形长度能提高饱和增益，降低偏振度。在进行半导体光放大器有源条结构设计时要综合考虑锥度及锥形长度的影响，以实现结构优化 。     

Synthesis of GaN Nanorods by Ammoniating Ga2O3/ZnO Films

Large quantities of CaN nanorods are successfully synthesized on Si（111） substrates by ammoniating the films of Ga2O3/ZnO at 950℃ in a quartz tube. The structure, morphology and optical properties of the as-prepared CaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the CaN nanorods have a hexagonal wurtzite structure with lengths of several micrometres and diameters from 80 nm to 300hm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed.