Quantum Secure Communication Using a Class of Three-Particle W State

A theoretical scheme of quantum secure communication using a class of three-particle W states is proposed. In the scheme, two communicators may communicate after they test the security of the quantum channel. The receiver can obtain the secret message determinately if the quantum channel is safe. The present scheme can be realized without using teleportation.     

Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

One-dimensional wurtzite InN nanowires and zincblende InN nanorods are prepared by chemical vapour deposition （CVD） method on natural cleavage plane （110） of GaAs. The growth direction of InN nanowires is [100], with wurtzite structure. The stable crystal structure of InN is wurtzite （w-InN）, zincblende structure （z-InN） is only reported for 2D InN crystals before. However, in this work, the zincblende InN nanorods [011] are synthesized and characterized. The SEM and TEM images show that every nanorod shapes a conical tip, which can be explained by the anisotropy of growth process and the theory of Ehrlich Schwoebel barrier.     

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on γ-LiAlO_2

We report the structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs grown by MOCVD on a 7-LiAlO2 （100） substrate. The TMGa, TMIn and NH3 are used as sources of Ga, In and N, respectively. The structural and surface properties of the epilayers are characterized by x-ray diffraction, polarized Raman scattering and atomic force microscopy （AFM）. The films have a very smooth surface with rms roughness as low as 2nm for an area of 10×10μm^2 by AFM scan area. The XRD spectra show that the materials grown on 7-LiAl02 （100） have （1 - 100） m-plane orientation. The EL spectra of the m-plane InGaN/GaN multiple quantum wells LEDs are shown. This demonstrates that our nonpolar LED structure grown on the 7-LiAlO2 substrate is indeed free of internal electric field. The current voltage characteristics of these LEDs show the rectifying behaviour with a turn on voltage of 1-3 V.     

四硫富瓦烯衍生物的银(Ⅰ)配位聚合物的合成与表征

在室温下,以丙酮为溶剂,三氟甲基磺酸银与4,5-二甲硫基-1,3-二硫代环戊烯-2-硫酮(C5H6S5)反应得到一个二维配位聚合物[Ag(C5H6S5)].CF3SO3.(CH3)2CO(1).单晶采用惰性溶剂扩散法培养.X-ray单晶衍射分析表明,1属于正交晶系,P212121空间群,晶胞参数:a=0.825 7(5)nm,b=0.972 1(6)nm,c=2.143(1)nm,V=1.720(1)nm3.在1中一个银离子与不同配体的三个硫原子配位,同时一个配体的两个硫原子参与和银离子配位,形成二维阶梯结构,在二维聚合物分子内存在较强的S…S相互作用,聚合物室温电导率为3.95×10-7S.cm-1,属于半导体.经过碘掺杂后化合物的电导率达到6.80×10-7S.cm-1.     

人参皂苷的仿生提取研究

通过体外模拟胃肠道环境,建立一种提取人参皂苷的仿生方法.考察了提取条件对配制的仿生胃液和仿生肠液提取人参皂苷浓度的影响.基于高效液相色谱-三重四极杆质谱的多反应监测模式建立定量分析Re,Rg1,20(S)-Rf,Rb1,Ro,Rc,Rb2,Rd等8种人参皂苷的方法,并比较了仿生和超声两种提取方法的人参皂苷提取效率.结果...     

Controlled Quantum Teleportation of a One-Particle Unknown State via a Three-Particle Entangled State

A kind of three-particle entangled state is applied as quantum channel of the controlled quantum teleportation of a one-particle unknown state. The one-particle unknown state is transmitted from the sender to the recipient under the control of the supervisor. After the sender makes Bell-state measurement and the supervisor performs von Neumann measurement, the recipient carries out unitary transformation on his own particle depending on classical information from the sender and the supervisor. The teleportation cannot be completed successfully by the recipient if the supervisor does not agree to cooperate. The roles of the recipient and the supervisor may be exchanged in this scheme. The scheme is flexible and feasible because the sequence of manipulation of the sender and the supervisor may be exchanged and only simple unitary transformation is included.     

极化子比率变化对自旋注入有机半导体性质的影响

从自旋扩散方程和欧姆定律出发研究了铁磁层到有机半导体的自旋注入,得到了系统的电流自旋极化率。有机半导体中的载流子为自旋极化子和不带自旋的双极化子,极化子比率在有机半导体内随输运距离变化。通过计算发现匹配的铁磁和有机半导体电导率有利于自旋注入;通过调节界面电阻自旋相关性,电流自旋极化率可获得很大程度提高;极化子比率衰减速率对有机半导体电流自旋极化率具有非常重要的影响。     

一种基于H.264标准的高效比特率转码结构

本文基于H.264视频编码标准提出了一种高效的比特率转码结构.这种结构对像素域级联转码结构进行了改进,通过运动矢量复用和结构简化使得转码器复杂度有了很大程度的降低.并通过对参考帧之间的误差进行补偿,克服了开环结构中漂移误差对视频恢复质量的影响.实验结果表明:该结构在保证与像素域级联转码结构相近视频恢复质量前提下,大幅度降低了转码时间,可以应用于实时处理,是一种高效的转码结构.     

退火温度对纳米ZnO薄膜结构与发光特性的影响

利用溶胶鄄凝胶法在硅衬底上制备了纳米ZnO薄膜。研究了热处理对ZnO薄膜的质量与发光性能的影响。结果表明,纳米ZnO薄膜具有六方纤锌矿结构,并且,随着退火温度的升高,ZnO的晶粒变大,c轴取向性变好,紫外发光强度增强。     

不同介质里Gd2O3∶Eu3+纳米晶中Eu3+的自发辐射

对不同介质包围的Gd2O3∶Eu3 纳米颗粒的发光性质进行了研究。从发射光谱观察到Eu3 的4f组态内跃迁峰位受周围介质的影响不大。Gd2O3纳米颗粒中Eu3 的5D0的自发发射寿命受周围介质的局域场影响很大,主要与介质的有效折射率和纳米颗粒的填充率有关。有两种模型可以描述自发辐射寿命与周围介质的相互作用:Onsanger-实腔模型与Lorentz虚腔模型。本实验结果表明,实腔模型比较合理,而虚腔模型与实验数据偏差较大。