Entanglement system,Casimir energy and black hole

We investigate the connection between the entanglement system in Minkowski spacetime and the black hole using the scaling analysis. Here we show that the entanglement system satisfies the Bekenstein entropy bound. Even though the entropies of two systems are the same form, the entanglement energy is different from the black hole energy. Introducing the Casimir energy of the vacuum energy fluctuations rather than the entanglement energy, it shows a feature of the black hole energy. Hence the Casimir energy is more close to the black hole than the entanglement energy. Finally, we find that the entanglement system behaves like the black hole if the gravitational effects are included properly.     

Different effects of cerium ions doping on properties of anatase and rutile TiO2

Pure and Ce⁴⁺ doped anatase and rutile TiO₂ were prepared by hydrothermal methods and characterized by XRD, TEM, UV-vis diffusion spectroscopy, and XPS measurements. The photocatalytic reactivity of the catalysts was evaluated by the photodegradation of Rhodamine B (RB) under ultraviolet irradiation. The photocatalytic efficiency of the rutile sample doped with an appropriate amount of Ce⁴⁺ was enhanced while all Ce⁴⁺ doped anatase samples showed a much lower activity than pure anatase. The reasons were discussed     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.     

未知相关噪声环境下宽带源波达方向估计的快速算法

提出一种未知相关噪声环境下带源波达方向估计的快速算法。该算法只对信号子空间进行变换,直接由传播算子构造聚焦矩阵,得到一种快速TCT聚焦矩阵。利用阵列相关矩阵的酉相似变换特性估计噪声相关矩阵,提高了未知相关噪声情况下宽带DOA估计的性能。该算法由线性运算求解聚焦矩阵和噪声相关矩阵,无需特征分解,运算量低,而且适用于未知相关噪声情况,具有重要的工程实用价值。     

Use of Fiber Bragg Grating Sensors for Determination of a Simply Supported Rectangular Plane Plate Deformation

A measurement method has been developed to determine the full-field deformation of a simply supported plane plate under transverse load. The method utilizes strain information provided by a set of four fiber Bragg grating sensors mounted on the plate in a way that all sensors measure strains along one certain direction. The sensors were interrogated using a wavelength swept fiber laser. Utilizing the strain information and the first four terms of Navier solution of simply supported rectangular plate, the necessary parameters for determining the deflection could be computed. By substituting the values of x- and -y- coordinates of each position on the rectangle plate, the full-field deformation information can be obtained. Single-point loading tests were experimentally performed to verify the accuracy of the method.     

FI代数的滤子

研究FI代数的滤子理论，建立F滤子、P滤子、Q滤子、C滤子之间的联系．     

正交变换在重积分中某些应用

正交变换是代数学的基本内容 ,其用途十分广泛 .重积分的计算往往存在技术性的困难 ,若利用“正交变换”的有关理论去解决某些重积分的计算问题是颇有功效的 .本文将以“正交变换”为工具 ,简洁的处理重积分的某些问题     

Formation of p-type ZnO film on InP substrate by phosphor doping

ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn₃P₂ was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn₃P₂ diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.     

铁通资源管理系统的设计和实现

在分析铁路通信资源结构的基础上,利用地理信息系统技术、数据库技术和客户/服务器(C/S)模式,为铁通(ChinaTietong)各级分公司和运营部门提供一套较为完善的资源管理信息系统。文中分析了铁通资源的结构与资源之间的关联,介绍了系统功能、物理结构及体系结构,详细分析了数据库设计、地理信息系统和系统安全性所采用的关键技术。这套系统的应用对铁通网络管理的现代化将起到重要的推动作用。     

光电双基区晶体管(PDUBAT)的器件模型

本文在考虑了晶体管的小注入效应和大注入效应以及基区宽变效应等因素后,首次用近似和简化的数学表示式和相应的等效电路,描述了光电双基区晶体管(PDUBAT)负阻形成的机理并使负阻区和谷值区的理论计算和实验结果一致性很好.