GLq(N)-covariant braided differential bialgebras

We study the possibility of defining the (braided) comultiplication for the GL _q (N)-covariant differential complexes on some quantum spaces. We discover suchdifferential bialgebras (and Hopf algebras) on the bosonic and fermionic quantum hyperplanes (with additive coproduct) and on the braided matrix algebra BM _q (N) with both multiplicative and additive coproducts. The latter case is related (forN = 2) to theq-Minkowski space andq-Poincaré algebra.     

连续双向联想记忆模型的稳定性分析

对于连续型Ｈｏｐｆｉｅｌｄ模型的平衡态特征，目前人们已经得到了很多富有意义的成果，本文说明，连续Ｈｏｐｆｉｅｌｄ模型的大部分结论都可以推广到连续双向联想记忆模型，我们重点讨论了平衡态条件、渐近稳定性以及围绕一稳定平衡点的吸引域等问题，所得到的结论对于ＢＡＭ的设计和应用都是很有意义的。     

插值多项式对解析部分的收敛估计

设D是单位圆{z||z|<1},T为单位圆周{z||z|=1}.对于f∈C(T),我们记L_n(f,z)为在n 1次单位根{e~(2kπ/n 1)i}~n_k=0上对f(z)的n次插值多项式.自然的L_n(f,z)在D内解析,因此,当f不能解析延拓到D内时,就不可能保证L_n(f,z)一致收敛于f.甚至,存在着f∈C(T),且f是某个D内解析函数的边值,但L_n(f,z)在T上发散.     

PHOTOIONIZATION IN AN INTENSE LASER FIELD

In this paper classical approaches are used to study the detailed processes of photoion-ization in an intense laser field. The analytic expression of the ionization rate is derived. Finally, the results obtained are compared with existing theories such as Landau's tunnel theory and Keldysh-Faisal-Reiss theory.     

纳米硅薄膜光吸收谱的研究

用恒定光电导法测量了纳米硅(其晶粒尺寸为3-5nm,晶态成分比X_c为45％—50％)薄膜在0.9—2.5eV范围的光吸收谱。分析了在不同光子能量范围可能存在的对光电导作主要贡献的几种光跃迁过程,以及随着X_c的增加,材料由非晶、微晶转变为纳米硅薄膜时光吸收谱的变化。发现纳米硅晶粒之间的界面区(平均厚度约为1nm)中载流子的跃迁及传输过程对整个范围的光吸收谱起主导作用。联系纳米硅的这种特殊结构解释了有关实验结果。 关键词：     

SXDG-1型汽车前照灯全自动检测仪的微机控制

SXDG—1型汽车前照灯全自动检测仪是用于检测汽车前照大灯光轴的偏斜情况及发光强度并进行定量检验的专用设备。它可以自动测出有关参数,并予以数字显示和打印输出。本文介绍了该仪器的主要性能、工作原理及微机控制系统(包括硬件结构和软件设计思想等)。     

The Investigation of Bulk and Surface Polariton Modes in Ga1?xNxAs by Using Infrared Magneto Spectroscopy

We present and discuss infrared magnetoplasma reflectivity and surface polariton modes in Ga_1–xN_xAs. It assumed that the sample is characterized by a magnetoplasma dielectric tensor. Surface polariton dispersion for two component magnetoplasma was calculated from reflectivity spectra data. We detect transverse optic phonon of GaN sublattice in 470 cm^-1. The origin of sharp feature in p-polarization reflectivity about 300 cm^–1 as well as LO phonon frequency of GaAs sublattice is due to Brewster mode. An interesting feature of surface modes in Voigt geometry is nonreciprocalicity, which means that the frequency changes when the direction of propagation is reversed. Also, the infrared magnetoplasma reflectivity of GaNAs should be providing determination of the electrons and heavy holes effective mass and carrier's concentration.     

Thermal Characterization of 1.3 μm InAsP/InGaAsP Ridge Waveguide MQW Lasers Based on Spectroscopy Method

An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated. Results show that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges, the thermal resistance of the laser diodes could be deduced easily. A higher thermal resistance of 640 K/W has been measured on a narrow ridge laser chip without soldering. Other thermal and spectral properties of the lasers have also been measured and discussed.