Dissipative Nonlinear Evolution Equations and Chaos

In this article we have studied the nonlinear interaction between ellipticity and dissipation in a set of model equations (1.1) and established the relation between this interaction and chaos. In addition to theoretical investigations, extensive numerical simulations with these equations have been made, and different routes to chaos have been found. The numerical studies have revealed the chaotic nature of the solutions.     

Singular value decomposition-based MA order determination ofnon-Gaussian ARMA models

Singular-value-decomposition (SVD)-based moving-average (MA) order determination of non-Gaussian processes using higher-order statistics is addressed. It is shown that the MA order determination of autoregressive moving-average (ARMA) models is equivalent to the rank determination of a certain error matrix, and a SVD approach is proposed. Its simplified form is applied to pure MA models. To improve the robustness of the order selection, a combination of the SVD and the product of diagonal entries (PODE) test is proposed. Some interesting applications of the two SVD approaches are presented, and simulations verify their performance     

Large-signal phase retardation with a poled electrooptic fiber

A linear electrooptic coefficient of 0.3 pm/V is induced in a germanosilicate fiber by thermal/electric-field poling. Reducing the fiber thickness by simple mechanical polishing following the poling, leads to a half-wave drive voltage of only 75 V for a 12-cm active length with no measurable linear optical loss in the fiber. The induced linear electrooptic coefficient shows no decay at room temperature for over four months, and only a 10% decay after heating to 90/spl deg/C for 1000 h.     

The reaction pattern of norbornene with excited state carbonyl compounds: Photochemical preparations of norbornene derivatives

We established that acetylacetone and acetone photolytically sensitize norbornene to undergo an efficient radical addition of solvent (ranging from hexane, cyclic ethers, haloalkanes, acetone, alcohols and acetonitrile) across the double bond. In view of its synthetic applicability, sensitized photoreactions of norbornene were reviewed and their mechanisms were compared. Photolysis of acetylacetone in the presence of norbornene in hexane induced i) acetylacetone to cycloadd to norbornene giving the expected 1,5-diketone, and ii) sensitization by triplet excited acetylacetone to generate reactive norbornene, which underwent dimerization as well as the addition of a solvent molecule by radical chain processes. In other solvents, the radical chain addition of solvent dominated the photoreaction, and superseded the cycloaddition, to give excellent to good yields of adducts to norbornene. While the excited species of acetylacetone for the sensitization was deduced to be its spectroscopic triplet excited state, that for the cycloaddition should involve a different one which may be a twisted triplet acetylacetone; sensitization experiments showed that the cycloaddition did not occur from the spectroscopic triplet state. Triplet excited acetone sensitized norbornene to undergo the same solvent addition more efficiently and cleanly than acetylacetone did. In view of various conflicts existing in the proposed energy transfer mechanism, the sensitized norbornene reactions were rationalized with electron transfer and a cation radical chain mechanism.     

Experimental study of a plasma-filled backward wave oscillator

Experimental studies of a plasma-filled X-band backward-wave oscillator (BWO) are presented. Depending on the background gas pressure, microwave frequency upshifts of up to 1 GHz appeared along with an enhancement by a factor of 7 in the total microwave power emission. The bandwidth of the microwave emission increased from ⩽0.5 GHz to 2 GHz when the BWO was working at the RF power enhancement pressure region. The RF power enhancement appeared over a much wider pressure range in a high beam current case (10-100 mT for 3 kA) than in a lower beam case (80-115 mT for 1.6 kA). The plasma-filled BWO has higher power output than the vacuum BWO over a broader region of magnetic guide field strength. Trivelpiece-Gould modes (T-G modes) are observed with frequencies up to the background plasma frequency in a plasma-filled BWO. Mode competition between the T-G modes and the X-band Tm₀₁ mode prevailed when the background plasma density was below 6×10¹¹ cm^-3 . At a critical background plasma density of ≃8×10¹¹ cm^-3 power enhancement appeared in both X-band and the T-G modes. Power enhancement of the S-band in this mode collaboration region reached up to 8 dB. Electric fields measured by the Stark-effect method were as high as 34 kV/cm while the BWO power level was 80 MW. These electric fields lasted throughout the high-power microwave pulse     

Oscillation of the scattering time in a 2D electron system with oval antidots

Electron scattering by a single barrier is predicted to reveal singularities as the magnetic field is changed, because the number of electron collisions with the barrier dramatically increases as chaotic orbits around the barrier are changed into periodic orbits. To test this experimentally we have measured the magnetoresistance of AlGaAs/GaAs heterostructures with a two-dimensional electron gas and a lateral lattice containing a macroscopic number of oval-shaped antidots fabricated using electron lithography. Reproducible fluctuations in the magnetoresistance are observed at low field, which are due to the oscillations of the number of electron collisions with the antidots. The number of collisions N before the electron escapes from the antidot has been calculated as a function of B in an electric field. The position of the maxima in N(B) obtained from calculations and experiment are in reasonable agreement.     

The standard model on non-commutative space-time

We consider the standard model on a non-commutative space and expand the action in the non-commutativity parameter . No new particles are introduced; the structure group is . We derive the leading order action. At zeroth order the action coincides with the ordinary standard model. At leading order in we find new vertices which are absent in the standard model on commutative space-time. The most striking features are couplings between quarks, gluons and electroweak bosons and many new vertices in the charged and neutral currents. We find that parity is violated in non-commutative QCD. The Higgs mechanism can be applied. QED is not deformed in the minimal version of the NCSM to the order considered. Received: 29 November 2001 / Published online: 25 January 2002     

Theory of a novel voltage-sustaining layer for power devices

The theory of a novel voltage-sustaining layer for power devices, called a Composite Buffer layer (CB-layer for short) is proposed. The CB-layer can be implemented in several ways, one particular implementation is used here, which consists of alternating n- and p-type regions, that are parallel to the direction of the applied electric field. In the off-state, the fields induced by the depletion charges of both region types compensate each other to allowing the doping in both n-regions and p-regions to be very high without causing a reduction of the breakdown voltage. In the onstate the heavy doping ensures the voltage drop is very low and that the saturation current density high. A simple relationship between the specific on-resistance and R_on and the sustaining voltage V_B can be shown to be R_on=2.53 × 10⁻⁷bV_B^1.23 ωcm², where the breadth b (in μm) of each region is much smaller than the thickness W. The design method of the CB-layer is discussed in some detail. The simulation results are shown to be in perfect agreement with the theory. The structure has application to a wide variety of different power devices. An RMOST structure has been used to demonstrate the benefits of the technique in the paper, for which excellent performance is demonstrated.     

Distribution of recombination currents in the space charge regionof heterostructure bipolar devices

This paper addresses the problem of the space charge region Shockley-Read-Hall (SRH) recombination currents in heterojunctions with one noncrystalline side. A formulation which generalizes previous works is discussed. The approach is based on the drift-diffusion model with a thermionic-field emission boundary condition. The main physical parameters which determine the relative contribution of each zone of the space charge region (SCR) to the total recombination current are identified. The general analysis is applied for the first time to amorphous/crystalline heterojunctions and design criteria are established to minimize the total recombination current