放大器En-In噪声模型的完善及其与Rn-Gn噪声模型的关系

目前，微波低噪声放大器设计中采用的Ｒｎ－Ｇｎ噪声模型只适用于高频、窄带和源导纳（Ｇｓ≠０）情况，其应用范围有限，特别是不适用于低频段的低噪声放大器设计。本文对文献［１］提出的Ｅｎ－Ｉｎ噪声模型作了改进，使其不仅适用于高频、窄带，而且也适用于低频、宽带放大器的低噪声设计。进而推导出放大器Ｅｎ－Ｉｎ噪声模型与Ｒｎ－Ｇｎ噪声模型的等价关系，给出放大器Ｅｎ－Ｉｎ噪声模型的测量方法及实测结果。     

锥形阀压电薄膜泵的初步研究

提出一种适应高频工作状态的压电薄膜泵结构，实步分析了所采用的锥形阀的工作原理与作用，设计了试验泵结构，加工了样机，通过试验证明了锥形阀的有效性，为进一步的研究打下了基础。     

Determination of material parameters from regions close to the collector using electron beam-induced current

The conventional method of extracting the minority carrier diffusion length using the electron beam-induced current (EBIC) technique requires that the electron beam be placed at region more than two diffusion lengths away from the collector. The EBIC signals obtained under this condition usually has low signal to noise ratio. In addition, the true diffusion length of the sample is initially unknown and hence it is difficult to estimate how close the beam can be placed from the collector. To overcome all these difficulties, a new method of extracting minority carrier diffusion length from the EBIC signal is proposed. It is shown that this method can be applied to EBIC signals obtained from regions close to the collector. It is also shown that the surface recombination velocity of the sample can also be obtained using this method. This theory is verified using EBIC data generated from a device simulation software.     

智能同步广播激励器及其标频

使用智能同步广播激励器,并采用CCTV传输的1MHz标频信号,就有可能实现自适应相位跟踪同步广播。这将大大节省中波段的频率资源。     

钕玻璃激光放大器反转粒子数的荧光测定法

本文报道了通过测量钕玻璃激光放大器在一定泵浦功率下的荧光波形的方法,获得放大器中反转粒子数密度随时间的变化关系,进而得到反转粒子数密度达到最大值的时刻的测定方法及实验结果。     

EDGE技术的测试和研究

对EDGE技术进行了介绍，并对EDGE技术的现网测试进行了说明，对于EDGE技术的功能特点及现网应用的模型、性能指标进行了研究和探讨。     

Image estimation using fast modified reduced update Kalman filter

The authors have proposed some modifications of the reduced update Kalman filter (RUKF) as applied to filtering of images corrupted by additive noise. They have reduced the computational complexity by reducing the state dimensionality. By doing so, it is shown that the computational requirement is reduced by an order of magnitude while the loss of performance is only marginal. Next, the RUKF is modified using the score function based approach to accommodate non-Gaussian noise. The image is modeled as a nonstationary mean and stationary variance autoregressive Gaussian process. It is shown that the stationary variance assumption is reasonable if the nonstationary mean is computed by an edge and detail preserving efficient estimator of local nonstationary mean. Such an estimator, called the hybrid multistage medium D (HMSMD) filter, is also described. Detailed experimental results are provided which indicate the success of the new filtering scheme     

Modeling lossy anisotropic dielectric waveguides with the method oflines

This paper presents a new formulation useful for modeling waveguides constructed from lossy inhomogeneous anisotropic media. Our approach is based on a pair of Sturm-Liouville type wave equations that have been derived to handle inhomogeneous, diagonalized complex permittivity and permeability tensors. The method of lines is then applied to these wave equations, and related field equations, creating an indirect eigenvalue problem that correctly models this class of structure. Some refinements to the method of lines are also proposed, particularly, regarding the construction of the modal matrices found in the eigenvalue problem. Using our approach, modal dispersion curves have been computed for millimeter-wave and optical structures. Comparisons made with results available from the literature validate our approach     

A CMOS ratio-independent and gain-insensitive algorithmicanalog-to-digital converter

This paper describes the design of a CMOS capacitor-ratio-independent and gain-insensitive algorithmic analog-to-digital (A/D) converter. Using the fully differential switched-capacitor technique, the A/D converter is insensitive to capacitor-ratio accuracy as well as finite gain and offset voltage of operational amplifiers. The switch-induced error voltage becomes the only major error source, which is further suppressed by the fully differential structure. The proposed A/D converter is designed and fabricated by 0.8 μm double-poly double-metal CMOS technology. The op-amp gain is only 60 dB and no special layout care is done for capacitor matching. Experimental results have shown that 14-b resolution at the sampling frequency of 10 kHz can be achieved in the fabricated A/D converter. Thus it can be used in the applications which require low-cost high-resolution A/D conversion     

Erratum: Preparation of size‐controlled In2O3 nanoparticles

The article referenced above was first published online on 7 August 2007 with incorrect pagination; the pagination has now been corrected online and in print. Copyright © 2007 John Wiley & Sons, Ltd.