三维光晶格中玻色凝聚气体基态波函数及干涉演化

基于Gross-Pitaevskii方程，运用有效化学势概念，研究了囚禁在组合势(由磁阱和三维光 晶格组成)中玻色凝聚气体在三维光晶格中的分布规律，并由此得到玻色凝聚气体的归 一化基态波函数.在取消组合势和仅取消光晶格而保留磁阱的两种情况下，运用传播子方 法求解出玻色凝聚气体密度分布的解析表达式.取消组合势后，理论计算所得到的玻色凝聚 气体聚随时间的演化规律与Greiner等的实验结果相一致.仅取消光晶格而保留磁阱时，研 究表明玻色凝聚气体的干涉模式呈现周期性的振荡行为.此外，在磁阱为各向异性的情况下 ， 关键词： 玻色凝聚气体 磁阱 光晶格 干涉模式     

交通灯控制下城市主干道双车道多速元胞自动机交通流模型研究

提出一个城市主干道双车道多速元胞自动机交通流模型，此模型采用开放性 边界条件，在考虑诸多实际因素影响情况下，研究了主干道中车站的设置、交通灯绿信比对 车流量和车流速度的影响.计算机模拟所得到的基本图（流量 速度图）能较好地反映在交 通灯控制下城市主干道交通流真实状况. 关键词： 元胞自动机模型 交通流 主干道     

磁性Salisbury屏的高频响应

研究了利用磁性薄膜构造Salisbury屏的可能性及其在微波频段的反射率频率特性.结果表明，利用铁磁性材料在铁磁共振频率附近磁化率具有χ″>χ′的特性，可以构造出对电磁波有良好吸收性能的磁性Salisbury屏.通过对铁磁材料高频磁谱物理机理的分析后指出，具有弛豫型共振磁谱的铁磁材料可以构造出薄膜型Salisbury屏，其厚度为微米甚至亚微米量级.反射率的频率特性与磁性材料的特征阻抗z-r有关，它取决于铁磁共振频率和静态磁化率.反射率的频率响应显示磁性薄膜Salisbury屏具有较宽的吸收带宽. 关键词： 磁性Salisbury屏 反射率 频带响应 磁性薄膜     

多壁碳纳米管膜湿敏特性的研究

研究了多壁碳纳米管(MWNTs)薄膜的湿敏特性，实验所用的多壁碳纳米管是用热灯丝化学气相沉积法(CVD)合成的.分别对未修饰和修饰的多壁碳纳米管膜温度和湿度特性进行研究后发现，修饰的多壁碳纳米管对温度和湿度非常敏感，且对湿度的响应时间和恢复时间短，重复性好.而未修饰的多壁碳纳米管对温度和湿度不太敏感.对修饰多壁碳纳米管的湿敏特性进行了理论分析，给出了其理论表示式. 关键词： 多壁碳纳米管 化学修饰 湿敏特性 物理吸附     

掺杂偶氮苯聚合物光致异构Z扫描测量及其理论解释

用He_Ne激光对掺有偶氮苯聚合物DR 13的PMMA薄膜样品进行Z扫描研究 ,发现其折射率改变量与光强的关系存在着饱和效应 ,且线偏振光引起的折射率改变明显大于圆偏振光引起的折射率改变 .对于这些现象 ,用光致异构的角烧孔机理进行解释     

一种新的永久周期磁铁聚焦的高功率宽带放大器

 提出了一种新的高功率宽带放大器，它由速调管和自由电子脉塞组成，用永久周期磁铁聚焦。研究了这种器件的电子束聚焦、群聚和辐射。在速调管提供一阶调制系数为30%，波导管的半径1.51cm，摇摆器的磁场振幅0.16T，周期7.92cm，电子束的电压490kV，电流50A和半径0.368cm的条件下，预估这种器件的辐射波频率为11.4GHz，输出辐射功率为18MW，输出辐射带宽为44%。     

Ceramic Films via Organometallic Complex as Single Source Precursor

Fe2(CO)6(μ-S2) was used as a single source precursor in attempt to produce FeS film via MOCVD. Pyrolysis of Fe2(CO)6(μ-S2) at temperature below 500℃ produced Fe1-xS or Fe7S8 powder as indicated by its powder X-ray spectra. At 750 ℃, polycrystalline FeS powder was obtained. In film deposition, polycrystalline Fe1-xS or Fe7Ss films were obtained on Si(100) and Ag/Si(100) substrates below 500 ℃. SEM micrographs showed the film on Si(100) substrate containing whisker like grains. However, pillar like grains were obtained on Ag/Si(100) substrate.Deposition rates are also different for different substrates as evaluated by the thickness of the films, which were obtained by SEM micrographs of the cross section of the films. At 750℃, similar polycrystalline Fe1-xS or Fe7S8 film was obtained.     

Synthesis of 5,6-Dihydro-OSW-1 and Its Antitumor Activities

5,6-Dihydro-OSW-1 (1) was synthesized following our previous procedure for the total synthesis of OSW-1. This compound demonstrated slightly stronger potency than that of OSW-1 against the growth of cancer cells.     

Boundedness of Multilinear Operators on Herz Type Spaces： Extreme Cases

In this paper, two classes of closely related multilinear singular and fractional integrals,which include the commutators as special cases, are studied and their boundedness on Herz type spaces is discussed. In fact, it is proved that these operators are actually not bounded in certain extreme cases.     

Efficiency improvement in charge pump circuits

Conventional charge pump circuits use a fixed switching frequency that leads to power efficiency degradation for loading less than the rated loading. This paper proposes a level shifter design that also functions as a frequency converter to automatically vary the switching frequency of a dual charge pump circuit according to the loading. The switching frequency is designed to be 25 kHz with 12 mA loading on both inverting and noninverting outputs. The switching frequency is automatically reduced when loading is lighter to improve the power efficiency. The frequency tuning range of this circuit is designed to be from 100 Hz to 25 kHz. A start-up circuit is included to ensure proper pumping action and avoid latch-up during power-up. A slow turn-on, fast turn-off driving scheme is used in the clock buffer to reduce power dissipation. The new dual charge pump circuit was fabricated in a 3-μm p-well double-poly single-metal CMOS technology with breakdown voltage of 18 V, the die size is 4.7×4.5 mm². For comparison, a charge pump circuit with conventional level shifter and clock buffer was also fabricated. The measured results show that the new charge pump has two advantages: (1) the power dissipation of the charge pump is improved by a factor of 32 at no load and by 2% at rated loading of 500 Ω and (2) the breakdown voltage requirement is reduced from 19.2 to 17 V