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201.
A new laser transfer process is reported which allows damage-free transfer of ferroelectric thin films from a growth substrate directly to a target substrate. The thin film ferroelectric material is deposited on a fused silica growth substrate with a sacrificial release layer of ITO (indium tin oxide). Regions of the film that are to be transferred are then selectively metallised, and bonded to the target substrate. Separation from the growth substrate is achieved by laser ablation of the ITO release layer by a single pulse from a KrF excimer laser, with the laser light being incident through the growth substrate. The residual ITO on the transferred ferroelectric layer is electrically conducting, and may be suitable for incorporation into the final device, depending on the application. The new process has been demonstrated for 500 nm-thick layers of sol-gel PZT which were thermosonically bonded to a silicon target substrate prior to laser release. The transferred films show ferroelectric behaviour and have a slightly reduced permittivity compared to the as-deposited material.  相似文献   
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The synthesis of alkyl-substituted 2-pyrrolecarboxylate esters has been accomplished by the condensation reaction of a symmetrical vinamidinium salt and glycine ester derivatives.  相似文献   
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Laser trapping in cell biology   总被引:2,自引:0,他引:2  
Optical traps offer the promise of being used as noninvasive micromanipulators for biological objects. An analytical model was developed that accurately describes the forces exerted on dielectric microspheres while in a single-beam gradient force optical trap. The model can be extended to the trapping of biological objects. The model predicts the existence of a stable trapping point and effective trapping range. A minimum trapping power of ~5 mW and an effective trapping range of 2.4 μm were measured for 10-μm-diameter dielectric microspheres and are in reasonable agreement with expected results. In cell biology, the optical trap was used to alter the movement of chromosomes within mitotic cells in vitro and to hold motile sperm cells. Results for the mitotic cells indicate that chromosome movement was initiated in the direction opposite to that of the applied force  相似文献   
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Si sviluppano rappresentazioni di forme bilineari e sesquilineari tramite somme di prodotti di funzionali per una classe ampia di spazi di Banach, che include algebre di operatori e tripleJ B *.  相似文献   
208.
The expectation that the hydroxyl analogue state of positive muons implanted in quartz should be stabilized by a suitable charge compensation centre is supported by preliminary data. The diamagnetic fraction correlates with aluminium content over the narrow range investigated. This revised version was published online in August 2006 with corrections to the Cover Date.  相似文献   
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High-energy transmission x-ray diffraction techniques have been applied to investigate the crystal quality of CdZnTe (CZT). CdZnTe has shown excellent performance in hard x-ray and gamma detection; unfortunately, bulk nonuniformities still limit spectroscopic properties of CZT detectors. Collimated high-energy x-rays, produced by a superconducting wiggler at the National Synchrotron Light Source’s X17B1 beamline, allow for a nondestructive characterization of thick CZT samples (2–3 mm). In order to have complete information about the defect distribution and strains in the crystals, two series of experiments have been performed. First, a monochromatic 67 keV x-ray beam with the size of 300×300 μm2 was used to measure the rocking curves of CZT crystals supplied by different material growers. A raster scan of a few square centimeter area allowed us to measure the full-width at half-maximum (FWHM) and shift in the peak position across the crystal. The rocking curve peak position and its FWHM can be correlated with local stoichiometry variations and other local defects. Typically, the FWHM values ranging from 8.3 arcsec to 14.7 arcsec were measured with the best crystal used in these measurements. Second, transmission white beam x-ray topography (WBXT) was performed by using a 22 mm×200 μm beam in the energy range of 50 keV to 200 keV. These types of measurements allowed for large area, high-resolution (50 μm) scans of the samples. Usually, this technique is used to visualize growth and process-induced defects, such as dislocations, twins, domains, inclusions, etc. the difference in contrast shows different parts of the crystal that could not be shown otherwise. In topography, good contrast is indicative of a high quality of the sample, while blurred gray shows the presence of defects. Correlation with other techniques (e.g., infrared (IR) mapping and gamma mapping) was also attempted. Our characterization techniques, which use highly penetrating x-rays, are valid for in-situ measurements, even after electrical contacts have been formed on the crystal in a working device. Thus, these studies may lead to understanding the effects of the defects on the device performance and ultimately to improving the quality of CZT material required for device fabrication. It is important to study crystals from different ingot positions (bottom, center, and top); consequently, more systematic studies involving scans from center to border are planned.  相似文献   
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