Novel level-identifying circuit for flash multilevel memories

This paper presents a high-speed, small-area circuit specifically designed to identify the levels in the read out operation of a flash multilevel memory. The circuit is based on the analog computation of the Euclidean distance between the current read out from a memory cell and the reference currents that represent the different logic levels. An experimental version of the circuit has been integrated in a standard double-metal 0.7-μm CMOS process with a die area of only 140×100 μm². Operating under a 5-V power supply, this circuit identifies the read-out current of a memory cell, and associates it with the appropriate logic level in 9 ns     

An easy-to-use mismatch model for the MOS transistor

In this paper, a physics-based mismatch model is presented. It is demonstrated on a 0.18-/spl mu/m technology that a simple mismatch model can still be used to characterize deep-submicron technologies. The accuracy of the model is examined and found to be within 20% in the strong inversion region. Bulk bias dependence is modeled in a physical way. To extract the mismatch parameters, a weighted fit is introduced. It is shown that the width and length dependence of the mismatch parameters is given by the Pelgrom model.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

On the hot-carrier-induced post-stress interface trap generation inn-channel MOS transistors

A continued fast interface trap generation is observed in n-channel MOS transistors after termination of the hot-carrier stress. The magnitude of this post-stress effect is strongly dependent on the conditions of the preceding stress, on the post-stress conditions and on the process parameters. For measurements at 293 K, a simple model is proposed which is based on the release of hydrogen by the thermal detrapping of holes, and which can explain the observed dependencies. The importance of the post-stress D_it-generation is illustrated for the case of dynamic stress conditions where it can lead to an apparently deviating degradation behavior     

Percolation techniques in disordered spin flip dynamics: Relation to the unique invariant measure

We consider lattice spin systems with short range but random and unbounded interactions. We give criteria for ergodicity of spin flip dynamics and estimate the speed of convergence to the unique invariant measure. We find for this convergence a stretched exponential in time for a class of directed dynamics (such as in the disordered Toom or Stavskaya model). For the general case, we show that the relaxation is faster than any power in time. No assumptions of reversibility are made. The methods are based on relating the problem to an oriented percolation problem (contact process) and (for the general case) using a slightly modified version of the multiscale analysis of e.g. Klein (1993).     

Design rules for an integratable low-power amplifier/filter combination

In this paper design rules for a circuit topology in which there is an inseparable combination of an amplifier and a filter characteristic, are presented. By intentionally using the capacitance of an already present input sensor for the filtering, the total required integrated capacitance is much less than that in circuits, which have a separately designed amplifier and filter function. Consequently, it is possible to have the advantage of a better integratability. Moreover, less complexity in the design is achieved. The presented circuit shows a current-to-voltage conversion and an inherently controllable second-order low-pass filter characteristic. A discrete realization has been designed to test the circuit. This circuit operates down to a 1 V supply voltage and the transfer shows a 1.8 M currentto-voltage conversion with a bandwidth of 6 kHz. Measurement results of this circuit show that a 63 dB dynamic range can be achieved with a total required integrated capacitance of only 31 pF.     

Matrix-isolation FT-IR and DFT theoretical studies of the intramolecular hydrogen bonding in Mannich bases

FT-IR Ar-matrix isolated spectra were studied for dichloro- (Cl₂-MB) and tetrachloroderivatives (Cl₄-MB) of the ortho Mannich base. The spectra were analyzed based on the DFT calculated frequencies and intensities and compared with those recorded in CCl₄ solution in the region of the ν(OH) and ν(OD) vibrations. The matrix-isolated spectra are characterized by narrower ν(OH) and ν(OD) bands with much better resolved fine structure than in solution. The fine structure originates from the anharmonic coupling with the low frequency modes as well as from Fermi resonance. The ν(OD) band shapes can be reproduced exclusively by assuming the Fermi resonance with overtones and summation of the frequencies of modes into which the bridge atoms are involved. The frequency isotopic ratio (ISR) is for both compounds 1.33 while the half-width ratios are equal to 1.82 and 1.94, for Cl₂-MB and Cl₄-MB, respectively.     

Curing of a maleimide model compound

A monofunctional maleimide-ended model compound was synthesized and purified. The thermal curing of this compound was followed by size exclusion chromatography and the molecular masses of the oligomers formed during the curing reaction were determined by mass spectroscopy. It was found that high molecular mass species were not thermally stable. At high temperature and after enough time, a strong decrease in the polydispersity of the oligomers and a significantly preferential formation of trimer were observed. From ¹³C-NMR characterization, a five membered ring structure was found for the trimer, which explains the thermal stability of this species. © 1995 John Wiley & Sons, Inc.     

Base Metal Catalyzed Isocyanide Insertions

Isocyanides are diverse C₁ building blocks considering their potential to react with nucleophiles, electrophiles, and radicals. Therefore, perhaps not surprisingly, isocyanides are highly valuable as inputs for multicomponent reactions (MCRs) and other one‐pot cascade processes. In the field of organometallic chemistry, isocyanides typically serve as ligands for transition metals. The coordination of isocyanides to metal centers alters the electronic distribution of the isocyano moiety, and reaction pathways can therefore be accessed that are not possible in the absence of the metal. The tunable reactivity of the isocyanide functional group by transition metals has evolved into numerous useful applications. Especially palladium‐catalyzed isocyanide insertion processes have emerged as powerful reactions in the past decade. However, reports on the use of earth‐abundant and cheap base metals in these types of transformations are scarce and have received far less attention. In this Minireview, we focus on these emerging base metal catalyzed reactions and highlight their potential in synthetic organic chemistry. Although mechanistic studies are still scarce, we discuss distinct proposed catalytic cycles and categorize the literature according to 1) the (hetero)atom bound to and 2) the type of bonding with the transition metal in which the (formal) insertion occurs.     

Implementation of a separate fluid-neutral energy equation in SOLPS-ITER and its impact on the validity range of advanced fluid-neutral models

In plasma edge transport codes for nuclear fusion devices, fluid-neutral models offer an interesting alternative to the currently used kinetic Monte Carlo simulations, especially for cases of high ion-neutral collisionality. In this paper, we elaborate a separate neutral energy equation in the state-of-the-art SOLPS-ITER code suite, which previously assumed perfect ion-neutral temperature equilibration. Furthermore, we study the coupled plasma-neutral solutions for a range of divertor operating regimes, proving the validity of these fluid-neutral models for high-recycling and detached regimes.