Effective Reduction of Horizontal Error in Laser Scanning Information by Strip‐Wise Least Squares Adjustments

Though the airborne laser scanning (ALS) technique is becoming more popular in many applications, horizontal accuracy of points scanned by the ALS is not yet satisfactory when compared with the accuracy achieved for vertical positions. One of the major reasons is the drift that occurs in the inertial measurement unit (IMU) during the scanning. This paper presents an algorithm that adjusts for the error that is introduced mainly by the drift of the IMU that renders systematic differences between strips on the same area. For this, we set up an observation equation for strip‐wise adjustments and completed it with tie point and control point coordinates derived from the scanned strips and information from aerial photos. To effectively capture the tie points, we developed a set of procedures that constructs a digital surface model (DSM) with breaklines and then performed feature‐based matching on strips resulting in a set of reliable tie points. Solving the observation equations by the least squares method produced a set of affine transformation equations with 6 parameters that we used to transform the strips for adjusting the horizontal error. Experimental results after evaluation of the accuracy showed a root mean squared error (RMSE) of the adjusted strip points of 0.27 m, which is significant considering the RMSE before adjustment was 0.77 m.     

A One‐Kilobit PQR‐CMOS Smart Pixel Array

The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and √T‐dependent thermal red shifts. We observed uniform bottom emissions from a 1‐kb smart pixel chip of a 32×32 InGaAs PQR laser array flip‐chip bonded to a 0.35 µm CMOS‐based PQR laser driver. The PQR‐CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.     

A fiber depolarizer using polarization beam splitter loop structure for narrow linewidth light source

A new fiber depolarizer employing a polarization beam splitter loop structure is proposed and demonstrated. The depolarizer is devised for broad-band operation and the depolarization of narrow linewidth light source without any help of polarization controllers or Faraday rotator mirrors. A polarizing method is developed that shows good performance without polarization control unit. Therefore, the proposed depolarizer can be cost-effective and easily configured. From experiments, low output degree of polarization less than 10% is obtained for a narrow linewidth light source.     

Towards understanding the increase in strength of thermotropic polyesters with heat treatment

Thermotropic copolyester fibers of oxynaphthoate and oxybenzoate have been subjected to conditions that promote solid-state polymerization as well as annealing. The annealing process causes the crystals to perfect with a simultaneous increase in heat of fusion and melting temperature. Solid-state polymerization, a reaction rate-controlled process, causes the polymer viscosity average molecular weight to increase by chain extension from about 14,000 g/mole to more than 87,000 g/mole with a simultaneous impressive increase in tenacity from about 10 g/d (1.2 GPa) to almost 30 g/d (3.7 GPa). To understand the changes in mechanical properties, we have modeled the fiber structure as short rod-like molecules poorly bonded to a continuous matrix of parallel molecules. Lengthening of the reinforcing molecules facilitates better transfer of load from matrix to molecules, resulting in higher tenacity fibers. © 1994 John Wiley & Sons, Inc.     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

Computational Implementation of Asymmetric Integral Imaging by Use of Two Crossed Lenticular Sheets

We propose an asymmetric integral imaging method to adjust the resolution and depth of a three‐dimensional image. Our method is obtained by use of two lenticular sheets with different pitches fabricated under the same F/#. The asymmetric integral imaging is the generalized version of integral imaging, including both conventional integral imaging and one‐dimensional integral imaging. We present experimental results to test and verify the performance of our method computationally.     

A Silicon–Silica Nanocomposite Material

The synthesis and characterization of a novel silicon–silica nanocomposite material are reported. A self‐assembly method allows the encapsulation of silicon nanoclusters within the channels of a periodic mesoporous silica thin film. The result is the formation of a silicon–silica nanocomposite film with bright, room‐temperature photoluminescence in the visible range, and a nanosecond luminescence lifetime. The properties of the nanocomposite material have been studied by several analytical techniques, which collectively show the existence within the channels of non‐diamondoid‐structure‐type silicon nanoclusters with various hydrogenated silicon sites. It is estimated that the silicon nanoclusters in the silica mesoporous films occupy up to 39 % of the accessible pore volume. The nanocomposite film shows improved resistance to air oxidation compared to crystalline silicon. The high loading and chemical stability to oxidation under ambient conditions are important advantages in terms of the development of silicon‐based light‐emitting diodes from this class of materials.     

Analysis of an antijam FH acquisition scheme

An easily implemented matched filter scheme for acquiring hopping code synchronization of incoming frequency-hopping (FH) signals is analyzed, and its performance is evaluated for two types of jamming: partial-band noise jamming and partial-band multitone jamming. The system is designed to reduce jammer-induced false alarms. The system's matched filter output is compared to an adaptive threshold that is derived from a measurement of the number of acquisition channels being jammed. Example performance calculations are given for the frequency coverage of the jamming either fixed over the entire acquisition period or hopped, that is, changed for each acquisition pulse. It is shown that the jammer's optimum strategy (the worst case) is to maximize the false alarm probability without regard for the effect on detection probability, for both partial-band noise and multitone jamming. It is also shown that a significantly lower probability of false acquisition results from using an adaptive matched filter threshold, demonstrating that the strategy studied here is superior to conventional nonadaptive threshold schemes     

Electrical and optical feedback in an InGaAs/InP light-amplifyingoptical switch (LAOS)

A circuit model for optical and electrical feedback has been developed to investigate the cause of negative differential resistance (NDR) switching in a series connected heterojunction phototransistor (HPT) light-emitting diode (LED) device. The model considers optical feedback from the light generated in the LED, electrical feedback from the holes thermally emitted over the LED cladding layer, nonlinear gain of the HPT, the Early effect, and leakage resistance. The analysis shows that either electrical or optical feedback can be the dominant cause for the NDR, depending upon their relative strengths. The NDR observed in the devices was caused primarily by electrical feedback since the optical feedback is weak. For low input power, avalanche breakdown appears to initiate the NDR in the devices although avalanching alone cannot cause NDR