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The ability of Soave–Redlich–Kwong cubic equation of state (SRK EoS) to predict densities and thermodynamic derivative properties such as thermal expansivity, isothermal compressibility, calorific capacity, and Joule–Thompson coefficients, for two gas condensates over a wide range of pressures (up to 110 MPa) was studied. The predictions of the EoS were compared to Monte Carlo simulation data obtained by Lagache et al. [M.H. Lagache, P. Ungerer, A. Boutin, Fluid Phase Equilibr. 220 (2004) 221]. Two completely different alpha functions for the SRK EoS attractive term were used and their respective effects on the predictions of such properties were analyzed. Also, two different forms of the crossed terms of the attractive parameter, aij, and three expressions of the crossed terms of the repulsive parameter, bij, were combined in different ways, and predictions were carried out. Little sensitivity of the properties on the chosen alpha function, except for the calorific capacities, was found in the systems studied. The most commonly used combination rules to model phase behavior of reservoir fluids, i.e. geometric and arithmetic forms of aij and bij, respectively, predicted very deficient results for these fluids at extreme conditions, specially for density calculations.  相似文献   
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从消费电子市场最容易得到的经验是集成为王。移动型战胜便携型,掌上型战胜移动型,而衬衫口袋型又超过掌上型。即使像游戏机这类桌面设备,时髦的外形和低制造成本目标也要靠更高集成度才能实现。这一趋势并不限于低成本的消费电子产品。军用、汽  相似文献   
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We present a scheme for employing a violet extended-cavity diode laser in experiments with single, trapped ions. For this the grating-stabilised laser is spatially and spectrally filtered and referenced to a Fabry–Pérot cavity. We measure an upper limit to the line width by observing a 305-kHz FWHM beat note with the second harmonic of a titanium sapphire laser. The laser is subsequently used to optically cool a single 40Ca+ ion close to the Doppler limit. PACS 03.67.Lx; 32.80.Pj; 42.55.Px  相似文献   
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The authors report on the fabrication and characteristics of a unipolar, three-terminal, resonant-tunneling transistor. The operating principle of this new transistor is based on the fact that the quantum mechanical resonant-tunneling probability of hot electrons between the emitter and the collector is switched almost completely on and off, when either the base or the collector bias is swept. The emitter injects hot electrons to the second lowest subband of a thin (100 Å in this work) GaAs quantum well. Subsequently, the hot electrons will either resonantly tunnel to the collector, or relax to the lowest subband and contribute to the base current. As a result of resonant transmission, at 77 K the current-voltage characteristics of the transistor display negative differential resistance with extremely large (4691) peak-to-valley ratio. Furthermore, when biased near resonance, a maximum DC current gain of ~1.2 and a maximum AC current gain of ~11.9 were observed. The first use of a new `tunneling-in and tunneling-out' scheme in contacting a thin quantum well is also demonstrated  相似文献   
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