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51.
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53.
应用TGT法生长了直径为75mm的U:CaF2晶体,宏观上透明完整.应用公式K0=Cs/Cl计算了U在CaF2晶体中的分凝系数等于0.53.应用溶质分布一般公式Cs=K0C0(1-g)K0-1,计算U的浓度分布与测量值,数值符合说明晶体生长过程接近平衡状态.分析不同条件下生长的U: CaF2晶体的晶胞参数和吸收光谱,结果表明生长气氛决定U的价态及电荷补偿机理:无PbF2存在的条件下,U为+4价,晶体呈绿色;PbF2的加入起到氟化去氧作用,U倾向于以离子半径最接近于Ca2+的U3+存在,晶体呈红色.从晶体生长开始到结束的部位,U3+:CaF2晶体吸收光谱的峰位不变,峰强呈现与U浓度相同的增加趋势.U3+:CaF2晶体外层厚约5mm处呈黄色,含有U3+和U2+的混合价态离子,其原理是石墨坩埚的还原作用通过单质铅,使部分的U3+进一步还原成了U2+.
关键词:
铀
氟化钙晶体
分凝系数
晶胞参数 相似文献
54.
A (w,r) cover‐free family is a family of subsets of a finite set such that no intersection of w members of the family is covered by a union of r others. A (w,r) superimposed code is the incidence matrix of such a family. Such a family also arises in cryptography as the concept of key distribution pattern. In the present paper, we give some new results on superimposed codes. First we construct superimposed codes from super‐simple designs which give us results better than superimposed codes constructed by other known methods. Next we prove the uniqueness of the (1,2) superimposed code of size 9 × 12, the (2,2) superimposed code of size 14 × 8, and the (2,3) superimposed code of size 30 × 10. Finally, we improve numerical values of upper bounds for the asymptotic rate of some (w,r) superimposed codes. © 2004 Wiley Periodicals, Inc. 相似文献
55.
Han-Kyu Lim Deog Kyoon Jeong KyungTae Kim JunMo Park Han-gyoo Kim 《Communications Magazine, IEEE》2005,43(5):141-148
Network direct attached storage (NDAS) is a network storage architecture that allows direct attachment of existing ATA/ATAPI devices to Ethernet without a separate server. Unlike other architectures such as NAS, SAN, and USB mass storage, no server computer intervenes between the storage and the client hosts. We describe an NDAS disk controller (NDC) amenable to low-cost single-chip implementation that processes a simplified L3/L4 protocol and converts commands between ATA/ATAPI and Ethernet, while the remaining complex tasks are performed by remote hosts. Unlike NAS architectures that use TCP/IP, NDAS uses a TCP-like lean protocol that lends itself well to high-performance hardware realization. Thanks to the simple NDAS architecture and protocol, an NDC implemented on a single 4 mm /spl times/ 4 mm chip in 0.18 /spl mu/m CMOS technology achieves a maximum throughput of 55 Mbytes/s on gigabit Ethernet, which is comparable to that of a high-performance disk locally attached to a host computer. 相似文献
56.
Myungjin Jeon Dongsoong Han Kyeongsu Park Gundon Choi 《Journal of Applied Mathematics and Computing》2005,18(1-2):235-246
We present an interpolating, univariate subdivision scheme which preserves the discrete curvature and tangent direction at each step of subdivision. Since the polygon have a geometric information of some original (in some sense) curve as a discrete curvature, we can expect that the limit curve has the same curvature at each vertex as the control polygon. We estimate the curvature bound of odd vertices and give an error estimate for restoring a curve from sampled vertices on curves. 相似文献
57.
58.
Neodymium doped bismuth layer structure ferroelectrics (BLSFs) ceramics CaBi4−xNdxTi4O15 (x=0, 0.25, 0.50, 0.75) were prepared by solid-state reaction method. X-ray diffraction pattern showed that single phase was formed when x=0-0.75. The refined lattice parameters showed that a (b) axes decrease at x=0.25 and increase with more Nd3+ dopant. The effects of Nd3+ doping on the dielectric and ferroelectric properties of CaBi4Ti4O15 ceramics are studied. Nd3+ dopant decreased the Curie temperature linearly, and the dielectric loss, tan δ, as well. The remnant polarization of Nd3+ doped CaBi4Ti4O15 ceramics was increased by 80% at x=0.25, while more Nd3+ dopant decreased the remnant polarization. CaBi3.75Nd0.25Ti4O15 ceramics had the largest piezoelectric constant d33. The structure and properties of CaBi4−xNdxTi4O15 ceramics showed that Nd3+ may occupy different crystal locations when Nd3+ content x is less than 0.25 and more than 0.50. 相似文献
59.
Jeong Ryeol Choi 《International Journal of Theoretical Physics》2004,43(4):947-958
We derived the WKB wave function for the general time-dependent quadratic Hamiltonian system using a unitary transformation method. We applied our research to sinusodially drived Caldirola–Kanai oscillator and confirmed that the time evolution of our approximated WKB wave function is similar to that of the exact one. This wave function can be used to analyze the interference between the probability amplitudes contributed by the area of overlap in phase space of quantum states. 相似文献
60.
Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature
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Hydrogen-free silicon nitride (SiNx) films were deposited at room temperature by microwave electron cyclotron resonance (MW-ECR) plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm. 相似文献