Validation of 3-D curved objects: CAD model and fabricatedworkpiece

This paper proposes a new method to describe and identify a 3-D curved object for the purpose of validating a fabricated object to the design specification. Curved 3-D objects are, in general, difficult to represent and identify because they lack distinct properties such as edges, planes, or cylindrical surfaces which are the building blocks in representing objects. In this paper, the authors propose to use principal axes of a 3-D object to establish a reference for the representation. A method of obtaining an inertia matrix from a 3-D range image is developed. The unique set of principal axes is obtained from the inertia matrix of an object with an arbitrary 3-D position and orientation, and the object can be described uniquely on these principal axes. On the principal axes, an object is described by a set of features describing the shape of the object such as spine, section size, section orientation, and section contraction. The features are used for comparing two objects for the validation purpose. The authors also propose a direct measure of similarity between two objects as a mean-squared difference of radii. As an experiment, two 3-D object models are designed through a CAD package, and fabricated objects are compared with the designed models for validation purposes     

正负系数中立型差分方程的正解的存在性

In this paper the sufficient conditions for the existence of positive solutions of the neutral difference equations with positive and negative coefficients are established. The results improve some known conclusions in the literature     

基于矩的异分辨率图象边界检测

（１）本文引入仿射变换，提出了一种用矩算子以民分辨率图象直接进行边界检测的方法，利用同分辨率图象正方形窗口的模板行矩的计算，推导出了相应用的边界参数公式。（２）本文提出一种隐线笥插值矩计算方法，得到一组与正方形窗口对应的正方形模板，避免了费时的预插值过程，（３）对本文提出的方法进行了实验验证，并给出了实验结果。     

C~k连续的保形分段2k次多项式插值

1．引言在每个子区间上，通过插入至多一个内结点，Brodlie和Butt［1］给出了分段三次多项式保形插值算法，Randal［2］等讨论了分段五次多项式插值，作者［31讨论了一般分段奇次多项式的保形插值，并且给1了内结点的位置范围公式．这种插值方法完全解决了一般的分段奇次多项式的保形插值问题．关于分段偶次多项式的保形插值，大多数文献只讨论分段二次保形插值，这里要特别指出的是Shumake［4j导出了二次样条保凸的充要条件，并且给出了一个二次样条保形插值的方法．在每一个子区间上至多插入一个内结点，则一个二次插值样条就可得到．作…     

Reversible addition–fragmentation transfer (RAFT) copolymerization of methyl methacrylate and styrene in miniemulsion

In the reversible addition–fragmentation transfer (RAFT) copolymerization of two monomers, even with the simple terminal model, there are two kinds of macroradical and two kinds of polymeric RAFT agent with different R groups. Because the structure of the R group could exert a significant influence on the RAFT process, RAFT copolymerization may behave differently from RAFT homopolymerization. The RAFT copolymerization of methyl methacrylate (MMA) and styrene (St) in miniemulsion was investigated. The performance of the RAFT copolymerization of MMA/St in miniemulsion was found to be dependent on the feed monomer compositions. When St is dominant in the feed monomer composition, RAFT copolymerization is well controlled in the whole range of monomer conversion. However, when MMA is dominant, RAFT copolymerization may be, in some cases, out of control in the late stage of copolymerization, and characterized by a fast increase in the polydispersity index (PDI). The RAFT process was found to have little influence on composition evolution during copolymerization. The synthesis of the well‐defined gradient copolymers and poly[St‐b‐(St‐co‐MMA)] block copolymer by RAFT miniemulsion copolymerization was also demonstrated. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 6248–6258, 2004     

大规模集成电路浮栅ROM器件总剂量辐射效应

提出了一种大规模集成电路总剂量效应测试方法:在监测器件和电路功能参数的同时,监测器件功耗电流的变化情况,分析数据错误和器件功耗电流与辐射总剂量的关系.根据该方法利用60Co γ射线进行了浮栅ROM集成电路(AT29C256)总剂量辐照实验,研究了功耗电流和出错数量在不同γ射线剂量率辐照下的总剂量效应,以及参数失效与功能失效时间随辐射剂量率的变化关系,并利用外推实验技术预估了电路在空间低剂量率环境下的失效时间.     

High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (>1kV) and high dc current gain (/spl beta/=32) at a collector current level of I/sub c/=3.83A (J/sub c/=319 A/cm/sup 2/). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly improved blocking voltage. A specific on-resistance of 17 m/spl Omega//spl middot/cm/sup 2/ has been achieved for collector current densities up to 289 A/cm/sup 2/.     

Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers

Process technology of high-speed implant-apertured index-guide lateral-current-injection top dielectric-mirror quantum-well 850-nm vertical cavity surface-emitting lasers (VCSELs) has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, VCSEL resistance, and thermal analysis were investigated. Employing this technology, GaAs/AlGaAs-based 850-nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence of 2/sup 31/-1 were achieved. The bit-error rates were below 10/sup -13/. The threshold current is as low as 0.8 mA for 7-/spl mu/m-diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW were obtained.     

GENERALIZED SIMULTANEOUS CHEBYSHEV APPROXIMATION

In this note,we develop,without assuming the Haar condition,a generalized simultaneousChebyshev approximation theory which is similar to the classical Chebyshev theory and con-rains it as a special case.Our results also contain those in[1]and[3]as a special case,and thetwo conjectures proposed by C.B.Dunham in[2]are proved to be true in the case of simulta-neous approximation.     

Fuzzy集的基数

关于Fuzzy集的基数，[1]中曾对有限支集的Fuzzy集以及极苛刻条件下的无限Fuzzy集给出过一种定义。但是，正如本文将要指出的那样，该定义是不合理的。本文将从研究Fuzzy映射入手，给出Fuzzy集基数的一般性定义。基于这一定义，不但得到有关基数的大部分结论，而且有其自身的特殊性。