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31.
Multiuser detection for DS-CDMA UWB in the home environment   总被引:20,自引:0,他引:20  
We demonstrate the effectiveness of multiuser detection for an ultra-wideband (UWB) pulse based direct sequence spread spectrum system using code division multiple access. Extensive simulations were run using channel soundings of the 2-8 GHz band collected in a residential setting and characterized by a high level of multipath fragmentation. We show that the adaptive minimum mean square error (MMSE) multiuser detection (MUD) receivers are able to gather multipath energy and reject intersymbol and interchip interference for these channels to a much greater extent than RAKE receivers with 4 and 8 arms. We also demonstrate the adaptive MMSE is able to reject a narrowband IEEE 802.11a OFDM interferer, even for signal-to-interference ratio as severe as -30 dB. We show the adaptive MMSE exhibits only a 6 dB penalty relative to the single user case for the heavy multi-access interference (number of asynchronous users equal to spreading code length). The practical RAKE receivers were incapable of effectively rejecting either the strong narrowband interference or the heavily loaded wideband interference. Even more moderate levels of interference caused significant degradation in the performance of the practical RAKE receivers.  相似文献   
32.
第三代短波自动链路建立系统特性分析及仿真实现   总被引:2,自引:0,他引:2  
分析了第三代短波自动链路建立系统的工作特性及技术特点,并对系统仿真实现的原则及一些细节问题进行了较深入的探讨,同时对仿真实现中涉及的链路质量分析(LQA)算法进行了研究。  相似文献   
33.
A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm2. The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively  相似文献   
34.
A thermodynamic modeling of GaN was carried out to describe the thermodynamic behavior of native defects, dopants, and carriers (free electrons and holes) in GaN semiconductors. The compound energy model (CEM) was used. An unintentionally doped GaN was taken as an example. Oxygen was introduced into the model as the unintentionally doped impurity, according to the practical experimental phenomena. The energies of component compounds in the model were defined based on the results of the ab initio calculations and adjusted to fit experimental data. The thermodynamic properties of the defects and the oxygen doped were calculated to show the facility of the model.  相似文献   
35.
We describe an architecture for an optical local area network (LAN) or metropolitan area network (MAN) access. The architecture allows for bandwidth sharing within a wavelength and is robust to both link and node failures. The architecture can be utilized with an arbitrary, link-redundant mesh network (node-redundancy is necessary only to handle all node failures), and assumes neither the use of a star topology nor the ability to embed such a topology within the physical mesh. Reservation of, bandwidth is performed in a centralized fashion at a (replicated) head end node, simplifying the implementation of complex sharing policies relative to implementation on a distributed set of routers. Unlike a router, however, the head end does not take any action on individual packets and, in particular, does not buffer packets. The architecture thus avoids the difficulties of processing packets in the optical domain while allowing for packetized shared access of wavelengths. We describe the route construction scheme and prove its ability to recover from single link and single node failures, outline a flexible medium access protocol and discuss the implications for implementing specific policies, and propose a simple implementation of the recovery protocol in terms of state machines for per-link devices  相似文献   
36.
This paper presents the quantified study of the electromagnetic radiation mechanism of the 20-H rule using a numerical approach that has not yet been systematically addressed. The 20-H rule is a rule-of-thumb layout technique recommended to minimize radiated fields propagating from the edges of a printed circuit board (PCB) coupling onto nearby structures. Propagating electromagnetic fields may corrupt adjacent cable assemblies, sheet metal enclosures, and aperture openings. The magnitude of this design rule is investigated using the full-wave finite-difference time-domain (FDTD) method. An analysis on whether benefits exist from use of this rule is examined and under what conditions the rule is valid when correctly implemented. The purpose of this paper is to provide insight into the validity of the 20-H rule, recognizing that every PCB will have different simulation results. FDTD is used to capture a snapshot view of field propagation. This view allows one to determine the validity of the 20-H rule at a single point of time within a dynamic structure and what may be expected when digital components are finally added to a PCB assembly, which generally negates simulated results.  相似文献   
37.
In this paper, RF noise in 0.18-mum NMOSFETs concerning the contribution of carrier heating and hot carrier effect is characterized and analyzed in detail via a novel approach that modulates the channel carrier heating and number of hot carriers using body bias. We confirm qualitatively a negligible role of hot carrier effect on the channel noise in deep-submicrometer MOSFETs. For a device under reverse body bias (Vb), even though the increase in hot carrier population is clearly characterized by dc measurements, the device high-frequency noise is found to be irrelevant to the increase in the channel hot carriers. Experimental results show that the high-frequency noise is slightly reduced with the increase in |Vb|, and can be qualitatively explained by secondary effects such as the suppression of nonequilibrium channel noise and substrate induced noise. The reduction of NFmin and Rn with the increase in |Vb| may provide a possible methodology to finely adjust the device high-frequency noise performance for circuit design  相似文献   
38.
To further evaluate the causality between endogenous pyrogen (EP)-induced fever and cyclic adenosine-3',5'-monophosphate (cyclic AMP) level, the effects of sodium salicylate (SS) on the febrile response and increased levels of cyclic AMP in both cerebrospinal fluid (c.s.f.) and plasma during EP-induced fever in rabbits were observed. The results suggest that cyclic AMP is probably involved in the central mediation of EP-induced fever and that increased concentration of cyclic AMP in c.s.f. associated with EP-induced fever is not the result of temperature elevation but appears to be caused by the increased synthesis in the central nervous system. In addition it is confirmed that blood is impossibly a contributory source of increased cyclic AMP in c.s.f. during EP fever, and that SS may act subsequent to the increase in cyclic AMP.  相似文献   
39.
We derive the outage capacity region of an M-user fading multiple-access channel (MAC) under the assumption that both the transmitters and the receiver have perfect channel side information (CSI). The outage capacity region is implicitly obtained by deriving the outage probability region for a given rate vector. Given a required rate and average power constraint for each user, we find a successive decoding strategy and a power allocation policy that achieves points on the boundary of the outage probability region. We discuss the scenario where an outage must be declared simultaneously for all users (common outage) and when outages can be declared individually (individual outage) for each user.  相似文献   
40.
A rearrangeable nonblocking 4/spl times/4 thermooptic silicon-on-insulator waveguide switch matrix at 1.55-/spl mu/m integrated spot size converters is designed and fabricated for the first time. The insertion losses and polarization-dependent losses of the four channels are less than 10 and 0.8 dB, respectively. The extinction ratios are larger than 20 dB. The response times are 4.6 /spl mu/s for rising edge and 1.9 /spl mu/s for falling edge.  相似文献   
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