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201.
LiAlO2 single crvstals doped with Ti at concentration 0.2at.% are grown by the Czochralskl technique with dimensions φ42×55mm. Ti ions in the crystal are quadrivalence proven by comparing the absorption and fluorescence spectra of pure LiAlO2 and Ti: LiAlO2. After air and Li-rich atmosphere annealing, the absorption peaks in the range of 600-800nm disappear. We conclude that 682 and 756nm absorption peaks are attributed to the VLi and Vo absorptions, respectively: The peaks at 716nm and 798nm may stem from the VLi^+ and absorptions. The colour-centre model can be applied to explain the experimental phenomena. Ti^4+-doping produces more lithium vacancies in the LiAlO2 crystal. The intensities of [LiO4] and the associated bonds remain unchanged, which improves the anti-hydrolyzation and thermal stability of LiAlO2 crystals. 相似文献
202.
Let f be a smooth map between unit spheres of possibly different dimensions. We prove the global existence and convergence of the mean curvature flow of the graph of f under various conditions. A corollary is that any area‐decreasing map between unit spheres (of possibly different dimensions) is isotopic to a constant map. © 2004 Wiley Periodicals, Inc. 相似文献
203.
本文提出了一种针对木马的静态信息进行分析的新的检测机制,建立了基于BP神经网络的数据处理模型。PE文件是Windows平台下的可执行文件,也是木马等后门程序的主要载体, 由于PE文件的结构复杂、灵活,而BP神经网络摸型的自身要求,导致数据的建摸过程遇到两个难点,本文首先引入了变化粒度的概念,解决了输入端非线性数据的问题。同时,也解决了将PE文件中大量的字符串归一化(0,1)区间)的问题,最终建立了一套较为理想的解决方案,取得了较为理想的测试数据。 相似文献
204.
Zhongde Wang Jullien G.A. Miller W.C. Jinghong Wang Bizzan S.S. 《Solid-State Circuits, IEEE Journal of》1997,32(2):206-214
Using an enhanced multiple output domino logic (EMODL) implementation of a carry lookahead adder (CLA), sums of several consecutive bits can be built in one nFET tree with a single carry-in. Based on this result, a new sparse carry chain architecture is proposed for the CLA adder. We demonstrate the design approach using a 32-b adder, and show that only four carries are sufficient for generating all sums, with a consequent reduction in the number of stage delays. Using a 1.2-μm CMOS technology, we verify our simulation procedures by fabrication and measurement of a 2.7 ns critical path 相似文献
205.
Matrix extensions and eigenvalue completions, the generic case 总被引:2,自引:0,他引:2
William Helton Joachim Rosenthal Xiaochang Wang 《Transactions of the American Mathematical Society》1997,349(8):3401-3408
In this paper we provide new necessary and sufficient conditions for the so-called eigenvalue completion problem.
206.
In this article we have studied the nonlinear interaction between ellipticity and dissipation in a set of model equations (1.1) and established the relation between this interaction and chaos. In addition to theoretical investigations, extensive numerical simulations with these equations have been made, and different routes to chaos have been found. The numerical studies have revealed the chaotic nature of the solutions. 相似文献
207.
探讨了设计负动量压缩因子(αp<0)的正负电子对撞机储存环磁聚焦结构的可行性及方法.作为应用实例,说明了设计αp<0的τ–粲工厂磁聚焦结构的可能性. 相似文献
208.
209.
Han-Bin Lin Jung-Young Su Yu-Pin Liao Way-Seen Wang 《Quantum Electronics, IEEE Journal of》1995,31(6):1131-1139
By using micro-prisms, improved three-dimensional (3-D) bends of the embedded and buried waveguides of step-index profile are proposed. A simple phase compensation rule for the optimal design of the micro-prism is also presented. Through the simulation of 3-D semivectorial finite-difference beam propagation method, the transmission characteristics of the improved bends are shown to have been enhanced dramatically as compared with those of the conventional ones. Even for a bend angle of as large as 10°, the normalized transmitted power can still be greater than 95%. These results of 3-D bends are then compared with those of the two-dimensional (2-D) ones which are simplified from 3-D structures by the effective index method, and physical explanation of the discrepancy between the 3-D and 2-D results is introduced. The influences of waveguide structures and prism parameters on the transmission characteristics are discussed in detail. Some criteria for the design of large-angle low-loss 3-D improved bends are also accessed 相似文献
210.
Ku T.K. Chen S.H. Yang C.D. She N.J. Wang C.C. Chen C.F. Hsieh I.J. Cheng H.C. 《Electron Device Letters, IEEE》1996,17(5):208-210
Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities 相似文献