Tile-boundary artifact reduction using odd tile size and the low-pass first convention.

It is well known that tile-boundary artifacts occur in wavelet-based lossy image coding. However, until now, their cause has not been understood well. In this paper, we show that boundary artifacts are an inescapable consequence of the usual methods used to choose tile size and the type of symmetric extension employed in a wavelet-based image decomposition system. This paper presents a novel method for reducing these tile-boundary artifacts. The method employs odd tile sizes (2N + 1 samples) rather than the conventional even tile sizes (2N samples). It is shown that, for the same bit rate, an image compressed using an odd tile length low-pass first (OTLPF) convention has significantly less boundary artifacts than an image compressed using even tile sizes. The OTLPF convention can also be incorporated into the JPEG 2000 image compression algorithm using extensions defined in Part 2 of this standard.     

Crystallographic report: Bis{[diacetyl‐bis(2,6‐isopropylphenylimine)]nickel(I)(µ‐chloro)}

The first α‐diimine nickel(I) complex having a chloro bridge is reported. The centrosymmetric dinuclear structure of {[ArN?C(Me)C(Me)?NAr]NiCl}₂[Ar?2,6?C₆H₃(i‐Pr)₂] features two chelating α‐diimine ligands and two bridged chlorine atoms, so that a distorted tetrahedral N₂Cl₂ coordination geometry for nickel results. Copyright © 2004 John Wiley & Sons, Ltd.     

Asymmetric Regulation System Fit for Chinese Telecom Market

After the new round of restructuring of Chinese telecom sector,it's pressing to formulate and implement asymmetric regulation policies so as to shape an effectively competitive market structure in a relatively short term.This paper reviewed the asymmetric regulation policies and practices carried out in foreign telecom market,and then according to the specific situations of Chinese telecom market,proposed the principles and corresponding policies for establishing an asymmetric regulation system fit for Chin...     

Electrical characteristics of the ITO/HgInTe photodiodes

Photodiodes designed to be sensitive in the region 0.5–1.7 μm and obtained by vacuum magnetron sputtering of the ITO (SnO₂ + In₂O₃) layer on the surface of the Hg₃In₂Te₆ single crystal are studied. The electrical characteristics, measured at 265–333 K, indicate that the mechanism of charge transport in the diodes under study is thermionic. The current-voltage characteristic and its temperature variations are described quantitatively based on the energy diagram and the found parameters of the heterojunction. Original Russian Text ? L.A. Kosyachenko, I.M. Rarenko, E.F. Sklyarchuk, I.I. German, Sun Weiguo, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 568–571.     

Investigation on Single-Mode–Multimode– Single-Mode Fiber Structure

This paper presents an investigation on a single-mode-multimode-single-mode fiber structure. A one-way guided-mode propagation analysis for the circular symmetry waveguide is employed to model the light propagation and the approximated formulations are derived and evaluated concerning the accuracy. Phase conjunction of the multimode interference within the fiber structure is revealed. A simple way to predict and analyze the spectral response of the structure is presented through the space to wavelength mapping with the derived approximated formulations. The prediction of spectral response is verified numerically and experimentally.     

One-to-Many and Many-to-One Optical Chaos Communications Using Semiconductor Lasers

A theoretical construction of one-to-many (OTM) and many-to-one (MTO) chaos synchronization communications using semiconductor lasers is presented. One center laser provides strong injections (strong link) to other side lasers, and the side lasers also provide weak injections (weak link) to the center one. Simulation results show that the side lasers synchronize with the center laser through injection-locking. In addition, messages transmitted via the strong links or the weak links experience strong chaos pass filtering, enabling us to realize OTM and MTO communications.     

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control).     

Photoluminescence and X-ray Diffraction of Distributed Bragg Reflector

Spectral and structural characteristics of distributed Bragg reflector (DBR) in vertical-cavity surface-emitting lasers were studied with photoluminescence and double- crystal X- ray diffraction measurement. The expected high quality epitaxial DBR structure was verified. In the X- ray double- crystal rocking curves of DBR the zeroth- order peak, the first and second order satellite peaks were measured. Splitting of diffraction peak appeared in the rocking curves was analyzed. The effects of introduced deep energy levels on the structural perfection and optical properties were discussed.     

Distributed Optical Fiber Sensor for Multi-point Temperature Measurement

The distributed optical fiber sensing technology is overviewed, which is based on Raman scattering light theory. Basic operation principle, structure, system characteristics and signal processing are discussed. This structure and method of the signal processing possess of certain spatial resolution, hence will ensure the practicability of system.