全文获取类型
收费全文 | 314761篇 |
免费 | 3486篇 |
国内免费 | 1118篇 |
专业分类
化学 | 145137篇 |
晶体学 | 4221篇 |
力学 | 11325篇 |
综合类 | 4篇 |
数学 | 30260篇 |
物理学 | 85473篇 |
无线电 | 42945篇 |
出版年
2020年 | 2261篇 |
2019年 | 2503篇 |
2018年 | 3149篇 |
2017年 | 2982篇 |
2016年 | 4747篇 |
2015年 | 3082篇 |
2014年 | 4862篇 |
2013年 | 13189篇 |
2012年 | 9726篇 |
2011年 | 12014篇 |
2010年 | 8292篇 |
2009年 | 8649篇 |
2008年 | 11587篇 |
2007年 | 12095篇 |
2006年 | 11213篇 |
2005年 | 10502篇 |
2004年 | 9555篇 |
2003年 | 8549篇 |
2002年 | 8470篇 |
2001年 | 9810篇 |
2000年 | 7767篇 |
1999年 | 6355篇 |
1998年 | 5465篇 |
1997年 | 5496篇 |
1996年 | 5030篇 |
1995年 | 4783篇 |
1994年 | 4680篇 |
1993年 | 4698篇 |
1992年 | 4908篇 |
1991年 | 4976篇 |
1990年 | 4715篇 |
1989年 | 4482篇 |
1988年 | 4475篇 |
1987年 | 3935篇 |
1986年 | 3708篇 |
1985年 | 4841篇 |
1984年 | 5043篇 |
1983年 | 4170篇 |
1982年 | 4503篇 |
1981年 | 4326篇 |
1980年 | 4146篇 |
1979年 | 4222篇 |
1978年 | 4406篇 |
1977年 | 4242篇 |
1976年 | 4447篇 |
1975年 | 3970篇 |
1974年 | 4062篇 |
1973年 | 4398篇 |
1972年 | 2792篇 |
1971年 | 2218篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
81.
A semiconductor laser rate equation theory is presented that describes sideband injection locking under both weak optical injection and current modulation. By simultaneous optical injection and current modulation, control of both the phase and the frequency of a semiconductor laser is demonstrated. The phase-locked semiconductor laser operates at a different frequency to the optical injection source, with a frequency-difference given by the current modulation frequency. This method can be used to produce broadband sources, such as those producing ultrashort pulses and those required for coherent control, or to create high-frequency electronic oscillator sources with phase control by interference beating 相似文献
82.
New information systems and recent applications (grid computing, Web Services, and so on) are often distributed, large-scale, open, heterogeneous, and characterized by a dynamic environment. To model these complex systems, researchers have spent much effort during the last few years on multiagent systems. The aim is to model complex distributed systems as a set of (possibly organized) software agents that interact in a common environment. The decomposition of a system into a number of agents lets the system react and adapt better in a changing environment. Moreover, organized structures ("social" structures) can emerge from interactions between agents, which in turn constrain and coordinate the agents' behavior. A multiagent system takes its metaphors of interaction from social systems rather than using the metaphor of the isolated thinker that early artificial intelligence researchers preferred. An important issue when dealing with this increasing complexity is to build adaptive agents and multiagent systems. Agents and multiagent systems must be aware of their own capabilities and of changes to other agents and their environment. To remain effective, agents must be able to adapt their structures and knowledge while they execute. 相似文献
83.
A. I. D’Souza M. G. Stapelbroek P. N. Dolan P. S. Wijewarnasuriya R. E. DeWames D. S. Smith J. C. Ehlert 《Journal of Electronic Materials》2003,32(7):633-638
The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit
sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms
of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of
1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The
1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors
at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density
in the mid-10−15A/Hz1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth
in(f = 1 Hz, Vd = −60 mV, and Δf = 1 Hz) to dark current Id(Vd = −60 mV) was αSW-d = in/Id ∼ 1 × 10−3. The SWIR detectors measured at 0 mV under illuminated conditions had median αSW-P = in/Iph ∼ 7 × 10−6. For mid-wave infrared (MWIR) detectors, αMW-d = in/Id ∼ 2 × 10−4, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under
illuminated conditions at 98 K and −60 mV bias resulted in αMW-P = in/Iph = 4.16 ± 1.69 × 10−6. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias,
with a noise-current-to-photocurrent ratio, αMW-P, in the mid 10−6 range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, αLW-d = in/Id ∼ 6 × 10−6, for the best performers. The majority of the LWIR detectors exhibited αLW-d on the order of 2 × 10−5. The photo-induced 1/f noise had αLW-P = in/Iph ∼ 5 × 10−6. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if
this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps
are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as
a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular
bias. The 1/f noise was not a direct function of the applied bias. 相似文献
84.
M. Benkerri R. Halimi A. Bouabellou N. Benouattas 《Materials Science in Semiconductor Processing》2004,7(4-6):319
In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900 Å thicknesses are thermally evaporated on Si(1 1 1) substrates, part of them had previously been implanted with antimony ions of 5×1014 or 5×1015 at. cm−2 doses. The samples are heat-treated in vacuum at temperatures in the range 200–700 °C for various times. The results show the growth and formation of Cu3Si and Cu4Si silicides under crystallites shape dispatched on the sample surface, independently of the implantation dose. On the other hand, it is established that the copper layer is less and less consumed as the antimony dose increases, resulting in the accumulation of Sb+ ions at silicide/Si interface and in the silicide layer close to surface. The exposure of samples to air at room temperature shows the stability of Cu4Si phase whereas the Cu3Si silicide disappears to the benefit of the silicon dioxide formation. The observed phenomena are discussed. 相似文献
85.
A VQ-based blind image restoration algorithm 总被引:5,自引:0,他引:5
Learning-based algorithms for image restoration and blind image restoration are proposed. Such algorithms deviate from the traditional approaches in this area, by utilizing priors that are learned from similar images. Original images and their degraded versions by the known degradation operator (restoration problem) are utilized for designing the VQ codebooks. The codevectors are designed using the blurred images. For each such vector, the high frequency information obtained from the original images is also available. During restoration, the high frequency information of a given degraded image is estimated from its low frequency information based on the codebooks. For the blind restoration problem, a number of codebooks are designed corresponding to various versions of the blurring function. Given a noisy and blurred image, one of the codebooks is chosen based on a similarity measure, therefore providing the identification of the blur. To make the restoration process computationally efficient, the principal component analysis (PCA) and VQ-nearest neighbor approaches are utilized. Simulation results are presented to demonstrate the effectiveness of the proposed algorithms. 相似文献
86.
A simple template‐free high‐temperature evaporation method was developed for the growth of crystalline Si microtubes for the first time. As‐grown Si microtubes were characterized using X‐ray diffraction, scanning electron microscopy, transmission electron microscopy, and room‐temperature photoluminescence. The lengths of the Si tubes can reach several hundreds of micrometers; some of them have lengths on the order of millimeters. Each tube has a uniform outer diameter along its entire length, and the typical outer diameter is ≈ 2–3 μm. Most of the tubes have a wall thickness of ≈ 400–500 nm, though a considerable number of them exhibit a very thin wall thickness of ≈ 50 nm. Room‐temperature photoluminescence measurement shows the as‐synthesized Si microtubes have two strong emission peaks centered at ≈ 589 nm and ≈ 617 nm and a weak emission peak centered at ≈ 455 nm. A possible mechanism for the formation of these Si tubes is proposed. We believe that the present discovery of the crystalline Si microtubes will promote further experimental studies on their physical properties and smart applications. 相似文献
87.
We present a stable and practical algorithm that uses QR factors of the Sylvester matrix to compute the greatest common divisor (GCD) of univariate approximate polynomials over /spl Ropf/[x] or /spl Copf/[x]. An approximate polynomial is a polynomial with coefficients that are not known with certainty. The algorithm of this paper improves over previously published algorithms by handling the case when common roots are near to or outside the unit circle, by splitting and reversal if necessary. The algorithm has been tested on thousands of examples, including pairs of polynomials of up to degree 1000, and is now distributed as the program QRGCD in the SNAP package of Maple 9. 相似文献
88.
Hambleton P.J. Ng B.K. Plimmer S.A. David J.P.R. Rees G.J. 《Electron Devices, IEEE Transactions on》2003,50(2):347-351
The nonlocal enhancement in the velocities of charge carriers to ionization is shown to outweigh the opposing effects of dead space, increasing the avalanche speed of short avalanche photodiodes (APDs) over the predictions of a conventional local model which ignores both of these effects. The trends in the measured gain-bandwidth product of two short InAlAs APDs reported in the literature support this result. Relatively large speed benefits are predicted to result from further small reductions in the lengths of short multiplication regions. 相似文献
89.
Lorenzetto G. Galtarossa A. Palmieri L. Santagiustina M. Someda C.G. Fiorone R. 《Lightwave Technology, Journal of》2003,21(2):424-431
First-order polarization-mode dispersion (PMD) compensation by means of a polarization controller and a differential delay line is not sufficient to guarantee error-free transmission for 40-Gb/s channels when higher order effects severely increase signal distortion. Higher order mitigation is possible by cascading more than one first-order block. However, only two-stage or three-stage devices remain simple enough to be actually controlled. The performance of such higher order PMD compensators is evaluated by means of numerical simulations. Two different feedback signals have been used, demonstrating that first-order and higher order PMD distortion of nonreturn-to-zero (NRZ) pulses at 40 Gb/s can be strongly mitigated for instantaneous values of the differential group delay (DGD) up to the bit slot, when the compensator is properly controlled. 相似文献
90.
Mitchell A. Lech M. Kokotoff D.M. Waterhouse R.B. 《Antennas and Propagation, IEEE Transactions on》2003,51(2):249-255
High-performance circular probe-fed stacked patch antenna designs are explored through the use of numerical optimization. New trends are sought to aid understanding and to suggest novel solutions. We describe the optimization technique, present a new design trend relating efficiency and bandwidth to the choice of substrate dielectric, and propose and demonstrate a novel, optimized antenna achieving 33% bandwidth whilst maintaining greater than 80% surface wave efficiency. 相似文献