Characteristics of soft magnetic composite material under rotating magnetic fluxes

This paper reports the measurement of magnetic properties of the soft magnetic composite material SOMALOY^TM 500 in a square sample under different patterns of flux density with 2D magnetic excitations. The test system, principle of measurement, magnetic power loss calculation, and methods of correction for misalignment of H surface sensing coils are presented. The experimental results show that although nominally isotropic, the SOMALOY^TM 500 sample exhibits some anisotropy. The results are useful in the design and performance analysis of rotating electrical machines.     

The speciation of arsenic in seawater and marine species

Dissolved inorganic arsenic species were determined in natural waters and selected marine species. Prior to irradiation by NAA samples were preconcentrated and the As(III) and As(V) species separated by APCDT-chloroform extraction. Marine samples were digested by microwave heating. Interpretation of data was achieved by comparing the ratio of As(III)/As(V) in the samples and correlating it with the prevailing environmental conditions.     

Reaction of pentafluorobenzoylpyruvic acid with amines

Reactions of pentafluorobenzoylpyruvic acid with amines afford the respective enamines. The intramolecular cyclization of the latter results inN-substituted 4-quinolone-2-carboxylic acids. Ammonia and triethylamine favor the cyclization of pentafluorobenzoylpyruvic acid to 2-carboxychromone.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 2, pp. 299–302, February, 1994.     

Analogy of thermogravimetric measurements

Dimensionless number has been developed and introduced for quantitative analysis of the effect of thermogravimetric measuring factors like sample quantity, heating rate, etc. The TG, DTG and T data of different thermogravimetric measurements can be used directly for calculation of the three constants of analogy. TG data of CaCO₃ measured in very different conditions show the method of transformation and its applicability for calculation of the correlation of measurements.     

Thermal decomposition of hexamminecobalt(III) chloride

The results of comparative thermal analysis (TG-DTG-DTA-DSC) of the thermal decomposition of hexamminecobalt(III) chloride in air atmosphere are reported. The kinetics and mechanism of the thermal decomposition, the process enthalpy and the variation in specific thermal capacity of the solid product reaction with temperature were determined.     

Development of a so-called hour method for analysis of plutonium in soil samples

A short overview of HPLC column packings is presented. The properties of chromatographic carriers and the possibilities to combine the solid matrices with organic polymeric stationary phases are elucidated in detail. The latest achievements and anticipated future developments in the area are outlined.     

Chemical isolation of element 106 from aqueous solutions according to model experiments with short-lived tungsten isotopes

The short-lived isotopes of W and their descendants have been isolated from the products of the bombardment of¹⁴⁴Sm with²⁴Mg by a fast continuous ion-exchange method, using HF solution media. The feasibility of this method for isolation of element 106 is discussed.     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device