江苏省本地电话网结构与发展

分片汇接的网状网结构是江苏省本地电话网的基本框架,而汇接局和连接汇接局的传输系统则是网路规划与通信建设的重点。     

Analysis of dispersion characteristics for a circular dielectric waveguide with periodic metallic strips by using the method of lines

The dispersion characteristics of circular dielectric waveguide with periodic metallic strips are analyzed by the method of lines. The filter property of the metallic strip loaded structure is carefully investigated for both TE and TM modes. The brillioum diagrams for both TE₀₁ and TM₀₁ modes are given. A comparison is made between the results obtained by Galerkin's method and those calculated with the method of lines, and very good agreement has been found; the accuracy of the present method is thus justified. On the basis of the analysis, some useful guidelines for the design of the bandreject filters are suggested.     

Preparation and structural stability investigation of CoN/CN soft X-ray multilayers

The structural stability of heat-treated CoN/CN soft X-ray multilayers fabricated by dual-facing-target sputtering has been investigated by using complementary measurement techniques. The high temperature annealing results imply that the destructive threshold of the Co/C multilayers is improved by 100–200 degrees centigrade through doping with N. The low-angle X-ray diffraction of CoN/CN soft X-ray multilayers indicates that the period expansion of the multilayers is only 4 % at 400°C, and the interface pattern still exists even if they were annealed at 700°C. The Raman spectra analyses give the evidence that the formation of the sp³ bonding in the CN sublayers can be suppressed effectively by doping N with atoms, and thus the period expansion resulting from the changes in the density of CN layers can be decreased considerably. The X-ray photoelectron spectra analyses present the information of the existence of the strong covalent bonding betweenC andN atoms, and the ionic bonding between Co and N atoms, which can slow down the tendency of the structural relaxation. The interstitial N atoms decrease the mobility of Co atoms, and thus the fcc-Co and hcp-Co coexist even though the annealing temperature is much higher than the phase transformation temperature of 420°C, leading to the suppression of the grain growth.     

Distances between oriented curves in geometric modeling

We consider the choice of a functional to measure the distance between two parametric curves. We identify properties of such a distance functional that are important for geometric design. Several popular definitions of distance are examined, and new functionals are presented which satisfy the desired properties. This revised version was published online in August 2006 with corrections to the Cover Date.     

Orbifolds, Sheaves and Groupoids

We characterize orbifolds in terms of their sheaves, and show that orbifolds correspond exactly to a specific class of smooth groupoids. As an application, we construct fibered products of orbifolds and prove a change-of-base formula for sheaf cohomology.     

自相似结构壳模型

为了扩展以简谐振子为基矢的常规壳模型（ＳＭ）计算到晕核，提出了自相似结构壳模型（ＳＳＭ）．通过对简谐振子动能项和势能项的重度规以及单粒子平均场模拟，可以得到ＳＳＭ中的单粒子轨道有态相关的圆频率，在ＳＳＭ中，晕核大的均方根半径、厚的中子皮以及Ｂｏｒｒｏｍｅａｎ晕核和的束缚态性质能够再现出来。     

The importance of electrochemistry-related etching in thegate-groove fabrication for InAlAs/InGaAs HFETs

For the first time, the surface metal on nonalloyed ohmic electrodes is found to significantly change the profiles of gate grooves, when resist openings are employed to monitor drain current during wet-chemical gate recess for sub-micron InAlAs/lnGaAs heterojunction field-effect transistors (HFETs). The surface metal of Ni enhances the etching rate in comparison with that in the absence of electrodes by a factor of 4 and 10, laterally and vertically, which is favorable to fabricate deep gate grooves with small side etching. The Pt surface metal, however, leads to preferential etching of InGaAs over InAlAs, which can be useful to realize large side etching. The existence of an electrochemistry-related etching component, which arises when the ohmic electrodes are present during recess etching, is considered to be responsible for these behaviors     

分子振动态及其跃迁的激光相干控制

讨论了激光合成相干叠加态的原理及其性质 ,针对 XY2 型分子 ,证明了合成局域模振动的可行性 ,然后给出相干叠加态的跃迁几率特征 ,发现它仍表现出相干的特性 ,对之进行分析研究表明 ,分子的振动态具有可控性 ,态跃迁几率具有可控性。     

复杂目标近场电磁散射的可视化计算方法

首次介绍了复杂目标近场散射计算的可视化方法。采用非均匀有理Ｂ样条曲面（ＮＵＲＢＳ）精确构造任意形状散射体，结合几何体近场透视变换和Ｚ－Ｂｕｆｆｅｒ技术实现了基于Ｗｉｎｄｏｗｓ平台的近场散射计算。提出广义雷达散射截面的概念并给出的若干算例。该方法充分利用了计算机３Ｄ图形设备的几何运算能力，运算速度快，严谨高，可扩展性好。