布里奇曼法生长碲镉汞晶体的固液界面形态研究

文中综述了布里奇曼法及加速坩埚旋转技术的布里奇曼法生工碲镉汞晶体过程中固液界面形态的研究结果，简单讨论了固液界面形态对组分分布的影响，并将两种技术所得的组分分布结果进行了比较，在分析影响固液界面形态因素的基础上，认为加速坩埚旋转技术是目前改善固液界面形态的有效方法。     

X波段及DBS接收用PHEMT单片低噪声放大器

报道了X波段及DBS接收用单片低噪声放大器的研制结果。利用CAD软件对单片电路进行优化设计，设计工作包括MBE材料、PHEMT器件和单片电路三部分。在研制过程中，开展了关键工艺的专题研究。研究结果为：单级单片放大器在10：5－11．6GHz范围内，NF≤1．82dB，G≥7.72dB；在11．7－12．2GHz范围内，NF≤1．80dB，G≥6．8dB；双级放大器在10．4－11．1GHz范围内，NF≤1．96dB，G≥15．3dB，最低噪声系数为1．63dB，最高增益为16．07dB。     

分子振动态及其跃迁的激光相干控制

讨论了激光合成相干叠加态的原理及其性质 ,针对 XY2 型分子 ,证明了合成局域模振动的可行性 ,然后给出相干叠加态的跃迁几率特征 ,发现它仍表现出相干的特性 ,对之进行分析研究表明 ,分子的振动态具有可控性 ,态跃迁几率具有可控性。     

The relation between luminous properties and oxygen content inZnS:TbOF thin-film electroluminescent devices fabricated byradio-frequency magnetron sputtering method

The purpose of this paper is to study the relationship between the oxygen concentration and brightness degradation in ZnS:TbOF green thin-film electroluminescent (EL) devices. The characteristics including crystallinity, optical, and electrical properties were discussed. The brightness-voltage (B-V) measurement results shelved that with higher oxygen-content in ZnS:TbOF phosphor layer, lower brightness was measured. It was consistent with the poor crystallinity, worse photoluminescent intensity, and easier to get moisture in the oxygen-rich (O/Tb>1) phosphor film. Furthermore, deep level transient spectroscopy (DLTS) measurements identified that when the O/Tb ratio was greater than 1, the oxygen-related deep hole traps E_H1 and/or E_H2 could be detected in the ZnS:TbOF phosphor layer. These E _H1 and/or E_H2 traps were believed to be the main killers for the brightness of the device since they capture most of the holes from the generated electron-hole pairs. This evidence strongly supports that the modified energy transfer model is more dominant than direct impact excitation during the luminescent process     

彩色PDP用玻璃基板

本文讨论了彩色ＰＤＰ现用钠钙玻璃的热稳定性，指出由于这种玻璃在热处理过程中易变形和收缩，因而不适合作大面积彩色ＰＤＰ基板材料，介绍了彩色ＰＤＰ基板玻璃的制造方法和特点。最后介绍了日本旭硝子公司和美国康宁公司各自为彩色ＰＤＰ新开发的玻璃基板材料ＰＤ２００和ＣＳ２５。     

精密角位移传感器及其可靠性研究

从理论上探讨了磁阻率效应，叙述了精密角位移传感器的工作原理及结构设计。传感器的分辨率已达０．０１°，通过可靠性寿命试验，传感器的失效率λ（ｔ）＜１×１０－７／ｈ。     

Al—Si—Mn—Fe合金中相组成的电子衍射鉴定

本文利用选区电子衍射,并结合X射线衍射对六种不同成份的急冷合金及其退火后的相组成进行了鉴定,得到了它们的相组成。     

红外加热胶接技术

提出了红外加热胶接的思想，并对红外加热胶接技术作了简单阐述。介绍了一种红外加热胶接矿用阻燃、防腐、橡塑风筒布的装置。     

蓄冰空调制冷新技术

文章叙述了中央人民广播电台新业务楼空调工程中采用蓄冰空调制冷新技术的情况。文章讲解了蓄冰空调原理，并对蓄冰制冷与常规制冷技术进行比较，指出：从节电上来考虑，前者具有经济性。文章最后列举了今后在设计和维护上，还有待解决的一些问题。     

An analytical model for I-V and small-signalcharacteristics of planar-doped HEMTs

An analytical current-voltage (I-V) model for planar-doped HEMTs is developed. This compact model covers the complete range of I-V characteristics, including the current saturation region and parasitic conduction in the electron-supplying layer. Analytical expressions for the small-signal parameters and current-gain cutoff frequency are derived from the I-V model. Modeling results for a 0.1-μm-gate planar-doped AlInAs-GaInAs HEMT show excellent agreement with measured characteristics. Threshold voltages and parasitic conduction in planar-doped and uniformly doped HEMTs are also compared and discussed