Effect of hydrogen annealing on hot-carrier instability of X-Ray irradiated CMOS devices

In the very large scale integration (VLSI) technology, the need for high density and high performance integrated circuit (IC) chip demands advanced processing techniques that often result in the generation of high energy particles and photons. Frequently, the radiation damage are introduced by these energetic particles and photons during device processing. The radiation damage created by x-ray irradiation, which can often occur during metal sputtering process, has been shown to potentially enhance hot-carrier instability if the neutral traps which act as electron or hole traps in the silicon dioxide is not annealed out. In this paper, we investigate the effects of annealing using different hydrogen contents and temperatures on the device characteristics and hot carrier instability of 0.5 μm CMOS devices after 1500 mJ/cm² synchrotron x-ray irradiation. Three different annealing conditions were employed; 400° C H₂, 450° C H₂, and 400° C H₂ + N₂. It is found that for all three different hydrogen anneals the normal characteristics of irradiated CMOS devices can be effectively recovered. The hot-carrier instability of bothp- andn-channel MOSFETs are significantly enhanced after x-ray irradiation due to the creation of neutral traps and positively charged oxide traps. After high H₂ (100%) concentration anneals at 450° C, the hot-carrier instability in irradiatedn-channel devices is greatly reduced and comparable to the non-irradiated devices. Although the hot-carrier instability inp-channel devices is also significantly reduced after annealing, the threshold voltage shifts are still enhanced as compared to the devices without exposure to x-ray irradiation during maximum gate current stress. For those non-irradiated, but hydrogen-annealedp-channel devices, the hot-carrier instability was observed to be worse than the non-irradiated device without hydrogen annealing.     

New materials for diode laser pumping of solid-state lasers

The authors review recent progress in the development of new materials for III-V semiconductor diode lasers useful for pumping solid-state lasers. All of the diode lasers discussed are grown on GaAs substrates. Particular emphasis is placed on the performance and reliability of high-CW-power strained-layer InGaAs-AlGaAs diode lasers emitting in the wavelength range between 0.87 and 1.1 μm, improved resistance to degradation of 0.78 to 0.87 μm diode lasers afforded by the strained-layer AlInGaAs-AlGaAs and lattice-matched GaInAsP-GaInP materials systems, and improved performance of visible diode lasers utilizing the materials system GaInP-AlGaInP     

电视墙系统中的存储器设计

电视墙系统中的存储器设计有多种方案。本文通过比较优选了其中的一种,即一■存储器方案,并详细介绍了具体电路。     

高清晰度电视对天线馈线系统的要求

本文以传输带宽为6MHz的NTSC制为例,阐述了高清晰度电视对天线馈线系统的具体要求,其原则对带宽为8MHz的其它制式也适用。     

偏心介质棒加载圆波导模式分析

本文基于柱谐基函数展开,对偏心介质棒加载的圆波导模式进行分析.利用Bessel函数的加法定理,在边界上进行场匹配,获得关于诸传播常数K_z的方程.对方程进行级数截断后,可以方便地解出该波导的各种传播模式,具有收敛性可靠,结果精确、计算量小的特点,比PMM和LSBRM更为可靠易行.     

封装技术评述

评述了当前封装技术的特点以及应用,介绍了多芯片组件、突点互连技术、球栅阵列、板上芯片、板上倒装芯片和柔性电路板上芯片技术以及片上引线与引线上芯片技术。     

94 GHz down-conversion mixer with gain enhanced Gilbert cell in 90 nm CMOS

This paper introduces an adaptive semiblind background calibration of timing mismatches in a two-channel time-interleaved analog-to-digital converter (TIADC). By injecting a test tone at the frequency of half the overall sampling frequency of TIADC, the timing mismatch between two sub-ADCs can be quickly estimated with great accuracy without affecting the normal operation of the TIADC. The estimated coefficient can then be used in compensation module formed by a fixed structure to calibrate the timing mismatches. Simulation results demonstrate the effectiveness of the proposed estimation and correction technique.     

Complete parameter measurement for MIMO bistatic radar without synchronization

In order to measure the range, angle, and Doppler frequency of the target without any synchronization in the bistatic radar, a novel complete parameter estimation method based on separability of a pair of Linear Frequency Modulation (LFM) signal is presented. The Doppler frequency is measured by the time difference between two peak positions corresponding to the positive and the negative LFM return signal respectively. Direction Of Departures (DODs) and Direction Of Arrivals (DOAs) of the target are estimated by constructing a special eigenmatrix in which the estimated angles can be extracted from the eigenvalue or the eigenvector. The target position can be located in the presence of the estimated DODs, DOAs and the signal delay difference between the echo and the directive wave signal in Multiple Input Multiple Output (MIMO) bistatic radar without any synchronization. The correctness and effectiveness of the proposed method are verified by the computer simulation.     

Rate Control Algorithm Considering Mobility in Mobile Ad Hoc Networks

For reducing the loss of data packet due to network congestion and mobility, rate control algorithm is effective means for ensuring the fair allocation of network resource among communication flows and alleviating network congestion. The Transport Control Protocol (TCP) was originally designed for wire-line networks, where the links are assumed to be reliable and with fixed capacities. However, the performance of TCP becomes very poor when it is directly used in ad hoc networks. Some optimization-based congestion control schemes have been proposed to improve TCP performance in ad hoc networks, but the mobility of hosts and route change frequently are not considered for designing rate control algorithm. In this paper, we propose rate control algorithms in a more practical way by taking into account link congestion and node movement. Numerical results show that the rate control algorithms can approach the globally optimal value and show the effect of the node mobility on the algorithms.