两种自主开发的图形外延SiGe工艺

使用清华大学微电子学研究所研发的UHV/CVD系统深入研究了图形外延SiGe工艺,分别选用单一的SiO2介质层和SiO2/P0ly-Si复合介质层,作为图形外延SiGe单晶材料的窗口屏蔽介质,开发出了不同的实用化图形外延SiGe工艺.     

计算机网络信息安全技术分析

本文论述了计算机网络面临的威胁和常见的黑客入侵技术，然后从信息加密技术、防火墙技术、入侵检测技术、系统容灾技术、网络安全管理策略等方面，分析了计算机网络信息安全的基本对策。     

基于"替换法"的汉字加、解密实现技术

文章讨论的基于“替换法”的汉字信息加、解密实现技术,改变了传统的汉字加密结果,使加密后的密文仍是可以识别和再利用的汉字,发送者可以在任何可编辑汉字的通讯设备上发送和接收密文,确保中文信息传输过程中的安全性。加、解密算法实现的代码语言为VFP6.0。     

静电驱动悬臂梁数模转换器设计、分析与模拟

提出了一种新型的微电子机械数模转换器 (MEMDAC)———静电驱动悬臂梁数模转换器 .与传统的静电驱动悬臂梁执行器相比 ,新的结构能更精确地控制梁的挠度 .文中给出了此MEMDAC的设计、分析和模拟过程 .有限元(FEA)分析表明此MEMDAC的最大输出位移为 1 5 1μm ,分辨率为 0 1μm ,其最大非线性误差为 0 0 3μm .     

Photo-bleaching induced electro-optic polymer modulators with dual driving electrodes operating at 1.55 /spl mu/m wavelength

Electro-optic (EO) polymeric Mach-Zehnder (MZ) modulators with photo-bleaching (PB) induced waveguides and dual driving electrodes operating at 1.55 /spl mu/m wavelength have been demonstrated. The half-wave voltage of the integrated polymeric modulator was 4.5 V in a push-pull configuration with a 1.5 cm interaction length. The extinction ratio was greater than 20 dB, and the fibre-to-fibre insertion loss was 8 dB for the TM polarisation. The achieved fibre-to-fibre insertion loss and driving voltage are the best, to the authors knowledge, in the reported PB induced MZ EO polymeric modulators.     

Littman光栅外腔可调谐Yb3+双包层光纤激光器

本文对LD泵浦的光栅外腔可调谐双包层Yb3 光纤激光器进行了实验研究．采用Littman外腔结构，研究了Yb3 光纤激光器的调谐特性．输出激光调谐范围42nm，谱线宽度0．08nm，最大输出功率达到了460mW，斜率效率约30％．并对其输出光功率随波长的变化进行了观测和分析．     

光纤中的SBS反射率和波形研究

从理论和实验上研究了不同焦距下泵浦能量以及透镜与光纤间距对多模光纤中的SBS能量反射率和脉冲波形的影响。理论模拟采用一维瞬态SBS数值计算模型和边界噪声输入法，得到了SBS反射率和脉冲上升沿的变化规律。实验上采用1.06μm的YAG激光器和无掺杂多模阶跃石英光纤，测得了能量反射率和波形的变化规律，获得的最大反射率为69%，脉宽压缩比为3:1-2:1。计算结果与实验结果符合较好。     

基于MOBILE的JK触发器设计

介绍了一种新型量子逻辑单元电路——单稳双稳转换逻辑单元及其工作原理,在此基础上探讨并设计了以MOBILE为基本单元电路的具有同步置位复位功能的边沿型JK触发器电路,从而丰富了量子电路中触发器的类型     

Packet acquisition in upstream transmission of the DOCSIS standard

In upstream transmission of the DOCSIS (data over cable service interface specification) 1.0/1.1 and the TDMA mode of DOCSIS 2.0 standard, a packet begins with a preamble, the length and value of which are programmable by the headend. The acquisition process includes packet detection, symbol timing estimation, carrier frequency offset estimation and carrier phase estimation by means of the preamble so that the following information packet can be correctly demodulated. Methods to solve these tasks are not subject to standardization and are left to the system designer. However, they have a great impact on the system performance and thus are key elements for implementation. We present dedicated algorithms. A specific preamble is created and the corresponding scheme for packet acquisition is described in some detail. The packet detecting algorithm is independent of the carrier and symbol timing. The symbol timing estimate is obtained by using the minimum mean square algorithm regardless of the carrier frequency deviation and carrier phase. Algorithms for estimating the carrier frequency offset and carrier phase are proposed. Computer simulation results are given for all algorithms presented.     

Breakdown probabilities for thin heterostructure avalanche photodiodes

The recurrence theory for the breakdown probability in avalanche photodiodes (APDs) is generalized to heterostructure APDs that may have multiple multiplication layers. The generalization addresses layer-boundary effects such as the initial energy of injected carriers as well as the layer-dependent profile of the dead space in the multiplication region. Reducing the width of the multiplication layer serves to both downshift and sharpen the breakdown probability curve as a function of the applied reverse-bias voltage. In structures where the injected carriers have an initial energy that is comparable to the ionization threshold energy, the transition from linear mode to Geiger-mode is more abrupt than in structures in which such initial energy is negligible. The theory is applied to two recently fabricated Al/sub 0.6/Ga/sub 0.4/As-GaAs heterostructure APDs and to other homostructure thin GaAs APDs and the predictions of the breakdown-voltage thresholds are verified.