多孔硅发光的物理机制——纳米量子限制效应及表面态在发光中的作用

采用阳极氧化腐蚀的方法制备了多孔硅（ＰＳ），这种ＰＳ的微结构为纳米量级的，并具有光致发光特性，这无疑将对全硅光电子学的发展具有很大意义。根据大量实验与理论分析，提出了这种ＰＳ发光的物理机制：纳米量子限制效应和表面态及其物质在发光中的作用，从量子力学的薛定锷方程出发，用沟道势阱的近似模型，推导得到进入量子线的电子和空穴的能量势垒，ＰＳ的有效带宽Ｅ＝Ｅ＿０＋ΔＥ，对于Ｓｉ（Ｅ＿０＝１．１２ｅｖ）。完美地解释了目前在ＰＳ研究中的ＰＬ谱的篮移现象。     

An isolated ZVS/ZCS flyback converter using the leakage inductanceof the coupled inductor

This paper describes a simple and effective way to modify an existing hard-switched flyback power converter into a circuit with zero-voltage switching (ZVS) and zero-current switching (ZCS). The key improvement is to turn the unattractive features of the coupled inductor leakage inductance and snubber capacitor into attractive ones. The coupled inductor leakage inductance and snubber are used to form a quasi-resonant circuit to facilitate ZVS/ZCS of all power devices. The operating principles of the power converter and experimental results are presented     

Is layering, harmful? [remote procedure call]

Remote procedure call (RPC) mechanisms over the US Department of Defense transmission control protocol. (TCP) can produce behavior analogous to the silly window syndrome because of a mismatched interface between the socket and the TCP modules. The detection and diagnosis of the problem are addressed. Some pointers to a design approach that could avoid the problems of mismatched communication layers are provided     

Application of coupling methods to the Neumann eigenvalue problem

Summary By using coupling methods, some lower bounds are obtained for the first Neumann eigenvalue on Riemannian manifolds. This method is new and the results improve some known estimates. An example shows that our estimates can be sharp.Research supported in part by the Foundation of Beijing Normal University     

X-ray evidence for the absence of 90°-domains in polycrystalline PbTiO3 thin films with grains below a critical size

3 thin films is systematically studied by using X-ray diffraction (XRD). The PbTiO₃ thin films with different average grain sizes were prepared on various substrates by a sol-gel process. The films on NaCl and fused glass are randomly grain-oriented, while those on (111)Pt/Ti/SiO₂/Si are highly {100} cubic index grain-oriented . It is found from the XRD patterns of the films on NaCl that with decreasing average grain size from 230 to 80 nm, the intensities of high h index (h>l) peaks (hkl), such as (100), (110), (200), (201), (210), (211), etc., decrease rapidly and ultimately disappear, whereas another set of peaks (lkh), including (001), (002), (102), (112), etc., are still intense. This interesting result suggests that at grain size below a certain critical size an increasing number of grains no longer show 90°-domains, which is confirmed by TEM observations. Meanwhile, X-ray evidence of such a grain-size-related absence of 90°-domains is also found for PbTiO₃ films on Pt(111) and fused-glass substrates. The volume fractions of single-domain grains (without 90°-domains) in the films are estimated from their XRD patterns. By combining SEM and TEM investigations, the critical grain size for the formation of 90°-domains is further determined to be near 200 nm. Received: 19 December 1996/Accepted: 24 March 1997     

High-breakdown-voltage AlSbAs/InAs n-channel field-effecttransistors

InAs channel field-effect transistors of 1-μm gate length were grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 were observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to those of GaAs-based devices and are the highest observed for InAs channel devices. The results demonstrate the potential for practical room-temperature operation of InAs FETs     

一种可用于可调谐环行Ti：Al_2O_3激光器的宽带单向器

本文介绍一种宽带单向器的原理及设计。选用ＴＧＧ作磁旋光介质，旋光石英晶片作补偿片，所设计的色散补偿型宽带单向器预计可在７００～１０００ｎｍ波长范围内实现环行激光腔中的单向行波运行；将其应用在可调谐环行Ｔｉ：Ａｌ２Ｏ３激光器中，获得了良好的实验结果。     

Direct imaging of a high-power diode laser cavity using a transparent indium-tin-oxide (ITO) contact

We describe a novel "see-through" indium-tin-oxide contact on the n-side of a high power unstable resonator semiconductor laser (URSL) that allows direct observation of the cavity during high power operation. Under optimized annealing conditions this transparent ITO contact has a low enough specific contact resistivity to permit normal high power CW operation of the URSL and allows the observation of filamentation. This contact scheme is applicable to a wide range of semiconductor lasers and is especially appropriate for high power devices. The same structure can also be used to obtain a 2-D thermal map of the laser cavity.     

High-T/sub 0/ strain-compensated InGaAsSb-AlGaAsSb quantum-well lasers emitting at 2.43 /spl mu/m

Strain-compensated InGaAsSb-AlGaAsSb quantum-well (QW) lasers emitting near 2.5 /spl mu/m have been grown by solid-source molecular beam epitaxy. The relatively high arsenic composition causing a tensile strain in the Al/sub 0.25/GaAs/sub 0.08/Sb barriers lowers the valence band edge and the hole energy level, leading to an increased hole confinement and improved laser performance. A 60% external differential efficiency in pulsed mode was achieved for 1000-/spl mu/m-long lasers emitting at 2.43 /spl mu/m. A characteristic temperature T/sub 0/ as high as 163 K and a lasing-wavelength temperature dependence of 1.02 nm//spl deg/C were obtained at room temperature. For 2000 /spl times/ 200 /spl mu/m/sup 2/ broad-area three-QW lasers without lateral current confinement, a low pulsed threshold of 275 A/cm/sup 2/ was measured.     

Preparation of dye-loaded SiO2 nanoparticles

A room temperature method for the encapsulation of pyrene in SiO₂ nanoparticles is described. The relation between alkoxysilane surfactant chain length, reactant molar ratios and the uptake of dye, sample morphology, photophysical properties, and the ability of the silicate matrix to protect the encapsulated dye was examined. The synthesis can easily be adapted for the encapsulation of other hydrophobic and thermolabile substances, and used in the development of nanostructured optically active coatings, films and monoliths.