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271.
根据栅控恒压电晕充电组合反极性电晕补偿充电法的实验结果计算出铁电驻极体的极化强度.结果说明,伴随着薄膜内孔洞气体的Paschen击穿,该铁电体的极化强度随栅压增加而显著上升.利用上述充电方法和热刺激放电(TSD)谱的分析讨论了这类空间电荷型宏观电偶极子,及与其补偿的空间电荷热退极化的电荷动态特性;阐明了这两类俘获电荷的能阱分布,即构成宏观电偶极子的位于孔洞上下介质层内的等值异号空间电荷分别被俘获在深、浅两种能值陷阱内,而位于薄膜表面层的注入空间电荷则被俘获在中等能值陷阱中.
关键词:
反极性电晕补偿充电法
铁电驻极体
充电电流
热刺激放电 相似文献
272.
273.
274.
This paper reports that the m-plane GaN layer is grown on (200)-plane LiAlO2 substrate by metal-organic chemical wpour deposition (MOCVD) method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer's thickness. The high transmittance (80%), sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate. 相似文献
275.
T-型树谱唯一性的一个简单刻画 总被引:1,自引:0,他引:1
图G称为谱唯一的,如果任何与G谱相同的图一定与G同构.一棵树称为T-型树如果其仅有一个最大度为3的顶点.本文给出了T-型树谱唯一性的一个简单刻画,从而完全解决了T-型树的谱唯一性问题. 相似文献
276.
All-optical frequency multiplication/recovery based on a semiconductor optical amplifier ring cavity
Fei Wang 《Optics Communications》2006,257(2):334-339
A novel scheme for all-optical frequency multiplication/recovery based on a semiconductor optical amplifier ring cavity is proposed and investigated numerically. The results show, for a 2.5 GHz driving pulse train, it can be generated 5-25 GHz repetition rate pulse trains with low clock amplitude jitter, polarization independence and high peak power. Furthermore, the extraction of the clock signal from a pseudorandom bit sequence signal can be realized based on the proposed scheme. 相似文献
277.
Haifeng Yang Guangming XieTianguang Chu Long Wang 《Nonlinear Analysis: Theory, Methods & Applications》2006
In the paper, commuting and stable feedback design for switched linear systems is investigated. This problem is formulated as to build up suitable state feedback controller for each subsystem such that the closed-loop systems are not only asymptotically stable but also commuting each other. A new concept, common admissible eigenvector set (CAES), is introduced to establish necessary/sufficient conditions for commuting and stable feedback controllers. For second-order systems, a necessary and sufficient condition is established. Moreover, a parametrization of the CAES is also obtained. The motivation comes from stabilization of switched linear systems which consist of a family of LTI systems and a switching law specifying the switching between them, where if all the subsystems are stable and commuting each other, then the total system is stable under arbitrary switching. 相似文献
278.
具有某种断面的半群的研究进展 总被引:1,自引:0,他引:1
本文综述了几类具有特殊断面的半群的近期研究结果。在介绍逆半群和正则半群的一般结构之后,概述了具有逆断面的正则半群的结构和同余格的研究成果。总结了作为逆断面的推广的可裂断面,纯正断面,正则^*-断面和恰当断面。提出了可以进一步研究的重要的问题。 相似文献
279.
The results of laser induced deposition of copper on polyimide substrate from copper electrolyte solution are reported. Unlike most work reported in the literatures where CW Ar+ lasers were used, a second harmonic (532 nm wavelength) Q-switch Nd:YAG laser was used for our experiments. The deposition process was conducted by laser-catalyzing of the polyimide surface and subsequent photothermal-accelerated reduction of copper-complex ions in an alkaline reducing environment. The characteristics of the deposited copper line were investigated in terms of laser beam scanning speed, and the number of scans. The surface morphology and chemical composition of the deposited copper were analyzed using field emission scanning electron microscope (FESEM) and energy dispersive spectrometer (EDX). The optimum processing conditions have been identified. The copper deposit was found to adhere well to the substrate. 相似文献
280.
The interfacial reactions between liquid In and Cu substrates at temperatures ranging from 175°C to 400°C are investigated
for the applications in bonding recycled sputtering targets to their backing plates. Experimental results show that a scallop-shaped
Cu16In9 intermetallic compound is found at the Cu/In interface after solder reactions at temperatures above 300°C. A double-layer
structure of intermetallic compounds containing scallop-shaped Cu11In9 and continuous CuIn is observed after the Cu/In interfacial reaction at temperatures below 300°C. The growth of all these
intermetallic compounds follows the parabolic law, which implies that the growth is diffusion-controlled. The activation energies
for the growth of Cu16In9, Cu11In9, and CuIn intermetallic compounds calculated from the Arrhenius plot of growth reaction constants are 59.5, 16.9, and 23.5
kJ/mole, respectively. 相似文献