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121.
对四种不同的实验构型下空气/水界面自由O-H键在3700cm~(-1)的和频振动光谱的分析表明,水分子在空气/水界面的取向运动只可能是在平衡位置附近有限角度之内的受限转动。界面水分子的自由O-H键取向距界面法线约33°,而取向分布或运动的宽度不超过15°。这一图像显著地不同于Wei等人(Phys. Rev. Lett.86,4799(2001))只通过单一的SFG实验构型所得出结论,即:空气/水界面的水分子在超快的振动弛豫时间内在很大的角度范围内运动。  相似文献   
122.
In the paper, commuting and stable feedback design for switched linear systems is investigated. This problem is formulated as to build up suitable state feedback controller for each subsystem such that the closed-loop systems are not only asymptotically stable but also commuting each other. A new concept, common admissible eigenvector set (CAES), is introduced to establish necessary/sufficient conditions for commuting and stable feedback controllers. For second-order systems, a necessary and sufficient condition is established. Moreover, a parametrization of the CAES is also obtained. The motivation comes from stabilization of switched linear systems which consist of a family of LTI systems and a switching law specifying the switching between them, where if all the subsystems are stable and commuting each other, then the total system is stable under arbitrary switching.  相似文献   
123.
The results of laser induced deposition of copper on polyimide substrate from copper electrolyte solution are reported. Unlike most work reported in the literatures where CW Ar+ lasers were used, a second harmonic (532 nm wavelength) Q-switch Nd:YAG laser was used for our experiments. The deposition process was conducted by laser-catalyzing of the polyimide surface and subsequent photothermal-accelerated reduction of copper-complex ions in an alkaline reducing environment. The characteristics of the deposited copper line were investigated in terms of laser beam scanning speed, and the number of scans. The surface morphology and chemical composition of the deposited copper were analyzed using field emission scanning electron microscope (FESEM) and energy dispersive spectrometer (EDX). The optimum processing conditions have been identified. The copper deposit was found to adhere well to the substrate.  相似文献   
124.
This paper verifies the singularity conjecture for Jacobi forms with higher degree in some typical cases, and gives constructions for the Jacobi cusp forms whose Fourier coefficients can be expressed by some kind of Rankin-typeL-series.  相似文献   
125.
This paper deals with positive solutions of degenerate and quasilinear parabolic systems not in divergence form: ut=up(Δu+av), vt=vq(Δv+bu), with null Dirichlet boundary conditions and positive initial conditions, where p, q, a and b are all positive constants. The local existence and uniqueness of classical solution are proved. Moreover, it will be proved that all solutions exist globally if and only if ab?λ12, where λ1 is the first eigenvalue of −Δ in Ω with homogeneous Dirichlet boundary condition.  相似文献   
126.
本文介绍了用单片机实现的小型燃油蒸汽锅炉控制系统 ,对硬件电路组成及其软件设计作了较为详细的介绍。  相似文献   
127.
从理论上论述了红外诱饵弹中药剂的组成、性能和配比 ,通过理论计算结果分析药剂的组成。为确定红外诱饵干扰点源红外寻的制导导弹的药剂配方提供依据。  相似文献   
128.
We present a new iterative alternating-direction-implicit finite-difference time-domain (ADI-FDTD) method. By recognizing the ADI-FDTD method as a special case of a more general iterative approach to solve the Crank-Nicolson (CN) FDTD scheme, the splitting error in ADI-FDTD can be reduced systematically. Numerical examples are used to illustrate the improved accuracy of this method.  相似文献   
129.
Widely tunable bottom-emitting vertical-cavity SOAs   总被引:1,自引:0,他引:1  
We present bottom-emitting tunable vertical-cavity semiconductor optical amplifiers (VCSOAs) with an effective wavelength tuning range of >20 nm. These devices utilize a high reflectivity micromechanically tunable Bragg mirror as the back reflector. Compared with our first generation tunable VCSOAs, the bottom-emitting devices exhibit a two-fold increase in the effective tuning range as well as a five-fold reduction in the required tuning voltage.  相似文献   
130.
In this paper, RF noise in 0.18-mum NMOSFETs concerning the contribution of carrier heating and hot carrier effect is characterized and analyzed in detail via a novel approach that modulates the channel carrier heating and number of hot carriers using body bias. We confirm qualitatively a negligible role of hot carrier effect on the channel noise in deep-submicrometer MOSFETs. For a device under reverse body bias (Vb), even though the increase in hot carrier population is clearly characterized by dc measurements, the device high-frequency noise is found to be irrelevant to the increase in the channel hot carriers. Experimental results show that the high-frequency noise is slightly reduced with the increase in |Vb|, and can be qualitatively explained by secondary effects such as the suppression of nonequilibrium channel noise and substrate induced noise. The reduction of NFmin and Rn with the increase in |Vb| may provide a possible methodology to finely adjust the device high-frequency noise performance for circuit design  相似文献   
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