New Electroweak Model Without a Higgs Particle

A new unified electroweak model is proposed in this paper. In this unified electroweak model, Higgsmechanism is not used, so no Higgs particle exists in the model. In order to keep the masses of intermediate gaugebosons non-zero, two sets of gauge fields will be introduced. In order to introduce symmetry breaking and to help tointroduce the masses of all fields, a vacuum potential is needed. Except for those terms concerning Higgs particle, thefundamental dynamical properties of this model are similar to those of the standard model. And in a proper limit, thismodel will approximately return to the standard model. The purpose of this paper is not to say that the Higgs particledoes not exist in Nature, it is only to prove that, without a Higgs particle, we can also set up a unified electroweak modelwhich is consistent with present experiments.     

On the interaction impedance of the coupled cavity structure

The formula and program for calculating the total and negative first harmonic interaction impedance from the data of “large perturbation measurement” are given. This program is a part of the programs for CCTWT design.     

Multiuser detection for DS-CDMA UWB in the home environment

We demonstrate the effectiveness of multiuser detection for an ultra-wideband (UWB) pulse based direct sequence spread spectrum system using code division multiple access. Extensive simulations were run using channel soundings of the 2-8 GHz band collected in a residential setting and characterized by a high level of multipath fragmentation. We show that the adaptive minimum mean square error (MMSE) multiuser detection (MUD) receivers are able to gather multipath energy and reject intersymbol and interchip interference for these channels to a much greater extent than RAKE receivers with 4 and 8 arms. We also demonstrate the adaptive MMSE is able to reject a narrowband IEEE 802.11a OFDM interferer, even for signal-to-interference ratio as severe as -30 dB. We show the adaptive MMSE exhibits only a 6 dB penalty relative to the single user case for the heavy multi-access interference (number of asynchronous users equal to spreading code length). The practical RAKE receivers were incapable of effectively rejecting either the strong narrowband interference or the heavily loaded wideband interference. Even more moderate levels of interference caused significant degradation in the performance of the practical RAKE receivers.     

第三代短波自动链路建立系统特性分析及仿真实现

分析了第三代短波自动链路建立系统的工作特性及技术特点，并对系统仿真实现的原则及一些细节问题进行了较深入的探讨，同时对仿真实现中涉及的链路质量分析（LQA）算法进行了研究。     

Improvement of RCA transistor using RTA annealing after theformation of interfacial oxide

A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm². The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively     

Thermodynamic modeling of native point defects and dopants of GaN semiconductors

A thermodynamic modeling of GaN was carried out to describe the thermodynamic behavior of native defects, dopants, and carriers (free electrons and holes) in GaN semiconductors. The compound energy model (CEM) was used. An unintentionally doped GaN was taken as an example. Oxygen was introduced into the model as the unintentionally doped impurity, according to the practical experimental phenomena. The energies of component compounds in the model were defined based on the results of the ab initio calculations and adjusted to fit experimental data. The thermodynamic properties of the defects and the oxygen doped were calculated to show the facility of the model.     

A network management architecture for robust packet routing in meshoptical access networks

We describe an architecture for an optical local area network (LAN) or metropolitan area network (MAN) access. The architecture allows for bandwidth sharing within a wavelength and is robust to both link and node failures. The architecture can be utilized with an arbitrary, link-redundant mesh network (node-redundancy is necessary only to handle all node failures), and assumes neither the use of a star topology nor the ability to embed such a topology within the physical mesh. Reservation of, bandwidth is performed in a centralized fashion at a (replicated) head end node, simplifying the implementation of complex sharing policies relative to implementation on a distributed set of routers. Unlike a router, however, the head end does not take any action on individual packets and, in particular, does not buffer packets. The architecture thus avoids the difficulties of processing packets in the optical domain while allowing for packetized shared access of wavelengths. We describe the route construction scheme and prove its ability to recover from single link and single node failures, outline a flexible medium access protocol and discuss the implications for implementing specific policies, and propose a simple implementation of the recovery protocol in terms of state machines for per-link devices     

Polytetrafluoroethylene and metal structure convective-flow CO laser

A convective flow CO laser composed of polytetrafluoroethylene discharge tubes, nickel–chromium steel components, a cupric heat exchanger and other components is described. Operating in liquid nitrogen condition, output power of 60 W has been obtained from a non-selective cavity.     

Analysis on the effectiveness of the 20-H rule for printed-circuit-board layout to reduce edge-radiated coupling

This paper presents the quantified study of the electromagnetic radiation mechanism of the 20-H rule using a numerical approach that has not yet been systematically addressed. The 20-H rule is a rule-of-thumb layout technique recommended to minimize radiated fields propagating from the edges of a printed circuit board (PCB) coupling onto nearby structures. Propagating electromagnetic fields may corrupt adjacent cable assemblies, sheet metal enclosures, and aperture openings. The magnitude of this design rule is investigated using the full-wave finite-difference time-domain (FDTD) method. An analysis on whether benefits exist from use of this rule is examined and under what conditions the rule is valid when correctly implemented. The purpose of this paper is to provide insight into the validity of the 20-H rule, recognizing that every PCB will have different simulation results. FDTD is used to capture a snapshot view of field propagation. This view allows one to determine the validity of the 20-H rule at a single point of time within a dynamic structure and what may be expected when digital components are finally added to a PCB assembly, which generally negates simulated results.     

An experimental study of carrier heating on channel noise in deep-submicrometer NMOSFETs via body bias

In this paper, RF noise in 0.18-mum NMOSFETs concerning the contribution of carrier heating and hot carrier effect is characterized and analyzed in detail via a novel approach that modulates the channel carrier heating and number of hot carriers using body bias. We confirm qualitatively a negligible role of hot carrier effect on the channel noise in deep-submicrometer MOSFETs. For a device under reverse body bias (V_b), even though the increase in hot carrier population is clearly characterized by dc measurements, the device high-frequency noise is found to be irrelevant to the increase in the channel hot carriers. Experimental results show that the high-frequency noise is slightly reduced with the increase in |V_b|, and can be qualitatively explained by secondary effects such as the suppression of nonequilibrium channel noise and substrate induced noise. The reduction of NF_min and R_n with the increase in |V_b| may provide a possible methodology to finely adjust the device high-frequency noise performance for circuit design