基于拓扑绝缘体异质结的宽带太赫兹探测器

二维材料中的新量子态对凝聚态物理和现代光电器件的发展具有重要意义。然而具有宽带、室温和快速响应能力的太赫兹光电探测技术,由于缺乏暗电流和光吸收之间的最佳平衡,仍然面临着巨大的挑战。在这项研究中,作者合成了新型拓扑绝缘体材料GeBi₄Te₇,并搭建了其与Bi₂Te₃的范德华异质结,以实现高灵敏度的太赫兹光电探测器。在平面金属-材料-金属结构中实现了在室温下将低光子能量太赫兹波段直接转化为光电流。结果表明,基于Bi₂Te₃-GeBi₄Te₇的太赫兹光电探测器能够实现0.02～0.54 THz的宽谱探测,且具有很高的光响应率(在0.112、0.27、0.5 THz下分别为592 V·W^-1、203 V·W^-1、40 V·W^-1),响应时间小于6μs。值得注意的是,它被用于高频太赫兹的成像应用演示。这些结果为Bi₂Te₃     

InAs基范德华异质结界面电荷转移特性第一性原理计算的研究进展

由低维InAs材料和其他二维层状材料堆叠而成的垂直范德华异质结构在纳米电子、光电子和量子信息等新兴领域中应用广泛。探索跨结界面的电荷转移机制对于全面理解该类器件的非凡特性至关重要。第一性原理计算在揭示界面电荷转移特性与各种能量稳定型InAs基范德华异质结的电、光、磁等原理物理特性和器件性能变化之间的内在关系方面发挥着不可比拟的作用。文中梳理、总结和探讨了近年来InAs基范德华异质结间界面电荷转移特性的理论研究工作与潜在的功能应用,提出在理论方法和计算精度方面大力发展第一性原理计算的几个途径,为更好地开展InAs基范德华异质结的基础科学研究和应用器件设计提供可借鉴的量化研究基础。     

一种低旁瓣非均匀圆形活塞换能器的设计

针对水声换能器的指向性旁瓣级问题,该文提出了一种低旁瓣非均匀圆形活塞平面水声换能器。该换能器在均匀圆形活塞换能器的基础上,采取去双环分布方法去除均匀圆形活塞换能器部分压电相体积,改变换能器结构,实现了抑制旁瓣的效果。以均匀连续平面活塞阵为基础,该文推导了去双环圆形平面活塞阵指向性函数,并采用Matlab对该指向性函数求解,分析两个环的位置和宽度随换能器指向性最大旁瓣级的变化规律,根据优化结果确定了换能器的最优尺寸。通过有限元仿真分析表明,该去双环圆形活塞换能器指向性最大旁瓣级为-25.3 dB,与均匀圆形活塞换能器相比,最大旁瓣级降低了8.3 dB,实现了旁瓣抑制,有效降低了最大旁瓣级。     

白光LEDs用(Ba/Sr/Ca)2.9Ce(PO4)3:0.1Eu2+的发光特性

采用高温固相法制备了(Ba/Sr/Ca)_2.9Ce(PO₄)₃:0.1Eu²⁺系列荧光粉,研究了材料的发光特性。在400 nm光激发下,增大x值,Ba_2.9-xSr_xCe(PO₄)₃:0.1Eu²⁺的主发射峰由515 nm红移至540 nm,色坐标从(0.312,0.607)变到(0.376,0.580);随着y值的增大,Ba_2.9-yCa_yCe(PO₄)₃:0.1Eu²⁺的主发射峰由515 nm红移到553 nm,色坐标从(0.312,0.607)变到(0.427,0.535),随z值的增大,Sr_2.9-zCa_zCe(PO₄)₃:0.1Eu²⁺的主发射峰值由540 nm红移...     

差分无源器件的设计

在现代无线通信系统中,差分电路相比单端电路而言具有更强的抗干扰能力,因此受到了国内外学者的广泛关注。文章介绍了混合模散射参数、差分器件设计中常用的微带线和缝隙线及两种传输线之间的相互转化,并介绍了基于微带线和缝隙线转换结构的两种全差分带通滤波器。两种滤波器分别实现了多频段和宽带的差模传输特性以及宽带的共模抑制特性。文章还给出了差分耦合器、差分功分器和差分天线等差分器件的设计。仿真与实测结果吻合较好,验证了设计方法的正确性。     

Self-Adhesive Polydimethylsiloxane Foam Materials Decorated with MXene/Cellulose Nanofiber Interconnected Network for Versatile Functionalities

Polydimethylsiloxanes (PDMS) foam as one of next-generation polymer foam materials shows poor surface adhesion and limited functionality, which greatly restricts its potential applications. Fabrication of advanced PDMS foam materials with multiple functionalities remains a critical challenge. In this study, unprecedented self-adhesive PDMS foam materials are reported with worm-like rough structure and reactive groups for fabricating multifunctional PDMS foam nanocomposites decorated with MXene/cellulose nanofiber (MXene/CNF) interconnected network by a facile silicone foaming and dip-coating strategy followed by silane surface modification. Interestingly, such self-adhesive PDMS foam produces strong interfacial adhesion with the hybrid MXene/CNF nano-coatings. Consequently, the optimized PDMS foam nanocomposites have excellent surface super-hydrophobicity (water contact angle of ≈159^o), tunable electrical conductivity (from 10⁻⁸ to 10 S m⁻¹), stable compressive cyclic reliability in both wide-temperature range (from −20 to 200 ^oC) and complex environments (acid, sodium, and alkali conditions), outstanding flame resistance (LOI value of >27% and low smoke production rate), good thermal insulating performance and reliable strain sensing in various stress modes and complex environmental conditions. It provides a new route for the rational design and development of advanced PDMS foam nanocomposites with versatile multifunctionalities for various promising applications such as intelligent healthcare monitoring and fire-safe thermal insulation.     

Selenium Substitution in Bithiophene Imide Polymer Semiconductors Enables High-Performance n-Type Organic Thermoelectric

Designing n-type polymers with high electrical conductivity remains a major challenge for organic thermoelectrics (OTEs). Herein, by devising a novel selenophene-based electron-deficient building block, the pronounced advantages of selenium substitution in simultaneously enabling advanced n-type polymers is demonstrated with high mobility (≈2 orders of magnitude higher versus their sulfur-based analogues due to both intensified intra- and inter-chain interactions) and much improved n-doping efficiency (enabled by the largely lowered LUMO level with a ≈0.2 eV margin) of the resulting polymers. Via side chain optimization and donor engineering, the selenium-substituted polymer, f-BSeI2TEG-FT, achieves a highest conductivity of 103.5 S cm⁻¹ and power factor of 70.1 µW m⁻¹ K⁻², which are among the highest values reported in literature for n-type polymers, and f-BSeI2TEG-FT greatly outperformed the sulfur-based analogue polymer by 40% conductivity increase. These results demonstrate that selenium substitution is a very effective strategy for improving n-type performance and provide important structure-property correlations for developing high-performing n-type OTE materials.     

Vapor Phase Growth of Centimeter-Sized Band Gap Engineered Cesium Lead Halide Perovskite Single-Crystal Thin Films with Color-tunable Stimulated Emission

Single crystal metal halide perovskites thin films are considered to be a promising optical, optoelectronic materials with extraordinary performance due to their low defect densities. However, it is still difficult to achieve large-scale perovskite single-crystal thin films (SCTFs) with tunable bandgap by vapor-phase deposition method. Herein, the synthesis of CsPbCl_3(1–x)Br_3x SCTFs with centimeter size (1 cm × 1 cm) via vapor-phase deposition is reported. The Br composition of CsPbCl_3(1–x)Br_3x SCTFs can be gradually tuned from x = 0 to x = 1, leading the corresponding bandgap to change from 2.29 to 2.91 eV. Additionally, an low-threshold (≈23.9 µJ cm⁻²) amplified spontaneous emission is achieved based on CsPbCl_3(1–x)Br_3x SCTFs at room temperature, and the wavelength is tuned from 432 to 547 nm by varying the Cl/Br ratio. Importantly, the high-quality CsPbCl_3(1–x)Br_3x SCTFs are ideal optical gain medium with high gain up to 1369.8 ± 101.2 cm⁻¹. This study not only provides a versatile method to fabricate high quality CsPbCl_3(1–x)Br_3x SCTFs with different Cl/Br ratio, but also paves the way for further research of color-tunable perovskite lasing.     

一种用于心电信号采集的LCADC

设计了一种适用于心电信号处理的连续时间LCADC电路。电路去掉了传统电压模式的DAC模块,采用了N-bit电流舵DAC,解决了传统电压模式DAC存在的电容漏电问题。该电路包括一个电压至电流转换器、 7-bit电流舵DAC、电平交叉检测模块以及偏移标准补偿模块。 电路采用SMIC 0.18 μm CMOS工艺设计,电源电压为1 V。仿真结果表明,整体电路功耗为8.1 μW @500 Hz。通过MATLAB对数据进行处理,SNDR为53.8 dB @500 Hz,ENOB达到了8.64 bit,输入信号范围内SNDR范围为52.8~63.6 dB,电路功耗范围为7.3~8.5 μW。该电路适用于低频心电信号的采集。     

700MHz频段5G网络性能分析与建设方案建议

5G网络开启移动互联网的新阶段,有力推动工业自动化与社会发展。为了更好地促进5G网络的建设与发展,对700 MHz频段应用于5G网络的需求进行分析,并基于外场实地测试的技术结论对中国移动700 MHz频段5G网络组网与建设方案进行探讨,指导5G基站部署及天线参数配置。