The U.S. role in global internet governance

Who should control the Internet? A dozen years after the Internet became a mass medium, this issue has continued to grow in urgency, becoming white hot in fall 2005. At the September 2005 preparatory meeting for the UN World Summit on the Information Society (WSIS), a coalition of countries criticized the United States' unilateral control of the Internet's domain name system (DNS) and proposed the establishment of a multinational Council to supervise it. This proposal emerged from the Final Report of the UN Working Group on Internet Governance. Researchers from the Internet Governance Project, a university-based consortium for policy analysis, have concluded that the United States should internationalize governance of the Internet, but in a way that avoids intrusive, centralized control.     

End-to-End QoS for Video Delivery Over Wireless Internet

Providing end-to-end quality of service (QoS) support is essential for video delivery over the next-generation wireless Internet. We address several key elements in the end-to-end QoS support, including scalable video representation, network-aware end system, and network QoS provisioning. There are generally two approaches in QoS support: the network-centric and the end-system centric solutions. The fundamental problem in a network-centric solution is how to map QoS criterion at different layers respectively, and optimize total quality across these layers. We first present the general framework of a cross-layer network-centric solution, and then describe the recent advances in network modeling, QoS mapping, and QoS adaptation. The key targets in end-system centric approach are network adaptation and media adaptation. We present a general framework of the end-system centric solution and investigate the recent developments. Specifically, for network adaptation, we review the available bandwidth estimation and efficient video transport protocol; for media adaptation , we describe the advances in error control, power control, and corresponding bit allocation. Finally, we highlight several advanced research directions.     

An investigation on planar dielectric light collectors for illumination and solar energy applications

In this paper the performances of inhomogeneous dielectric slabs as solar light collectors for both illumination and solar energy applications are analysed.     

Vascular morphology by three-dimensional magnetic resonance imaging

A three-dimensional examination of blood vessels is provided using MR data from seven cases. The vascular surfaces are constructed with an algorithm that automatically follows the selected artery or vein and generates a projected three-dimensional gradient shaded image. Fast 3DFT pulse sequences were optimized to enhance the time-of-flight contrast of the intravascular region. By increasing the surface threshold value in a three-dimensional head study, the flesh of a patient's face was peeled away to demonstrate the superfacial temporal artery. Gated cardiac images show the great vessels and cardiac chambers. A three-dimensional view of the aorta shows an irregular surface in the vicinity of an adrenal tumor. 3D MR exams provide a non-invasive technique for assessing vascular morphology in a clinical setting.     

ESD–RF co-design methodology for the state of the art RF-CMOS blocks

This paper describes an approach to design ESD protection for integrated low noise amplifier (LNA) circuits used in narrowband transceiver front-ends. The RF constraints on the implementation of ESD protection devices are relaxed by co-designing the RF and the ESD blocks, considering them as one single circuit to optimise. The method is applied for the design of 0.25 μm CMOS LNA. Circuit protection levels higher than 3 kV HBM stress are achieved using conventional highly capacitive ggNMOS snapback devices. The methodology can be extended to other RF-CMOS circuits requiring ESD protection by merging the ESD devices in the functionality of the corresponding matching blocks.     

Search for a reliable methodology for PSD determination based on a combined molecular simulation-regularization-experimental approach: The case of PHTS materials

We present here a methodology for searching a robust pore size distribution (PSD) for adsorbent materials. The method is based on a combination of individual adsorption isotherms, obtained from Grand Canonical Monte Carlo simulations, a regularization procedure to invert the adsorption integral equation (Tikhonov regularization solved by singular value decomposition), and the needed experimental adsorption isotherm. The selection of several parameters from the available choices to start the procedure are discussed here: the size of the kernel (number of individual pores and number of experimental adsorption points to be included), the fulfillment of the Discrete Picard condition, and the L-curve criteria, all leading to find a reliable and robust PSD. The procedure is applied to plugged hexagonal templated silicas (PHTS), synthesized, and characterized in our laboratory.     

An AFM, XPS and electrochemical study of molecular electroactive monolayers formed by wet chemistry functionalization of H-terminated Si(1 0 0) with vinylferrocene

Molecular electroactive monolayers have been produced from vinylferrocene (VFC) via light-assisted surface anchoring to H-terminated n- and p-Si(1 0 0) wafers prepared via wet chemistry, in a controlled atmosphere. The resulting Si-C bound hybrids have been characterized by means of XPS and AFM. Their performance as semiconductor functionalized electrodes and their surface composition have been followed by combining electrochemical and XPS measurements on the same samples, before and after use in an electrochemical cell. White-light photoactivated anchoring at short (1 h) exposure times has resulted in a mild route, with a very limited impact on the initial quality of the silicon substrate. In fact, the functionalized Si surface results negligibly oxidized, and the C/Fe atomic ratio is close to the value expected for the pure molecular species. The VFC/Si hybrids can be described as (η⁵-C₅H₅)Fe²⁺(η⁵-C₅H₄)-CH₂-CH₂-Si species, on the basis of XPS results. Electrochemical methods have been applied in order to investigate the role played by a robust, covalent Si-C anchoring mode towards substrate-molecule electronic communication, a crucial issue for a perspective development of molecular electronics devices. The response found from cyclic voltammograms for p-Si(1 0 0) functionalized electrodes, run in the dark and under illumination, has shown that the electron transfer is not limited by the number of charge carriers, confirming the occurrence of electron transfer via the Si valence band. The hybrids have shown a noticeable electrochemical stability and reversibility under cyclic voltammetry (cv), and the trend in peak current intensity vs. the scan rate was linear. The molecule-Si bond is preserved even after thousands of voltammetric cycles, although the surface coverage, evaluated from cv and XPS, decreases in the same sequence. An increasingly larger surface concentration of Fe³⁺ at the expenses of Fe²⁺ redox centers has been found at increasing number of cv’s, experimentally associated with the growth of silicon oxide. Surface SiO⁻ groups from deprotonated silanol termination, induced by the electrochemical treatments, are proposed as the associated counterions for the Fe³⁺ species. They could be responsible for the observed decrease in the electron transfer rate constant with electrode ageing.     

Piezoresistive Behavior Study on Finger‐Sensing Silicone Rubber/Graphite Nanosheet Nanocomposites

A novel finger‐sensing nanocomposite with remarkable and reversible piezoresistivity is successfully fabricated by dispersing homogeneously conductive graphite nanosheets (GNs) in a silicone rubber (SR) matrix. Because of the high aspect ratio of the graphite nanosheets, the nanocomposite displays a very low percolation threshold. The SR/GN nanocomposite with a volume fraction of conductive nanosheets closest to that for the percolation threshold presents a sharp positive‐pressure coefficient effect of the resistivity under very low pressure, namely, in the finger‐pressure range (0.3–0.7 MPa), whereby the abrupt transition could be attributed to compressive‐stress‐induced deformation of the conducting network. The super‐sensitive piezoresistive behavior of the nanocomposite is accounted for by an extension of the tunneling conduction theory which provides a good approximation to the piezoresistive effect.