Impact of lead-free soldering processes on the performance of signal relay contacts

Various legislations, rules and regulations in Europe [Restrictions of the use of certain hazardous substances in electrical and electronic equipment (ROHS)] and Japan (Recycling Law for Home Electric Appliances) have either targeted restrictions or a full ban on the use of lead, to be enforced from 2001, 2005, and 2006 onwards. Next to these regulations, marketing arguments are becoming more and more important for so called "GREEN" products. Up to now, mainly tin-lead alloys have been used in electronics. The process temperatures usually applied have been in the range of 230/spl deg/C. All currently discussed lead-free alternatives for professional electronics need process temperatures which are at least 30/spl deg/C higher. In addition, the process duration is significantly longer. The combination of higher process temperatures and longer duration together results in a significant thermal stress on the precision mechanics of the relay. In order to guarantee proper functioning of the relay after the solder process with maximum process temperatures of 255/spl deg/C, the dimensional changes of the plastic parts must be less than a few micrometers in order to guarantee stable contact forces. The outgassing of the used insulating and sealing materials must be minimal in order not to pollute or contaminate the contacts. With the lead-free version of the IM relay, an identical performance and the same reliability during electrical and climatic endurance tests can be expected, even though relays were processed with typical lead-free soldering processes with temperatures up to 255/spl deg/C.     

Alternating-direction implicit (ADI) formulation of the finite-difference time-domain (FDTD) method: algorithm and material dispersion implementation

The alternating-direction implicit finite-difference time-domain (ADI-FDTD) technique is an unconditionally stable time-domain numerical scheme, allowing the /spl Delta/t time step to be increased beyond the Courant-Friedrichs-Lewy limit. Execution time of a simulation is inversely proportional to /spl Delta/t, and as such, increasing /spl Delta/t results in a decrease of execution time. The ADI-FDTD technique greatly increases the utility of the FDTD technique for electromagnetic compatibility problems. Once the basics of the ADI-FDTD technique are presented and the differences of the relative accuracy of ADI-FDTD and standard FDTD are discussed, the problems that benefit greatly from ADI-FDTD are described. A discussion is given on the true time savings of applying the ADI-FDTD technique. The feasibility of using higher order spatial and temporal techniques with ADI-FDTD is presented. The incorporation of frequency dependent material properties (material dispersion) into ADI-FDTD is also presented. The material dispersion scheme is implemented into a one-dimensional and three-dimensional problem space. The scheme is shown to be both accurate and unconditionally stable.     

Analytical multipoint moment matching reduction of distributed thermal networks

In this paper, the multipoint moment matching method for model order reduction of discretized linear thermal networks is extended to distributed linear thermal networks. As a result, from the analytical canonical forms of distributed linear thermal networks, reduced thermal networks are derived analytically. This direct construction of the reduced network, from the exact analytical solutions, avoids the inevitable inaccuracies inherent in conventional surface and volume meshing. It allows nearly exact reduced thermal network construction by domain decomposition for arbitrarily complicated structures.     

High-frequency analysis of the Ellipticus antenna

Efficient numerical solution techniques have been developed and used to examine the electromagnetic fields that can be developed in the working volume of the CW Ellipticus antenna operated at frequencies from 100 kHz to 1 GHz. An exponentially tapered transition section is designed to obtain the desired illumination pattern in the working volume. The input transition section is needed for impedance matching and to drive efficiently the Ellipticus antenna. A parametric study is performed to ascertain the performance of the Ellipticus antenna for frequencies up to 1 GHz     

Wideband microstrip array antenna with sidelobe cancellationchannels

An antenna array for wideband operation (up to 70%) is presented. The structure has low windloading area and consists of parallel printed circuit boards (PCB) with microstrip dipoles, feed network and metal fences placed between the PCBs. The low profile, low weight antenna array forms the main beam and three difference patterns for sidelobe cancellation. Experimental results are compared with calculations for both microstrip dipole and array     

High-performance automatic target recognition through data-specificVLSI

Under the Mojave configurable computing project, we have developed a system for achieving high performance on an automatic target recognition (ATR) application through the use of configurable computing technology. The ATR system studied here involves real-time image acquisition from a synthetic aperture radar (SAR). SAR images exhibit statistical properties which can be used to improve system performance. In this paper, the Mojave configurable computing system uses field programmable gate arrays (FPGA's) to implement highly specialized circuits while retaining the flexibility of programmable components. A controller sequences through a set of specialized circuits in response to real-time events. Computer-aided design (CAD) tools have been developed to support the automatic generation of these specialized circuits. The resulting configurable computing system achieves a significant performance advantage over the existing solution, which is based on application specific integrated circuit (ASIC) technology     

An easy-to-use mismatch model for the MOS transistor

In this paper, a physics-based mismatch model is presented. It is demonstrated on a 0.18-/spl mu/m technology that a simple mismatch model can still be used to characterize deep-submicron technologies. The accuracy of the model is examined and found to be within 20% in the strong inversion region. Bulk bias dependence is modeled in a physical way. To extract the mismatch parameters, a weighted fit is introduced. It is shown that the width and length dependence of the mismatch parameters is given by the Pelgrom model.     

Cryptanalysis of Polly Cracker

An attack on the public key cryptosystem Polly Cracker is described, that reveals the complete secret key σ ∈ F_q ⁿ by means of n (nonadaptively) chosen "fake" ciphertexts     

Fabrication of 1.55 μm VCSELs on Si using metallic bonding

Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication