Low-energy ion-assisted control of interfacial structures in metallic multilayers

A molecular dynamics method has been used to simulate the argon ion-assisted deposition of Cu/Co/Cu multilayers and to explore ion beam assistance strategies that can be used during or after the growth of each layer to control interfacial structures. A low-argon ion energy of 5–10 eV was found to minimize a combination of interfacial roughness and interlayer mixing (alloying) during the ion-assisted deposition of multilayers. However, complete flattening with simultaneous ion assistance could not be achieved without some mixing between the layers when a constant ion energy approach was used. It was found that multilayers with lower interfacial roughness and intermixing could be grown either by modulating the ion energy during the growth of each metal layer or by utilizing ion assistance only after the completion of each layers deposition. In these latter approaches, relatively high-energy ions could be used since the interface is buried and less susceptible to intermixing. The interlayer mixing dependence upon the thickness of the over layer has been determined as a function of ion energy.     

Sigma function solution of the initial value problem for Somos 5 sequences

The Somos 5 sequences are a family of sequences defined by a fifth order bilinear recurrence relation with constant coefficients. For particular choices of coefficients and initial data, integer sequences arise. By making the connection with a second order nonlinear mapping with a first integral, we prove that the two subsequences of odd/even index terms each satisfy a Somos 4 (fourth order) recurrence. This leads directly to the explicit solution of the initial value problem for the Somos 5 sequences in terms of the Weierstrass sigma function for an associated elliptic curve.

     

Bis[3‐(trimethyl­silyl)prop­yl] ethyl­enebisphospho­nate,H2DTMSP[EBP]

The title compound (H₂DTMSP[EBP]), C₁₄H₃₆O₆P₂Si₂, was crystallized by the slow evaporation of a solution in a 20:1 mixture of pentane and acetone. The H₂DTMSP[EBP] mole­cule lies about an inversion center. In the solid state, the mol­ecule exists in an anti configuration, with the mol­ecular backbone C—C bond located on an inversion center. The compound exists in the solid state as hydrogen‐bonded infinite sheets in the ab plane, unlike the methyl­ene analogue, which exists as hydrogen‐bonded infinite chains, demonstrating an `even–odd' effect of the length of the backbone alkyl chain.     

All-fiber electrooptical mode-locking and tuning

Active mode-locking of a fiber laser with an all-fiber electrooptic modulator is demonstrated. A 1.4-V driving signal was used, creating subnanosecond single pulses at the fundamental frequency of the cavity (12 MHz). The modulator was a packaged Mach-Zehnder interferometer incorporating a poled twin-hole fiber in one of the arms. The switching voltage was 230 V at 1550 nm, with extinction ratio /spl sim/20 dB. The interferometer could be electrooptically tuned by 3.5 nm.     

A generalization of consecutive-k-out-of-n:Fsystems

A linear (m, n)-lattice system consists of m ·n elements arranged like the elements of a (m ,n)-matrix, i.e. each of the m rows includes m elements, and each of the n columns includes m elements. A circular (m,n)-lattice system consists of m circles (centered at the same point) and n rays. The intersections of the circle and the rays represent the elements, i.e. each of the circles includes n elements and each of the rays has m elements. A (linear or circular) (m, n)-lattice system is a (linear or circular) connected-X-out-of-(m,n):F lattice system if it fails whenever at least one subset of connected failed components occurs which includes failed components connected in the meaning of connected-X. The paper presents some practical examples and the reliability formulas of simple systems using results of consecutive-k-out-of-n:F systems     

High-breakdown-voltage AlSbAs/InAs n-channel field-effecttransistors

InAs channel field-effect transistors of 1-μm gate length were grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 were observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to those of GaAs-based devices and are the highest observed for InAs channel devices. The results demonstrate the potential for practical room-temperature operation of InAs FETs     

Relative neighborhood graphs and their relatives

Results of neighborhood graphs are surveyed. Properties, bounds on the size, algorithms, and variants of the neighborhood graphs are discussed. Numerous applications including computational morphology, spatial analysis, pattern classification, and databases for computer vision are described     

Reduction of contact stress by use of relief notches

The photoelastic method is used to investigate the possibility of relieving the large local stresses that develop in the corners of a right angled indenter compressing a semi-infinite body by inducing geometric changes to the indenter/semi-infinite body configuration. It is shown that a circular notch cut along the free edges of the indenter can totally eliminate the large corner stresses. The notch, if placed along the interface edge of the half plane, can reduce the stress concentration, but never eliminate it. The results obtained have wide practical application.