Three-dimensional atom probe study of the segregation behaviour of Ni91Pt9 alloy after sputtering

To investigate local ordering and segregation phenomenon in a Ni91Pt9-alloy after sputtering and annealing a 3D optical atom probe (OAP) has been used. The specimen tips have been prepared from polycrystalline samples. To sputter the samples a separate preparation chamber with a scannable Ar-sputter-gun is connected to the OAP vessel. When necessary, the sample can be electrically heated to induce segregation and cure the altered layer. After a heat treatment of a Ni91 at. %Pt 9 at.% specimen at 1100 K the surface of a (111)-oriented specimen is enriched in platinum by a factor of two in relation to the bulk. The phenomenon of short-range ordering has been investigated on the surface and in the subsurface volume. A 3D reconstruction of this annealed NiPt specimen shows regions with high concentration of platinum that gives an indication at short-range ordering. Uniform sputtering of the tip without a heat treatment induces a decisive depletion of Pt on the surface and the following subatomic layers. The atom-probe results of specimens in thermal equilibrium are in close agreement to further surface sensitive results obtained from Ion Scattering Spectroscopy (ISS) and Auger Electron Spectroscopy (AES).     

Tunable wavelength filters based on nonlinear optical interactionsin semiconductor amplifiers

A novel class of narrow-band tunable wavelength filters is proposed and evaluated. Wavelength selectivity of the proposed filters Is derived from the finite time response of an optical nonlinearity. The nonlinearity is gain saturation in semiconductor optical amplifier structures. The filters are shown to have very narrow passbands tunable over the entire semiconductor gain bandwidth. The key to filter implementation is a device configuration in which the wave-mixing products can be isolated from the amplified inputs. Three integrated optics compatible configurations are considered and shown to have high filter throughputs 34 to 180% and subangstrom bandwidths     

High-Frequency Variations in the Rotation of the Earth

We report here observational results demonstrating that a three-station network of properly distributed VLBI observatories can routinely determine UT1 with a formal standard error of ±0.05 ms of time, in an observing period of 24 h. We also report the results of a three-month series of daily observing sessions of only 1-h duration with a single interferometer, which produced estimates of UT1 with standard errors of ±0.1 ms. The UT1 values obtained from the 1-h observing sessions track smoothly between the points of the 24-h time series, and the combined time series shows that it is not unusual for UT1 to vary by 1-2 ms in periods of several days. Preliminary results of reprocessing the 24-h observing sessions in 2-h segments suggest that variations of 0.4 ms may occur on time scales of only 6-8 h.     

Microprocessor-Based Control of an Ion Beam Deposition System

A microprocessor-based system with 32 A/D, 24 D/A, and 16 ac load controllers, has been designed and built to monitor and control an ion beam thin-film deposition system. The A/D and D/A channels have electrical isolation of 7.5 kV between channels and between input and output. The microprocessor system keeps the ion beam deposition parameters stable for extended periods of operation and it is proposed as a means to greatly simplify switching from one deposition species to another to grow thin multilayer or alloy films.     

Half-bridge inverter using 4H-SiC gate turn-off thyristors

This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm²) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices     

Miscibility of bisphenol-A polycarbonate with poly(methyl methacrylate)

The miscibility of bisphenol-A polycarbonate (PC) with poly(methyl methacrylate) (PMMA) has been reexamined using differential scanning calorimetry (DSC) and optical indications for phase separation on heating, i.e., lower critical solution temperature (LCST) behavior. Various methods have been used to prepare the blends including methylene chloride (CH₂Cl₂) and tetrahydrofuran (THF) solution casting, melt mixing, and precipitation of PC and PMMA simultaneously from THF solution by using the nonsolvents methanol and heptane. It is shown that the resulting phase behavior for PC/PMMA blends is strongly affected by the blend preparation method. However, these blends are miscible over the whole blend composition range (unambiguous single composition-dependent T_g's and LCST behavior) when prepared by precipitation from solution using heptane as the nonsolvent. To the contrary, solution-cast and melt-mixed PC/PMMA blends were all phase separated, which may be attributed to the “solvent” effect and LCST behavior, respectively, not discovered in previous reports. Methanol precipitation does not lead to fully mixed blends, which demonstrates the importance of the choice of nonsolvent when using the precipitation method.     

Low-threshold, high-power zero-order lateral-mode DQW-SCH metal-clad ridge waveguide (AlGa)As/GaAs lasers

Metal-clad ridge waveguide (MCRW), double quantum well, separately confined heterostrucuture (DQW-SCH) lasers have been fabricated having continuous-wave (CW) threshold currents of 10?12 mA and external differential quantum efficiencies of 41?46% per uncoated facet. Light/current characteristics are linear to >70 mW, and zero-order lateral mode operation was measured at 56 mW. The CW burn-off power density is nearly double the best previously reported value.     

WWRF - the Wireless World Research Forum

Third generation mobile radio systems are currently being deployed in different regions of the world. Future systems beyond the third generation are already under discussion in international bodies and forums such as ITU, WWRF and R&D programmes of the European Union and in other regions. These systems will determine the research and standardisation activities in mobile and wireless communication in the next years. Based on experience of the third generation, future systems will be developed mainly from the user perspective with respect to potential services and applications including traffic demands. Therefore, the Wireless World Research Forum was launched in 2001 as a global and open initiative of manufacturers, network operators, SMEs, R&D centres and the academic domain. WWRF is focused on the vision of such systems - the Wireless World-and potential key technologies. This paper describes the international context of activities on systems beyond third generation, the goals, objectives and structure of WWRF, the user perspective as the starting point for a future system design and the key enabling technologies for the Wireless World.