首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   10652篇
  免费   352篇
  国内免费   73篇
化学   6358篇
晶体学   65篇
力学   216篇
数学   1688篇
物理学   2271篇
无线电   479篇
  2023年   49篇
  2022年   145篇
  2021年   274篇
  2020年   203篇
  2019年   279篇
  2018年   274篇
  2017年   250篇
  2016年   410篇
  2015年   321篇
  2014年   362篇
  2013年   732篇
  2012年   667篇
  2011年   777篇
  2010年   542篇
  2009年   477篇
  2008年   679篇
  2007年   607篇
  2006年   537篇
  2005年   513篇
  2004年   444篇
  2003年   361篇
  2002年   315篇
  2001年   165篇
  2000年   167篇
  1999年   153篇
  1998年   106篇
  1997年   93篇
  1996年   146篇
  1995年   123篇
  1994年   104篇
  1993年   101篇
  1992年   96篇
  1991年   63篇
  1990年   48篇
  1989年   45篇
  1988年   25篇
  1987年   33篇
  1986年   37篇
  1985年   42篇
  1984年   40篇
  1983年   28篇
  1982年   37篇
  1981年   34篇
  1980年   13篇
  1979年   19篇
  1978年   20篇
  1977年   19篇
  1975年   17篇
  1974年   9篇
  1973年   12篇
排序方式: 共有10000条查询结果,搜索用时 109 毫秒
841.
842.
Apart from trim loss minimization, there are many other issues concerning cutting processes that arise in real production systems. One of these is related to the number of stacks that need to be opened near the cutting machines. Many researchers have worked in the last years on cutting stock problems with additional constraints on the number of open stacks. In this paper, we address a related problem: the Ordered Cutting Stock Problem (OCSP). In this case, a stack is opened for every new client's order, and it is closed only when all the items of that order are cut. The OSCP has been introduced recently in the literature. Our aim is to provide further insight into this problem. This paper describes three new integer programming formulations for solving it, and an exact algorithm based on column generation, branch-and-bound and cutting planes. We report on computational experiments on a set of random instances. The results show that good lower bounds can be computed quickly, and that optimal solutions can be found in a reasonable amount of time.  相似文献   
843.
844.
845.
Topographical structures were created on the surface of multi-walled carbon nanotube-based coatings deposited on borosilicate glass using the direct laser interference patterning (DLIP) technique. Films made by multi-walled carbon nanotubes (MWNTs) dispersed in antimony-doped tin oxide (ATO) matrix and networks of MWNTs with both low and high adherence to the substrates were irradiated with one single laser pulse. Due to the high absorption coefficient of ATO, the film was completely removed at the interference maxima positions leading to periodic arrays of high quality on macroscopic areas. Additionally, increase of the laser fluence has produced wider ablated regions. Irradiation of high adherent networks of MWNTs produced a periodic porous structure, what has been attributed to the presence of adherence promoters in the film. On the other hand, MWNT networks with low adhesion to the substrate were strongly removed at the interference maxima positions. In this case, however, the fabricated periodic structures presented several defects that result from the poor adherence of the film to the substrate.  相似文献   
846.
847.
848.
Molecular properties following electronic excitation were studied and calculations were performed for the singlet-triplet electronic transitions of carbonyl fluoride, perfluoroacetyl fluoride and perfluoromethyl perfluoroacetate by means of the CNDO/S-CI method. Various approximations were used to evaluate the core Hamiltonian matrix elements.  相似文献   
849.
Fractional integrals and derivatives of Airy functions (Riesz potentials) are considered. For half integrals D −1/2 Ai(x) and D −1/2 Gi(x) explicit representations are found in terms of the products of Airy functions. Here Ai(x) and Gi(x) are the Airy function of the first kind and the Scorer function, respectively. Based on that representations are obtained for all semi-integer derivatives of Ai(x) and Gi(x). Applications to Korteweg–de Vries type equations are provided.   相似文献   
850.
We present a Monte Carlo procedure which, by including the mechanism of generation and recombination from impurity centers, enables us to calculate directly from the simulation the field dependent conductivity for the first time. The reliability of the theoretical model has been checked by comparing numerical results with experiments provided by the Montpellier group and performed on p-Si at different acceptor concentrations and temperatures.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号