Sufficient Utilization of Mn2+/Mn3+/Mn4+ Redox in NASICON Phosphate Cathodes towards High-Energy Na-Ions Batteries

Na superionic conductor of Na₃MnTi(PO₄)₃ only containing high earth-abundance elements is regarded as one of the most promising cathodes for the applicable Na-ion batteries due to its desirable cycling stability and high safety. However, the voltage hysteresis caused by Mn²⁺ ions resided in Na⁺ vacancies has led to significant capacity loss associated with Mn reaction centers between 2.5–4.2 V. Herein, the sodium excess strategy based on charge compensation is applied to suppress the undesirable voltage hysteresis, thereby achieving sufficient utilization of the Mn²⁺/Mn³⁺ and Mn³⁺/Mn⁴⁺ redox couples. These findings indicate that the sodium excess Na_3.5MnTi_0.5Ti_0.5(PO₄)₃ cathode with Ti⁴⁺ reduction has a lowest Mn²⁺ occupation on the Na⁺ vacancies in its initial composition, which can improve the kinetics properties, finally contributing to a suppressed voltage hysteresis. Based on these findings, it is further applied the sodium excess route on a Mn-richer phosphate cathode, which enables the suppressed voltage hysteresis and more reversible capacity. Consequently, this developed Na_3.6Mn_1.15Ti_0.85(PO₄)₃ cathode achieved a high energy density over 380 Wh kg⁻¹ (based on active substance mass of cathode) in full-cell configurations, which is not only superior to most of the phosphate cathodes, but also delivers more application potential than the typical oxides cathodes for Na-ion batteries.     

Bio-Inspired Artificial Fast-Adaptive and Slow-Adaptive Mechanoreceptors With Synapse-Like Functions

Development of artificial mechanoreceptors capable of sensing and pre-processing external mechanical stimuli is a crucial step toward constructing neuromorphic perception systems that can learn and store information. Here, bio-inspired artificial fast-adaptive (FA) and slow-adaptive (SA) mechanoreceptors with synapse-like functions are demonstrated for tactile perception. These mechanoreceptors integrate self-powered piezoelectric pressure sensors with synaptic electrolyte-gated field-effect transistors (EGFETs) featuring a reduced graphene oxide channel. The FA pressure sensor is based on a piezoelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) thin film, while the SA pressure sensor is enabled by a piezoelectric ionogel with the piezoelectric-ionic coupling effect based on P(VDF-TrFE) and an ionic liquid. Changes in post-synaptic current are achieved through the synaptic effect of the EGFET by regulating the amplitude, number, duration, and frequency of tactile stimuli (pre-synaptic pulses). These devices have great potential to serve as artificial biological mechanoreceptors for future artificial neuromorphic perception systems.     

Ultra-Stable and Sensitive Ultraviolet Photodetectors Based on Monocrystalline Perovskite Thin Films

The detection of ultraviolet (UV) radiation with effective performance and robust stability is essential to practical applications. Metal halide single-crystal perovskites (ABX₃) are promising next-generation materials for UV detection. The device performance of all-inorganic CsPbCl₃ photodetectors (PDs) is still limited by inner imperfection of crystals grown in solution. Here wafer-scale single-crystal CsPbCl₃ thin films are successfully grown by vapor-phase epitaxy method, and the as-constructed PDs under UV light illumination exhibit an ultralow dark current of 7.18 pA, ultrahigh ON/OFF ratio of ≈5.22 × 10⁵, competitive responsivity of 32.8 A W⁻¹, external quantum efficiency of 10867% and specific detectivity of 4.22 × 10¹² Jones. More importantly, they feature superb long-term stability toward moisture and oxygen within twenty-one months, good temperature tolerances at low and high temperatures. The ability of the photodetector arrays for excellent UV light imaging is further demonstrated.     

Vapor Phase Growth of Centimeter-Sized Band Gap Engineered Cesium Lead Halide Perovskite Single-Crystal Thin Films with Color-tunable Stimulated Emission

Single crystal metal halide perovskites thin films are considered to be a promising optical, optoelectronic materials with extraordinary performance due to their low defect densities. However, it is still difficult to achieve large-scale perovskite single-crystal thin films (SCTFs) with tunable bandgap by vapor-phase deposition method. Herein, the synthesis of CsPbCl_3(1–x)Br_3x SCTFs with centimeter size (1 cm × 1 cm) via vapor-phase deposition is reported. The Br composition of CsPbCl_3(1–x)Br_3x SCTFs can be gradually tuned from x = 0 to x = 1, leading the corresponding bandgap to change from 2.29 to 2.91 eV. Additionally, an low-threshold (≈23.9 µJ cm⁻²) amplified spontaneous emission is achieved based on CsPbCl_3(1–x)Br_3x SCTFs at room temperature, and the wavelength is tuned from 432 to 547 nm by varying the Cl/Br ratio. Importantly, the high-quality CsPbCl_3(1–x)Br_3x SCTFs are ideal optical gain medium with high gain up to 1369.8 ± 101.2 cm⁻¹. This study not only provides a versatile method to fabricate high quality CsPbCl_3(1–x)Br_3x SCTFs with different Cl/Br ratio, but also paves the way for further research of color-tunable perovskite lasing.     

Recent Progress of Bismuth Effect on All-Inorganic Lead-Free Metal Halide Derivatives: Crystals Structure,Luminescence Properties,and Applications

Bismuth (Bi³⁺)-included lead-free metal halide (LFMH) materials attract much attention in lighting, display, photodetectors, X-ray detectors, and photovoltaic fields, due to the tunable luminescence and optoelectronic performance in response to crystal and electronic structure, morphology, and particle sizes. This review summarizes Bi³⁺-included LFMH materials about their preparation approach, crystal and electronic structure properties, luminescence performance, and emerging applications. Notably, Bi³⁺ ions not only can act as framework cation to construct stable LFMH structure, but can also incorporate into LFMH materials as activators or sensitizers to generate remarkable luminescence tuning and band engineering. The Bi³⁺ effect on the luminescence and optoelectronic properties of LFMH materials, including, promotion of exciton localization, enhancement of light absorption in near-ultraviolet region, action as sensitizer ions to transfer energy to rare earth or transition metal ions and emission of highly-efficient light is systematically summarized. The proposed structure-luminescence relationship offers guidance for the optimization of current Bi³⁺-included LFMH materials and the exploitation of new LFMH derivatives.     

Diamond semiconductor and elastic strain engineering

Diamond,as an ultra-wide bandgap semiconductor,has become a promising candidate for next-generation microelec-tronics and optoelectronics due to its numerous advantages over conventional semiconductors,including ultrahigh carrier mo-bility and thermal conductivity,low thermal expansion coefficient,and ultra-high breakdown voltage,etc.Despite these ex-traordinary properties,diamond also faces various challenges before being practically used in the semiconductor industry.This review begins with a brief summary of previous efforts to model and construct diamond-based high-voltage switching diodes,high-power/high-frequency field-effect transistors,MEMS/NEMS,and devices operating at high temperatures.Following that,we will discuss recent developments to address scalable diamond device applications,emphasizing the synthesis of large-area,high-quality CVD diamond films and difficulties in diamond doping.Lastly,we show potential solutions to modulate diamond’s electronic properties by the“elastic strain engineering”strategy,which sheds light on the future development of diamond-based electronics,photonics and quantum systems.     

K3 et formules de Riemann-Hurwitzp-adiques

The well-known formula of Riemann-Hurwitz gives the change of genuses in ann-fold covering of compact connected Riemann surfaces. In Iwasawa theory, there existp-adic analogues which give the change of certain ^±-invariants in ap-extension ofCM number fields. Using functorial and arithmetical properties ofK ₃, we extend such Riemann-Hurwitzp-adic formulas to non-CM fields, assuming some restrictive hypotheses on the capitulation ofK ₂.