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181.
This paper focuses on a class of robot manipulators termed "continuum" robots - robots that exhibit behavior similar to tentacles, trunks, and snakes. In previous work, we studied details of the mechanical design, kinematics, path-planning and small-deflection dynamics for continuum robots such as the Clemson "tentacle manipulator". In this paper, we discuss the dynamics of a planar continuum backbone section, incorporating a large-deflection dynamic model. Based on these dynamics, we formulate a vibration-damping setpoint controller, and include experimental results to illustrate the efficacy of the proposed controller. 相似文献
182.
详细分析了终端对话音业务和新业务的影响。在分析终端对话音业务的影响时从用户和终端两方面进行了阐述,指明为了进一步提高用户敷和砖络的使用率,运营商在进行话音营销对应逐渐将工作重点适当转向农村市场。也从对个人和行业用户的影响两方面阐明了终端对新业务的影响。 相似文献
183.
分析了韩国、日本及国内运营商手机游戏业务的发展状况.探讨了手机游戏业务的模式.论述了该业务的战略定位和市场前景。从地区提供给移动通信市场对外部环境、产业链的准备是否充分以及运营商内部的资源和运营状况等三个方面阐明了手机游戏业务发展的关键因素。 相似文献
184.
Javier Ramírez Antonio García Uwe Meyer-Bäse Fred Taylor Antonio Lloris 《The Journal of VLSI Signal Processing》2003,33(1-2):171-190
Currently there are design barriers inhibiting the implementation of high-precision digital signal processing (DSP) objects with field programmable logic (FPL) devices. This paper explores overcoming these barriers by fusing together the popular distributed arithmetic (DA) method with the residue number system (RNS) for use in FPL-centric designs. The new design paradigm is studied in the context of a high-performance filter bank and a discrete wavelet transform (DWT). The proposed design paradigm is facilitated by a new RNS accumulator structure based on a carry save adder (CSA). The reported methodology also introduces a polyphase filter structure that results in a reduced look-up table (LUT) budget. The 2C-DA and RNS-DA are compared, in the context of a FPL implementation strategy, using a discrete wavelet transform (DWT) filter bank as a common design theme. The results show that the RNS-DA, compared to a traditional 2C-DA design, enjoys a performance advantage that increases with precision (wordlength). 相似文献
185.
A novel super-multi-fibre planar lightwave circuit (PLC) connector, designed to connect tens of optical fibres and a PLC for super-multichannel PLC-based optical modules with a receptacle interface, is proposed. This connector employs an angled connection instead of a PC connection. A 0.127 mm pitch 32-fibre connector is also demonstrated, which exhibits low connection and high return losses. 相似文献
186.
L. Sheeney‐Haj‐Ichia S. Pogorelova Y. Gofer I. Willner 《Advanced functional materials》2004,14(5):416-424
Three different configurations of Au‐nanoparticle/CdS‐nanoparticle arrays are organized on Au/quartz electrodes for enhanced photocurrent generation. In one configuration, Au‐nanoparticles are covalently linked to the electrode and the CdS‐nanoparticles are covalently linked to the bare Au‐nanoparticle assembly. The resulting photocurrent, φ = 7.5 %, is ca. 9‐fold higher than the photocurrent originating from a CdS‐nanoparticle layer that lacks the Au‐nanoparticles, φ = 0.8 %. The enhanced photocurrent in the Au/CdS nanoparticle array is attributed to effective charge separation of the electron–hole pair by the injection of conduction‐band electrons from the CdS‐ to the Au‐nanoparticles. Two other configurations involving electrostatically stabilized bipyridinium‐crosslinked Au/CdS or CdS/Au nanoparticle arrays were assembled on the Au/quartz crystal. The photocurrent quantum yields in the two systems are φ = 10 % and φ = 5 %, respectively. The photocurrents in control systems that include electrostatically bridged Au/CdS or CdS/Au nanoparticles by oligocationic units that lack electron‐acceptor units are substantially lower than the values observed in the analogous bipyridinium‐bridged systems. The enhanced photocurrents in the bipyridinium‐crosslinked systems is attributed to the stepwise electron transfer of conduction‐band electrons to the Au‐nanoparticles by the bipyridinium relay bridge, a process that stabilizes the electron–hole pair against recombination and leads to effective charge separation. 相似文献
187.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献
188.
H.S. Seo Y.G. Choi B.J. Park D.H. Cho K.H. Kim 《Photonics Technology Letters, IEEE》2003,15(9):1198-1200
A flat signal gain over in the entire C- and L-bands by erbium (Er) ions' radiative transition and stimulated Raman scattering in an Er-doped germano-silica fiber can be obtained if proper values of the concentration of Er and background loss in a fiber core are obtained during the fiber fabrication process. The optimized conditions for the flat C- and L-band gain are analyzed as functions of Er concentrations. Even for a low-gain value provided by a germano-silica core fiber with a low Er concentration and an optimum fiber length, a relatively low pump is required to obtain the flat gain band. 相似文献
189.
Vassiliou I. Vavelidis K. Georgantas T. Plevridis S. Haralabidis N. Kamoulakos G. Kapnistis C. Kavadias S. Kokolakis Y. Merakos P. Rudell J.C. Yamanaka A. Bouras S. Bouras I. 《Solid-State Circuits, IEEE Journal of》2003,38(12):2221-2231
The drive for cost reduction has led to the use of CMOS technology in the implementation of highly integrated radios. This paper presents a single-chip 5-GHz fully integrated direct conversion transceiver for IEEE 802.11a WLAN systems, manufactured in 0.18-/spl mu/m CMOS. The IC features an innovative system architecture which takes advantage of the computing resources of the digital companion chip in order to eliminate I/Q mismatch and achieve accurately matched baseband filters. The integrated voltage-controlled oscillator and synthesizer achieve an integrated phase noise of less than 0.8/spl deg/ rms. The receiver has an overall noise figure of 5.2 dB and achieves sensitivity of -75 dBm at 54-Mb/s operation, both referred to the IC input. The transmit error vector magnitude is -33 dB at -5-dBm output power from the integrated power-amplifier driver amplifier. The transceiver occupies an area of 18.5 mm/sup 2/. 相似文献
190.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献