Transient behavior of subthreshold characteristics of fullydepleted SOI MOSFETs

It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested     

Electrical properties of N2O/NH3 plasma grownoxynitride on strained-Si

Growth of ultrathin (<100 Å) oxynitride on strained-Si using microwave N₂O and NH₃ plasma is reported. X-ray photoelectron spectroscopy (XPS) results indicate a nitrogen-rich layer at the strained-Si/SiO₂ interface. The electrical properties of oxynitrides have been characterized using a metal-insulator-semiconductor (MIS) structure. A moderately low value of insulator charge density (6.1×10¹⁰ cm^-2) has been obtained for NH₃ plasma treated N₂O oxide sample. Nitrided oxide shows a larger breakdown voltage and an improved charge trapping properties under Fowler-Nordheim (F-N) constant current stress     

Variational principles of magnetostatics of superconductors. I

Fundamental and dual variational principles of magnetostatics of superconductors are formulated. It is shown how test fields can be expressed in terms of vector and scalar potentials. General consequences of the variational magnetostatic formulation are discussed.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 97–102, September, 1991.     

Development of the Bogolyubov-Mitropol'skii method of integral manifolds

A survey is presented of some results relating to the development of the Bogolyubov-Mitropol'skii method of integral manifolds.Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 44, No. 1, pp. 33–46, January, 1992.     

Reliability modeling and performance of variable link-capacitynetworks

The discussion by R. Schanzer (see ibid., vol.44, p.620-1, 1995) tries to correct the algorithms of P.K. Varshney, et al. (see ibid., vol.43, p.378-82, 1994) and K.K Aggarwal (see ibid., vol.37, p.65-9, 1988). But Schanzer doesn't explain why those algorithms have difficulty in calculating the maximum flow. This paper explains the problem and gives a correction of the algorithm so that the basic problem can be solved     

All-optical photonic switches using integrated inverted asymmetricFabry-Perot modulators and heterojunction phototransistors

InGaAs/GaAs(100) multiple-quantum-well-based inverted cavity asymmetric Fabry-Perot modulators are vertically integrated with GaAs/AlGaAs heterojunction phototransistors to yield all-optical photonic switches. The photonic switches using `normally on' modulator pixels exhibit an output on-off ratio of 12:1 with internal optical gain of 4 dB. The photonic switches using `normally off' modulator pixels yield similar contrast and gain, but exhibit intrinsic bistable behavior. The inverted cavity modulators employed permit utilizing the transparency of the GaAs substrate at the operating wavelength and offer advantages for fabricating large arrays for optical signal processing     

A theoretical study of pulsed laser sampling photon amplifiers

Theoretical studies point to significant improvements in the performance of semiconductor laser amplifiers by injecting carriers with pulsed electric currents of sub-nanosecond duration. A pulsed Fabry-Perot amplifier (FPA) is most sensitive to input lightwave at the instant the carrier density is crossing the critical region, and gives a sharply pulsed sampling effect on the input lightwave signal. Compared with a FPA operating at subcritical electron density, the pulsed amplifier gives much higher gain, peak power, and bandwidth. In fact, pulsed operation of a FPA is also expected to give significantly higher gain and about the same peak output power as a traveling wave amplifier. Pulsed operation also improves the performance of a traveling wave amplifier by attenuating its internally reflected waves     

Synthesis of 1-(3-alkyl-2,3-dideoxy-D-pentofuranosyl)uracils with potential anti-HIV activity.

1-(3-Alkyl-2,3-dideoxy-alpha,beta-D-erythro-pentofuranosyl)uracils and 1-(3-alkyl-2,3-dideoxy-alpha,beta-D-threo-pentofuranosyl)uracils have been prepared from (E)-4,5-di-O-acetyl-2,3-dideoxy-aldehydo-D-glycero-pent-2-enose by a Michael addition reaction of the appropriate organocopper reagent followed in subsequent order by glycosidation of the resulting 3-alkyl-4,5-diacetoxypentanal with methanolic hydrogen chloride, protection with p-methoxybenzoyl chloride, and trimethylsilyl triflate catalyzed coupling with 2,4-di-O-(trimethylsilyl)uracil. The nucleosides were deprotected by treatment with 33% methylamine in absolute ethanol and separated by reversed-phase HPLC.