Temperature and frequency dependence of the spin-lattice relaxation times of E′1 centers in neutron-irradiated quartz glass

Results are reported for measurements of the spin-lattice relaxation times of E′₁ centers in quartz glass, produced by neutron irradiation, with the measurements made at two frequencies 9.25 and 24.0 GHz over a wide temperature interval 1.5–300 K. The experimental data are interpreted on the basis of interaction mechanisms of the spins with two-level systems with excitation energies ∼6, ∼26, and ∼420 cm⁻¹. A small modification of the existing theory allows us to explain a number of features of the observed temperature and frequency dependence of the relaxation rate. The results are compared with the data available in the literature on spin-lattice relaxation of irradiation centers in crystalline quartz and quartz glass. Fiz. Tverd. Tela (St. Petersburg) 39, 1335–1337 (August 1997)     

Excitation of bulk elastic waves at the surfaces of piezoelectric crystals with 422,622 symmetry

The problem of exciting bulk elastic waves at the surface of a piezoelectric with symmetries 422,622 has been solved by a successive approximation method. In the approximation of a fixed electric field, created at the surface of the piezoelectric crystal by a two-electrode transducer, the distributions are found for the shear wave stress and the energy flux density in the far zone. The equivalent circuit parameters for a two-electrode radiator are determined taking account of the dynamic piezoelectric correction obtained in the second approximation. The equivalent circuit parameters and the transducer loss are treated for TeO₂ crystals. A realistic possibility of using surface transducers in the development of acousto-optic modulators in the s.h.f. region is shown. Tomsk State Academy of Control Systems and Radio Electronics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 8–15, January, 1997.     

Thermodynamic stability of the structure of a deformed Fe-C solid solution

An analysis is made of the thermodynamic stability of the dislocation structure in polycrystalline samples of Fe-C, deformed under conditions of high rates and hydrostatic pressures, based on experimental and theoretical data concerning the internal energy and on diffractometer measurements of the broadening of x-ray lines. The method of deformation calorimetry was used to determine the internal energy in a wide range of deformations. A theoretical model is proposed for estimating the change in internal energy in deformed alloys. An investigation is made of the dependence of the interdislocation interaction parameter on the deformation rate for different stressed state-schemes and large plastic deformations. It is shown that the relative quantity δU/A is correlated in a wide range of deformations with the relative root-mean-square distortions of the crystal lattice of the deformed solid solution. The mechanisms for the accumulation of energy in deformed solid solutions having a body-centered cubic lattice are considered. Don State Technical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 77–83.     

一种多晶硅高温压力传感器

制作压力传感器时，在二氧化硅层上淀积多晶硅膜，既可利用优良的机械特性，又可保证压敏电阻与衬底间具有良好的绝缘性，由此可大大提高器件的温度特性。介绍了一种多晶硅压力传感器的原理和设计。实验结果表明，这类传感器具有灵敏度好，精度高等特点，电路工作范围为０－２５０℃，且具有良好的温度稳定性。     

Self and mutual admittance of slot antennas on a dielectric half-space

In this paper, an efficient implementation of the spectral domain moment technique is presented for computing the self and mutual coupling between slot antennas on a dielectric half-space. It is demonstrated that by the proper selection of the weighting functions in the method of moments, the analytic evaluation or simplification of the transverse moment integrals is enabled. This results into a significant reduction of the required computational labor. The method is then utilized in order to provide design data for the self and mutual admittances between two slot antennas on a dielectric substrate lens in the case of fused quartz (∈ _r =3.80), crystal quartz (∈ _r =4.53), silicon (∈ _r =11.9) and GaAs (∈ _r =12.8). The presented technique and associated results are useful when designing twin slot quasi-optical receivers, imaging arrays, phased arrays or power-combining arrays of slot elements at millimeter-wave frequencies.     

Investigation of the conditions for feeding filamentary silicon crystals,growing in a reactor with hot walls

An estimate of the factors which influence the rate of growth of filamentary silicon crystals in a standard chloride system using a quartz reactor with hot walls is given. It is shown that a diffusion form of crystallization is observed under the conditions investigated.Voronezh State Technical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 22–26, October, 1995.     

Integration of the equations of planar and flexural vibrations of anisotropic plates in special functions of generalized complex variables

On the basis of the method of successive approximations in formal series we construct systems of particular solutions of the equations of planar and flexural harmonic vibrations of thin rectilinear anisotropic plates with a plane of symmetry of elastic properties parallel to the faces. The solutions constructed are classified as special sk-functions of generalized complex variables. Translated fromTeoreticheskaya i Prikladnaya Mekhanika No. 24, 1993, pp. 54–61.     

Correlation of the leakage current and charge pumping in silicon oninsulator gate-controlled diodes

The leakage and charge pumping currents were measured in gate-controlled MOS p-i-n diodes fabricated on thin SIMOX substrates. The efficiencies of the techniques as well as their complementary features are analyzed for various experimental conditions. The interface properties of device-grade SIMOX wafers are characterized and shown to be compatible with VLSI requirements. Special interface coupling effects, which occur only in fully depleted SOI devices and modify the conventional signature of charge pumping and leakage current, are thoroughly investigated     

Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode

A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimising its structure with a 0.8 mu m thick p-cladding layer, a 1200 mu m long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 degrees C was confirmed for more than 1200 h. Optical feedback noise was below 3*10/sup -14/ Hz/sup -1/.<>