Equivalent electrical network of the DNA molecule

The variation of current density with bias or temperature is examined for DNA molecules of different configuration. To this end, the DNA molecule is represented as an equivalent electrical network whose behavior is then simulated with PSPICE. The results are found to be in close agreement with ones obtained within a physical model. It is established that the electrical response of a DNA molecule to an applied electric field depends on the boundary conditions and the potential profile along the molecule. This finding should contribute to the creation of a complete library of DNA-molecule configurations with prescribed electrical properties.     

Radiative lifetimes of electrons and holes in a thin semiconductor layer

Radiative lifetimes of nondegenerate electrons and holes distributed uniformly in a semiconductor layer either deposited on a substrate or bounded by two dielectric media are calculated. The obtained expression takes into account the radiation reabsorbtion and interference effects and determines the dependences of the radiative lifetimes on the refractive indices of the external media and on the layer thickness.     

Self-oscillating dimmable electronic ballast

This paper presents a simple alternative for an electronic ballast operating in self-sustained oscillating mode with dimming capability for fluorescent lamps. A simple modification in one of the gate drivers side circuit allows the lamp to dim without compromising the simplicity, reliability, and low cost which characterize the self-oscillating electronic ballast (SOEB). A qualitative analysis is presented to explain the behavior of the proposed self-oscillating electronic ballast with dimming feature. In addition, the stability and the key equations for the design are derived using the extended Nyquist criterion and describing function method. Experimental results from two 40-W electronic ballasts are presented to demonstrate the performance and to validate the analysis carried out.     

Alternating-direction implicit (ADI) formulation of the finite-difference time-domain (FDTD) method: algorithm and material dispersion implementation

The alternating-direction implicit finite-difference time-domain (ADI-FDTD) technique is an unconditionally stable time-domain numerical scheme, allowing the /spl Delta/t time step to be increased beyond the Courant-Friedrichs-Lewy limit. Execution time of a simulation is inversely proportional to /spl Delta/t, and as such, increasing /spl Delta/t results in a decrease of execution time. The ADI-FDTD technique greatly increases the utility of the FDTD technique for electromagnetic compatibility problems. Once the basics of the ADI-FDTD technique are presented and the differences of the relative accuracy of ADI-FDTD and standard FDTD are discussed, the problems that benefit greatly from ADI-FDTD are described. A discussion is given on the true time savings of applying the ADI-FDTD technique. The feasibility of using higher order spatial and temporal techniques with ADI-FDTD is presented. The incorporation of frequency dependent material properties (material dispersion) into ADI-FDTD is also presented. The material dispersion scheme is implemented into a one-dimensional and three-dimensional problem space. The scheme is shown to be both accurate and unconditionally stable.     

Three takes on telecom's troubles

Spectrum asked three IEEE members from the telecommunications sector to comment on the industry's current woes and prospects. Roch Guerin discusses bandwidth as a commodity and how to deal with it. The impact of technological change on telecommunications is enormous and calls for a shift in business models. Technology is making bandwidth a commodity and it should not matter who supplies it. Competition is vital and commodity providers must be decoupled from value providers. Frank Ferrante points out that the Year 2000 crisis resulted in manufacturers being deluged with orders for new upgraded systems. Vast sums were spent to meet the demand in time. However, when Y2K was over, production stayed high and inventories continued to build, while demand effectively stopped overnight. Dazzling new innovations are needed to compel the masses to spend and manufacturers must apply their resources to deliver quickly and efficiently. Jules A. Bellisio discusses the role of engineers in bringing new ideas to the market place. Many engineers have put together ventures for the sole purpose of attracting capital. The underlying technology and business propositions were there solely to lure the unsuspecting. By allowing engineers to use technology simply to cover for a scam, then the profession is also to blame for the current problems.     

NANODEV: A Nanoelectronic-Device Simulation Software System

The concept and structure of the NANODEV simulation software are described. NANODEV deals with nanoelectronic devices that exploit single-electron tunneling, resonant tunneling, or quantum interference. It can use both simplified and sophisticated models and enables one to evaluate a wide variety of devices and configurations. The capabilities of NANODEV are illustrated by examples.     

Robust dual-quantisation multibit sigma-delta modulator

A new dual-quantisation sigma-delta modulator is proposed, which introduces an additional feedback path in the input of the second integrator. In this way, unlike other dual-quantisation architectures, larger signal-to-noise ratios can be obtained by means of aggressive noise-shaping, like in a conventional multibit modulator. The proposed modulator is also shown to be more robust against non-idealities than other dual-quantisation architectures.     

Low supply voltage high-performance CMOS current mirror with low input and output voltage requirements

This paper presents a scheme for the efficient implementation of a low supply voltage continuous-time high-performance CMOS current mirror with low input and output voltage requirements. This circuit combines a shunt input feedback and a regulated cascode output stage to achieve low input resistance and very high output resistance. It can be used as a high-precision current mirror in analog and mixed signal circuits with a power supply close to a transistor's threshold voltage. The proposed current mirror has been simulated and a bandwidth of 40 MHz has been obtained. An experimental chip prototype has been sent for fabrication and has been experimentally verified, obtaining 0.15-V input-output voltage requirements, 100-/spl Omega/ input resistance, and more than 200-M/spl Omega/ (G/spl Omega/ ideally) output resistance with a 1.2-V supply in a standard CMOS technology.     

Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes

The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes.