Generalized ACE Constrained Progressive Edge-Growth LDPC Code Design

In this letter, we propose a generalization of the progressive edge-growth (PEG) algorithm with the aim of designing LDPC code graphs with substantially improved approximated cycle extrinsic message degree (ACE) properties. The proposed realization of generalized PEG algorithm outperforms original PEG algorithm and its subsequent modification proposed by Xiao and Banihashemi.     

Efficient digitization of compound analog signals

The problems related to digitization of sonar compound analog sounding signals reflected from a target are considered. With the use of mathematical simulation, it is shown that, in the case of the most efficient Kotel’nikov digitization, errors occur that impede correct correlation signal processing. This difficulty can be overcome via a reduction of the sampling interval by a factor of 2 to 4 relative to the interval proposed by Kotel’nikov.     

Bistable amphoteric centers in semiconductors

It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U ^? centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach.     

Enhancing Chaotic Communication Performances by Manchester Coding

A numerical analysis of an optical chaotic transmission system, based on the synchronization of two chaotic lasers, in a master-slave closed loop configuration is presented. At the transmitter, the master chaotic wave is superposed on the information message; at the receiver, the message is recovered by subtracting the synchronized slave chaotic wave from the received signal. The performances are analyzed in terms of the Q-factor, considering two different message modulation formats: the nonreturn-to-zero and the Manchester coding. The Manchester coding shows enhanced performances due to the shift of the signal spectrum to higher frequencies.     

A Novel Ordered Nanopore Array Diode Laser

In this work, we have created a new type of structure, the nanopore active layer, for achieving quantization of carrier states in a semiconductor. The nanopore structure consists of a periodic two-dimensional array of localized energy barriers perturbing an otherwise conventional quantum well. This perturbation leads to the formation of intraband forbidden energy gaps which are observed experimentally.     

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.     

Universal Models For Real Submanifolds

In previous papers by the present author, a machinery for calculating automorphisms, constructing invariants, and classifying real submanifolds of a complex manifold was developed. The main step in this machinery is the construction of a “nice” model surface. The nice model surface can be treated as an analog of the osculating paraboloid in classical differential geometry. Model surfaces suggested earlier possess a complete list of the desired properties only if some upper estimate for the codimension of the submanifold is satisfied. If this estimate fails, then the surfaces lose the universality property (that is, the ability to touch any germ in an appropriate way), which restricts their applicability. In the present paper, we get rid of this restriction: for an arbitrary type (n,K) (where n is the dimension of the complex tangent plane, and K is the real codimension), we construct a nice model surface. In particular, we solve the problem of constructing a nondegenerate germ of a real analytic submanifold of a complex manifold of arbitrary given type (n,K) with the richest possible group of holomorphic automorphisms in the given class.     

Measurement of target coordinates in three-dimensional bistatic forward-scattering radar

The maximum-likelihood technique is applied to determine the coordinates of moving targets in a three-dimensional bistatic forward-scattering radar. The potential accuracy of the coordinates’ determination is estimated. Simulation results are presented.     

An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures

Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser’s active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of ～0.65 μm. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of ～8.5% are attained for the electron-beam energy of 23 keV.