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91.
This paper describes a fully integrated digital-spread spectrum transceiver chip fabricated through MOSIS in 1.2 μm CMOS. It includes a baseband spread spectrum transmitter and a coherent intermediate frequency (IF) receiver consisting of a Costas loop, an acquisition loop for the pseudo-noise (PN) sequence, and a clock recovery loop with a 406.4 MHz onchip numerically controlled oscillator (NCO). The transceiver is capable of operating at a maximum IF sampling rate of 50.8 MS/s and a maximum chip rate of 12.7 R Mchips/s (Mcps) with selectable data rates of 100, 200, 400, and 800 kbps. At the maximum operating speed of 50.8 R MS/s, it dissipates 1.1 W. In an additive white Gaussian noise channel the IF receiver achieves a receiver output SNR within 1 dB of theory and can acquire code with a wide range of input SNR from -17 dB to over 30 dB. The transceiver chip has been interfaced to an RF up/down converter to demonstrate a wireless voice/data/video link operating in the 902-928 MHz band  相似文献   
92.
Zhang  X. Iwakura  H. 《Electronics letters》1994,30(13):1039-1040
A novel method is presented for designing FIR linear phase filters with discrete coefficients using Hopfield neural networks. The proposed procedure is based on the minimisation of the energy function of the Hopfield neural network, and can produce a good solution to the design of FIR linear phase filters with discrete coefficients  相似文献   
93.
Dynamic Programming (DP) applies to many signal and image processing applications including boundary following, the Viterbi algorithm, dynamic time warping, etc. This paper presents an array processor implementation of generic dynamic programming. Our architecture is a SIMD array attached to a host computer. The processing element of the architecture is based on an ASIC design opting for maximum speed-up. By adopting a torus interconnection network, a dual buffer structure, and a multilevel pipeline, the performance of the DP chip is expected to reach the order of several GOPS. The paper discusses both the dedicated hardware design and the data flow control of the DP chip and the total array.This work was supported in part by the NATO, Scientific and Environmental Affairs Division, Collaborative Research Grant SA.5-2-05(CRG.960201)424/96/JARC-501.  相似文献   
94.
We study a generalization of the notion of the chromatic number of a graph in which the colors assigned to adjacent vertices are required to be, in a certain sense, far apart. © 1993 John Wiley & Sons, Inc.  相似文献   
95.
The authors describe a scalable neural system, HyperNet, based on a probabilistic RAM-based architecture and using a custom VLSI IC. A system using five HyperNet VLSI ICs and capable of realising up to 10240 neurons has been designed, manufactured and demonstrated to have the potential to learn more than three orders of magnitude faster than simulations on current workstations  相似文献   
96.
The interaction between trivalent lanthanide ions and poly(1,4,7,10,13‐pentaoxacyclopentadecan‐2‐yl‐methyl methacrylate), PCR5, in aqueous solution and in the solid state have been studied. In aqueous solution, evidence of a weak interaction between the lanthanides and PCR5 comes from the small red shift of the Ce(III) emission spectra and the slight broadening of the Gd(III) EPR spectra. From the Tb(III) lifetimes in the presence of H2O and D2O the loss of one or two water coordinated molecules is confirmed when Tb(III) is bound to PCR5. An association constant of the order of 200 M?1 was obtained for a 1:1 (lanthanide:15‐crown‐5) complex from the shift of the polymer NMR signals induced by Tb(III). A similar association constant is obtained from the differences of the molar conductivity of Ce(III) solution at various concentrations in presence and absence of PCR5. When Tb(III) is adsorbed on PCR5 membranes, lifetime experiments in H2O and D2O confirm the loss of 5 or 6 water coordinated molecules indicating that in solid state the lanthanide(III)‐PCR5 interaction is stronger than in solution. The adsorption of Ce(III) in PCR5 membranes shows a Langmuir type isotherm, from which an equilibrium constant of 39 M?1 has been calculated. SEM shows that the membrane morphology is not much affected by lanthanide adsorption. Support for lanthanide ion–crown interactions comes from ab initio calculations on 15‐crown‐5/La(III) complex. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 1788–1799, 2007  相似文献   
97.
Five-terminal silicon-on-insulator (SOI) MOSFETs have been characterized to determine the threshold voltage at the front, back, and sidewall as a function of the body bias. The threshold voltage shift with the body bias at the front and back interfaces can be explained by the standard bulk body effect equation. However, the threshold voltage shift at the sidewall is smaller than predicted by this equation and saturates at large body biases. This anomalous behavior is explained by two-dimensional charge sharing between the sidewall and the front and back interfaces. An analytical model that accounts for this charge sharing by a simple trapezoidal approximation of the depletion regions and correctly predicts the sidewall threshold voltage shift and its saturation is discussed. The model makes it possible to measure the sidewall threshold even when it is larger than the front threshold voltage  相似文献   
98.
Solutions are presented for the impulsively started uniformstream and simple shear flows past a point source of momentum,which can be interpreted to describe the position and the widthof the front which transmits the knowledge of the singularitythrough a slightly viscous fluid. These understandings are thengeneralized to show that the front always moves with velocityslower than that of a (strictly monotonic) convective velocity,and also that its width always grows faster than with simplediffusion. Finally, a remarkably simple, exact expression is given forvorticity due to a simple shear flow past a point vortex.  相似文献   
99.
The article referenced above was first published online on 30 August 2007 with incorrect pagination; the pagination has now been corrected online and in print. Copyright © 2007 John Wiley & Sons, Ltd.  相似文献   
100.
We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux.  相似文献   
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