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41.
Kameyama H. Miyajima T. Zhi Ding 《IEEE transactions on circuits and systems. I, Regular papers》2008,55(3):851-860
In multicarrier systems, when the order of a channel impulse response is larger than the length of the cyclic prefix (CP), there is a significant performance degradation due to interblock interference (IBI). This paper proposes a blind-channel shortening method in which the equalizer parameter vector is formed by the noise subspace of the received signal correlation matrix so that the output power is maximized. The proposed method can not only shorten the effective channel impulse response to within the CP length but also maximize the output signal-to-interference-and-noise ratio while eliminating the IBI. We point out that the performance depends on the choice of a decision delay and propose a simple method for determining the appropriate delay. We propose both a batch algorithm and an adaptive algorithm and show by simulation that they are superior to the conventional algorithms. 相似文献
42.
A one-dimensional bulk reaction model for the oxidation of nickeltitanium is formulated, with preferential oxidation of titaniumbeing included. The modelling is directed at the better understandingof the dominant mechanisms involved in the oxidation processand their significance for the biocompatibility of the alloy.Two different regimes for the relative diffusivities of oxygenand the metals are investigated. By assuming fast bulk reactions,different asymptotic structures emerge in different parameterregimes and the resulting models take the form of moving boundaryproblems. Different profiles of nickel concentration are obtained:in particular a nickel-rich layer (observed in practice) ispresent below the oxide/metal interface for the case when oxygenand the metals diffuse at comparable rates. 相似文献
43.
D. Amutha Rani Y. Yamamoto S. Mohri M. Sivakumar Y. Tsujita H. Yoshimizu 《Journal of Polymer Science.Polymer Physics》2003,41(3):269-273
In this study, a novel stepwise extraction method has been examined. The guest molecules housed between the helices of the clathrate δ form of syndiotactic polystyrene can be removed completely with this method. A systematic study of the preparation of a solvent‐free mesophase (emptied clathrate) membrane, its helical and residual solvent contents, and its structural transformations has been performed. In this first attempt, an enhancement in the TTGG helical content has been observed in the extracted membrane, and a conceptual mechanism is proposed. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 269–273, 2003 相似文献
44.
We present closed-form expressions for the average bit error probability (ABEP) of BPSK, QPSK and M-QAM of an amplify-and-forward average power scaling dual-hop relay transmission, over non-identical Nakagami-m fading channels, with integer values of m. Additionally, we evaluate in closed-form the ABEP under sufficiently large signal-to-noise ratio for the source-relay link, valid for arbitrary rn. Numerical and simulation results show the validity of the proposed mathematical analysis and point out the effect of the two hops unbalanced fading conditions on the error performance. 相似文献
45.
S. K. Chen A. Serquis G. Serrano K. A. Yates M. G. Blamire D. Guthrie J. Cooper H. Wang S. Margadonna J. L. MacManus‐Driscoll 《Advanced functional materials》2008,18(1):113-120
By applying a combination of characterisation tools, changes in structural and superconducting properties with nominal Mg non‐stoichiometry in MgxB2 are found. The non‐stoichiometry produces enhanced in‐field critical current densities (Jc's) and upper critical field / irreversibility field (Hc2/Hirr(T)) values. Upper critical fields of ~ 21 T (4.2 K) were obtained in nominal Mg‐deficient samples compared to ~ 17 T (4.2 K) for near‐stoichiometric samples. 相似文献
46.
H.J. Bolink E. Coronado D. Repetto M. Sessolo E.M. Barea J. Bisquert G. Garcia‐Belmonte J. Prochazka L. Kavan 《Advanced functional materials》2008,18(1):145-150
A new type of bottom‐emission electroluminescent device is described in which a metal oxide is used as the electron‐injecting contact. The preparation of such a device is simple. It consists of the deposition of a thin layer of a metal oxide on top of an indium tin oxide covered glass substrate, followed by the solution processing of the light‐emitting layer and subsequently the deposition of a high‐workfunction (air‐stable) metal anode. This architecture allows for a low‐cost electroluminescent device because no rigorous encapsulation is required. Electroluminescence with a high brightness reaching 5700 cd m–2 is observed at voltages as low as 8 V, demonstrating the potential of this new approach to organic light‐emitting diode (OLED) devices. Unfortunately the device efficiency is rather low because of the high current density flowing through the device. We show that the device only operates after the insertion of an additional hole‐injection layer in between the light‐emitting polymer (LEP) and the metal anode. A simple model that explains the experimental results and provides avenues for further optimization of these devices is described. It is based on the idea that the barrier for electron injection is lowered by the formation of a space–charge field over the metal‐oxide–LEP interface due to the build up of holes in the LEP layer close to this interface. 相似文献
47.
R. Hefelmann P. Mann A. Aignan F. Filsinger und H. Amsel 《Fresenius' Journal of Analytical Chemistry》1902,41(1):66-68
Ohne Zusammenfassung 相似文献
48.
Xin Sun Qiang Lu Moroz V. Takeuchi H. Gebara G. Wetzel J. Shuji Ikeda Changhwan Shin Tsu-Jae King Liu 《Electron Device Letters, IEEE》2008,29(5):491-493
A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control). 相似文献
49.
Rajoo R. Lim S.S. Wong E.H. Hnin W.Y. Seah S.K.W. Tay A.A.O. Iyer M. Tummala R.R. 《Advanced Packaging, IEEE Transactions on》2008,31(2):377-385
A wafer level packaging technique has been developed with an inherent advantage of good solder joint co-planarity suitable for wafer level testing. A suitable weak metallization scheme has also been established for the detachment process. During the fabrication process, the compliancy of the solder joint is enhanced through stretching to achieve a small shape factor. Thermal cycling reliability of these hourglass-shaped, stretch solder interconnections has been found to be considerably better than that of the conventional spherical-shaped solder bumps. 相似文献
50.
K. Morigaki K. Takeda H. Hikita C. Ogihara P. Roca i Cabarrocas 《Journal of Non》2008,354(19-25):2131-2134
Our model for light-induced defect creation in hydrogenated amorphous silicon is applied to its kinetics, i.e., the growing curve of light-induced dangling bond density as a function of illumination time, which is fitted to a stretched exponential function. Two parameters β and τ involved in the function are estimated as functions of saturated dangling bond density in terms of our model. These are compared with two experimental results, i.e., our results obtained from ESR measurements and Shimakawa et al.’s results obtained from photoconductivity measurements. The saturated dangling bond density is also measured as a function of the generation rate of free carriers. The experimental results are compared with calculated results and discussed. 相似文献